• Journal of information and communication convergence engineering
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• 제7권3호
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• pp.361-365
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• 2009

This paper has been presented the transport characteristics of FinFET using the analytical potential model based on the Poisson's equation in subthreshold and threshold region. The threshold voltage is the most important factor of device design since threshold voltage decides ON/OFF of transistor. We have investigated the variations of threshold voltage and drain induced barrier lowing according to the variation of geometry such as the length, width and thickness of channel. The analytical potential model derived from the three dimensional Poisson's equation has been used since the channel electrostatics under threshold and subthreshold region is governed by the Poisson's equation. The appropriate boundary conditions for source/drain and gates has been also used to solve analytically the three dimensional Poisson's equation. Since the model is validated by comparing with the three dimensional numerical simulation, the subthreshold current is derived from this potential model. The threshold voltage is obtained from calculating the front gate bias when the drain current is $10^{-6}A$.

• 한국농공학회논문집
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• 제62권4호
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• pp.45-51
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• 2020

The poisson's ratio was obtained from the effective vertical stress and horizontal stress of consolidation-undrained test. It was analyzed void ratio verse poisson's ratio. At the result, the effective friction angle was increase with relative density increased, was decreased the poisson's ratio. The empirical equation of void ratio and poisson's ratio was showed very high correlation r²=0.846. The empirical equation was showed that the smaller the void ratio in the fine grained soil than granular soil. In the case of 0.85 times the correlation analysis equation of granular and fine grained soil, the experimental results were shown very similarly. In especially, the poisson's ratio prediction results was shown within 5% of the error range, was revalidation 0.85 times the correlation analysis equation using the void ratio. In this study, correlation analysis equation of the granular and fine grained soil was more reliability of the poisson's ratio prediction results apply to the void ratio than dry unit weight.

• 충청수학회지
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• 제26권3호
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• pp.501-516
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• 2013

The well-known Vlasov-Poisson equation describes plasma physics as nonlinear first-order partial differential equations. Because of the nonlinear condition from the self consistency of the Vlasov-Poisson equation, many problems occur: the existence, the numerical solution, the convergence of the numerical solution, and so on. To solve the problems, a viscosity term (a second-order partial differential equation) is added. In a viscosity term, the Vlasov-Poisson equation changes into a parabolic equation like the Fokker-Planck equation. Therefore, the Schauder fixed point theorem and the classical results on parabolic equations can be used for analyzing the Vlasov-Poisson equation. The sequence and the convergence results are obtained from linearizing the Vlasove-Poisson equation by using a fixed point theorem and Gronwall's inequality. In numerical experiments, an implicit first-order scheme is used. The numerical results are tested using the changed viscosity terms.

• 전자공학회논문지D
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• 제34D권8호
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• pp.15-25
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• 1997

The integration method of carier concentrations to redcue the discretization error of th box integratio method used in the discretization of the three-dimensional poisson's equation is presented. The carrier concentration is approximated in the closed form as an exponential function of the linearly varying potential in the element. The presented method is implemented in the three-dimensional poisson's equation solver running under the windows 95. The accuracy and the convergence chaacteristics of the three-dimensional poisson's equation solver are compared with those of DAVINCI for the PN junction diode and the n-MOSFET under the thermal equilibrium and the DC reverse bias. The potential distributions of the simulatied devices from the three-dimensional poisson's equation solver, compared with those of DAVINCI, has a relative error within 2.8%. The average number of iterations needed to obtain the solution of the PN junction diode and the n-MOSFET using the presented method are 11.47 and 11.16 while the those of DAVINCI are 21.73 and 23.0 respectively.

• Journal of information and communication convergence engineering
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• 제7권1호
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• pp.57-61
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• 2009

This paper has presented the subthreshold current model of FinFET using the potential variation in the doped channel based on the analytical solution of three dimensional Poisson's equation. The model has been verified by the comparison with the data from 3D numerical device simulator. The variation of subthreshold current with front and back gate bias has been studied. The variation of subthreshold swing and threshold voltage with front and back gate bias has been investigated.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권4호
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• pp.451-456
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• 2014

A compact model of a depletion-mode silicon-nanowire (Si-NW) pH sensor is proposed. This drain current model is obtained from the Pao-Sah integral and the continuous charge-based model, which is derived by applying the parabolic potential approximation to the Poisson's equation in the cylindrical coordinate system. The threshold-voltage shift in the drain-current model is obtained by solving the nonlinear Poisson-Boltzmann equation for the electrolyte. The simulation results obtained from the proposed drain-current model for the Si-NW field-effect transistor (SiNWFET) agree well with those of the three-dimensional (3D) device simulation, and those from the Si-NW pH sensor model also agree with the experimental data.

• 한국전산유체공학회지
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• 제19권4호
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• pp.20-28
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• 2014

An efficient solution algorithm for simulating free surface problem is presented. Navier-Stokes equations for variable density incompressible flow are employed as the governing equation on Cartesian meshes. In order to describe the free surface motion efficiently, VOF(Volume Of Fluid) method utilizing THINC(Tangent of Hyperbola for Interface Capturing) scheme is employed. The most time-consuming part of the current free surface flow simulations is the solution step of the linear system, derived by the pressure Poisson equation. To solve a pressure Poisson equation efficiently, the PCG(Preconditioned Conjugate Gradient) method is utilized. This study showed that the proper application of the preconditioner is the key for the efficient solution of the free surface flow when its pressure Poisson equation is solved by the CG method. To demonstrate the efficiency of the current approach, we compared the convergence histories of different algorithms for solving the pressure Poisson equation.

• 한국정보통신학회논문지
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• 제15권7호
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• pp.1537-1542
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• 2011

본 연구에서는 이중게이트 MOSFET의 채널도핑이 비산형분포를 가질 때 게이트 산화막의 두께를 변화시키면서 문턱전압이하특성을 분석하였다. 이중게이트 MOSFET는 차세대 나노소자로서 단채널효과를 감소시킬 수 있다는 장점 때문에 많은 연구가 진행 중에 있다. 이에 이중게이트 MOSFET에서 단채널효과로서 잘 알여진 문턱전압 이하 스윙의 저하에 대하여 비선형도핑분포를 이용한 포아송방정식의 분석학적 모델로 분석하고자 한다. 또한 나노소자인 이중게이트 MOSFET의 구조적 파라미터 중 가장 중요한 게이트 산화막의 두께에 대하여 문턱전압이하 특성을 분석하였다. 본 논문에서 사용한 분석학적 포아송방정식의 포텐셜모델 및 전송모델의 타당성을 입증하기 위하여 수치해석학적 결과값과 비교하였으며 이 모델을 이용하여 이중게이트 MOSFET의 문턱전압이하 스윙을 분석하였다.

• 한국정보통신학회논문지
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• 제13권11호
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• pp.2373-2377
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• 2009

본 연구에서는 3차원 포아송방정식을 이용하여 FinFET의 문턱전압특성을 분석하였다. FinFET는 차세대 나노소자로서 단채널효과를 감소시킬 수 있다는 장점 때문에 많은 연구가 진행중에 있다. 이에 FinFET에서 단채널효과로서 잘 알려진 문턱 전압이하 스윙 및 문턱 전압 등을 3차원 포아송방정식의 분석학적 모델로 분석하고자 한다. 나노소자인 FinFET의 구조적 특성을 고찰하기 위하여 채널의 두께, 길이, 폭 등의 크기요소에 따라 분석하였다. 본 논문에서 사용한 분석학적 3차원 포아송방정식의 포텐셜모델 및 전송모델은 여러 논문에서 3차원 수치해석학적 값과 비교하여 그 타당성이 입증되었으므로 이 모델을 이용하여 FinFET의 문턱전압특성 및 문턱전압이하 특성을 분석하였다.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2009년도 추계학술대회
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• pp.928-930
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• 2009

본 연구에서는 3차원 포아송방정식을 이용하여 FinFET의 문턱전압특성을 분석하였다. FinFET는 차세대 나노소자로서 단채널효과를 감소시킬 수 있다는 장점 때문에 많은 연구가 진행중에 있다. 이에 FinFET에서 단채널효과로서 잘 알여진 문턱전압이하 스윙 및 문턱전압 등을 3차원 포아송방정식의 분석학적 모델로 분석하고자 한다. 나노소자인 FinFET의 구조적 특성을 고찰하기 위하여 채널의 두께, 길이, 폭 등의 크기요소에 따라 분석하였다. 본 논문에서 사용한 분석학적 3차원 포아송방정식의 포텐셜모델 및 전송모델은 여러 논문에서 3차원 수치해석학적 값과 비교하여 그 타당성이 입증되었으므로 이 모델을 이용하여 FinFET의 문턱전압 특성 및 문턱전압이하 특성을 분석하였다.