A discretization method of the three-dimensional poisson's equation with excellent convergence characteristics

우수한 수렴특성을 갖는 3차원 포아송 방정식의 이산화 방법

  • 김태한 (인하대학교 전자공학과 반도체연구실) ;
  • 이은구 (인하대학교 전자공학과 반도체연구실) ;
  • 김철성 (인하대학교 전자공학과 반도체연구실)
  • Published : 1997.08.01

Abstract

The integration method of carier concentrations to redcue the discretization error of th box integratio method used in the discretization of the three-dimensional poisson's equation is presented. The carrier concentration is approximated in the closed form as an exponential function of the linearly varying potential in the element. The presented method is implemented in the three-dimensional poisson's equation solver running under the windows 95. The accuracy and the convergence chaacteristics of the three-dimensional poisson's equation solver are compared with those of DAVINCI for the PN junction diode and the n-MOSFET under the thermal equilibrium and the DC reverse bias. The potential distributions of the simulatied devices from the three-dimensional poisson's equation solver, compared with those of DAVINCI, has a relative error within 2.8%. The average number of iterations needed to obtain the solution of the PN junction diode and the n-MOSFET using the presented method are 11.47 and 11.16 while the those of DAVINCI are 21.73 and 23.0 respectively.

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