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Subthreshold Current Model of FinFET Using Three Dimensional Poisson's Equation  

Jung, Hak-Kee (Department of Electronic Eng., Kunsan National University)
Publication Information
Journal of information and communication convergence engineering / v.7, no.1, 2009 , pp. 57-61 More about this Journal
Abstract
This paper has presented the subthreshold current model of FinFET using the potential variation in the doped channel based on the analytical solution of three dimensional Poisson's equation. The model has been verified by the comparison with the data from 3D numerical device simulator. The variation of subthreshold current with front and back gate bias has been studied. The variation of subthreshold swing and threshold voltage with front and back gate bias has been investigated.
Keywords
FinFET(fin field effect transistor); subthreshold current; 3D Poisson's equation; subthreshold swing; threshold voltage;
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