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http://dx.doi.org/10.6109/jkiice.2011.15.7.1537

Analysis of Subthreshold Characteristics for DGMOSFET according to Oxide Thickness Using Nonuniform Doping Distribution  

Jung, Hak-Kee (군산대학교)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.15, no.7, 2011 , pp. 1537-1542 More about this Journal
Abstract
In this paper, the subthreshold characteristics have been analyzed for various oxide thickness of double gate MOSFET(DGMOSFET) using Poisson's equation with nonuniform doping distribution. The DGMOSFET is extensively been studying since it can shrink the short channel effects(SCEs) in nano device. The degradation of subthreshold swing(SS) known as SCEs has been presented using analytical for, of Poisson's equation with nonuniform doping distribution for DGMOSFET. The SS have been analyzed for, change of gate oxide thickness to be the most important structural parameters of DGMOSFET. To verify this potential and transport models of thus analytical Poisson's equation, the results have been compared with those of the numerical Poisson's equation, and subthreshold swing has been analyzed using this models for DGMOSFET.
Keywords
DGMOSFET; Poisson's equation; nonuniform doping distribution; Short Channel Effect(SCE); Subthreshold;
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