JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Compact Model of a pH Sensor with Depletion-Mode Silicon-Nanowire Field-Effect Transistor

  • Yu, Yun Seop (Department of Electrical, Electronic and Control Engineering and IITC, Hankyong National University)
  • Received : 2014.03.04
  • Accepted : 2014.06.26
  • Published : 2014.08.30
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Abstract

A compact model of a depletion-mode silicon-nanowire (Si-NW) pH sensor is proposed. This drain current model is obtained from the Pao-Sah integral and the continuous charge-based model, which is derived by applying the parabolic potential approximation to the Poisson's equation in the cylindrical coordinate system. The threshold-voltage shift in the drain-current model is obtained by solving the nonlinear Poisson-Boltzmann equation for the electrolyte. The simulation results obtained from the proposed drain-current model for the Si-NW field-effect transistor (SiNWFET) agree well with those of the three-dimensional (3D) device simulation, and those from the Si-NW pH sensor model also agree with the experimental data.

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References

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