• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.4 s.346
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• pp.16-22
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• 2006

Gigabit transimpedance amplifiers are realihzed in submicron CMOS technologies for Gigabit Ethernet applications. The regulated cascode technique is exploited to enhance the bandwidth and noise performance simultaneously so that it can isolate the large input parasitic capacitance including photodiode capacitance from the determination of the bandwidth. The 1.25Gb/s TIA implemented in a 0.6um CMOS technology shows the measured results of 58dBohm transimpedance gain, 950MHz bandwidth for a 0.5pF photodiode capacitance, 6.3pA/sqrt(Hz) average noise current spectral density, and 85mW power dissipation from a single 5V supply. In addition, a 10Gb/s TIA is realized in a 0.18um CMOS incorporating the RGC input and the inductive peaking techniques. It provides 59.4dBohm transimpedance gain, 8GHz bandwidth for a 0.25pF photodiode capacitance, 20pA/sqrt(Hz) noise current spectral density, and 14mW power consumption for a single 1.8V supply.

• Journal of Advanced Marine Engineering and Technology
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• v.39 no.1
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• pp.63-67
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• 2015

White light-emitting diode (WLED) is growing interest in using both illumination and communications. This paper reports visible light communication (VLC) composed of a super bright white light-emitting diode, low cost commercial photo-diode and a Fresnel lens. LED driver is consisted of the power MOSFET and MOSFET driver that switches the LED on and off. The modulation bandwidth of the LED used was determined to be 8 MHz. However, it was possible to communicate up to 1 Mbps under illumination of 500 lx because of the weak signal power and a low spectral sensitivity of the SHF213 as a PIN photodiode. In order to enhance the system bandwidth, the LED light was focused on the PIN photodiode by use of the Fresnel lens. As a result of that, visible light link was operated up to modulation bandwidth of the LED. The signal to noise ratio can be improved by 40 dB using an optical concentration at the receiver.

• Food Science of Animal Resources
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• v.31 no.2
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• pp.191-199
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• 2011

The objective of this study was to develop a method to simultaneously quantify vitamins A and E in infant formula. To determine the vitamin A and E content, vitamin A and four different vitamin E isomers (${\alpha}$-, ${\beta}$-, ${\gamma}$-, and ${\delta}$-tocopherol) were separated by high performance liquid chromatography with a photodiode array detector using a Develosil RPAQUEOUS RP-$C_{30}$ column ($4.6{\times}250$ mm, 5 ${\mu}M$). The vitamin A and E contents in the certified reference material determined using this method were within the certified range of standard values. The limits of detection (LODs) and limits of quantitation (LOQs) for vitamin A were 0.02 and 0.06 ${\mu}g/L$, respectively. LODs and LOQs for the vitamin E isomers ranged from 0.20 to 0.55 and from 0.67 to 1.81 ${\mu}g/L$, respectively. Linear analyses indicated that the square of the correlation coefficient for the vitamin A and E isomers was 0.9997-0.9999. The recovery of vitamins ranged from 96.69 to 97.79%. The results demonstrate that this novel method could be used to reliably analyze vitamin A and E content in infant formula.

• Journal of the Semiconductor & Display Technology
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• v.12 no.2
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• pp.13-17
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• 2013

In lighting system where several large-area organic light-emitting diode (OLED) lighting panels are involved, panel aging may appear differently from each other, resulting in a falling-off in lighting quality. To achieve uniform light output across large-area OLED lighting panels, we have employed an optical feedback circuit. Light output from each OLED panel is monitored by the optical feedback circuit that consists of a photodiode, I-V converter, 10-bit analogdigital converter (ADC), and comparator. A photodiode generates current by detecting OLED light from one side of the glass substrate (i.e., edge emission). Namely, the target luminance from the emission area (bottom emission) of OLED panels is monitored by current generated from the photodiode mounted on a glass edge. To this end, we need to establish a mapping table between the ADC value and the luminance of bottom emission. The reference ADC value corresponds to the target luminance of OLED panels. If the ADC value is lower or higher than the reference one (i.e., when the luminance of OLED panel is lower or higher than its target luminance), a micro controller unit (MCU) adjusts the pulse width modulation (PWM) used for the control of the power supplied to OLED panels in such a way that the ADC value obtained from optical feedback is the same as the reference one. As such, the target luminance of each individual OLED panel is unchanged. With the optical feedback circuit included in the lighting system, we have observed only 2% difference in relative intensity of neighboring OLED panels.

• Journal of the Korea Institute of Military Science and Technology
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• v.15 no.2
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• pp.201-207
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• 2012

Pulsed lasers at the 613 nm and 1064 nm wavelengths on nanoseconds have been utilized to characterize the damage on Si photodiode exposed to intense illumination. Morphological damages and structural changes at sites on the photodiode irradiated during microseconds of laser pulses were analyzed by FE-SEM images and XRD patterns, respectively. The removal of oxide coating, ripple, melting marks, ridges, and crater on photodiodes were definitely observed in order of increasing the pulse intensities generated above the damage threshold. Then, the degradation in photosensitivity of the Si photodiode irradiated by high power density pulses was measured as a function of laser irradiation time at the various wavelengths. The free charge carrier and thermal diffusion mechanisms could have been invoked to characterize the damage. The relative photosensitivity data calculated using the thermal diffusion model proposed in this paper have been compared with the experimental data irradiated above the damage threshold.

• Journal of Radiation Industry
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• v.5 no.2
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• pp.185-189
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• 2011

As nuclear industry has been developed, a various types of radiological contamination has occurred. After 9.11 terror in U.S.A., it has been concerned that terrorists' active area has been enlarged to use nuclear or radioactive substance. Recently, the most powerful earth-quake stroke, which triggered a massive tsunami in Japan and then Fukushima nuclear power plant reactor has suffered from a serious accident in history. The Fukushima reactor accident has occurred an anxiety of radiation leaks and about 170,000 people have been evacuated from the accidental area near the nuclear power plant. For these reasons, a social chaos can be occurred if radiological contamination occurs to the supply system for the drinking water. As such, the establishment of the radiation monitoring system for the city main water system is compelling for the national security. In this study, a feasibility test of radiation monitoring system which consists of unified hybrid-type radiation detectors was experimented for multi detection system by using gamma-ray imaging. The hybrid-type radiation sensors were fabricated with CsI(Tl) scintillators and photodiodes. A preamplifier and amplifier was also fabricated and assembled with the sensor in the shielding case. For the preliminary test of detection of radiological contamination in the river, multi CsI(Tl)-PIN photodiode radiation detectors and $^{137}Cs$ gamma-ray source were used. The DAQ was done by Linux based ROOT program and NI DAQ system with Labview program. The simulated contamination was assumed to be occurred at Gapcheon river in Daejeon city. Multi CsI(Tl)-PIN photodiode radiation detectors were positioned at the Gapcheon river side. Assuming that the radiological contaminations flows in the river the $^{137}Cs$ gamma-ray source has been moved and then, the contamination region was reconstructed.

• Analytical Science and Technology
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• v.20 no.4
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• pp.289-295
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• 2007

A simple electric circuit of an infrared photodiode electrode (IPDE) was utilized to monitor iron using square-wave (SW) anodic stripping voltammetry (SV) and cyclic voltammetry (CV). The optimum analytical conditions were determined and were compared with those of common working electrodes. The comparison showed that CV is more sensitive and convenient to use than the common voltammetry methods. At the optimized conditions, the working ranges of 0.1- to 0.8- and 0.85- to 6.0 mg/L iron was obtained. Relative standard deviation of 15 measurements of iron (0.4 mg/L) was 0.09%. The analytical detection limit was found to be $80{\pm}0.6ug/L$, which was applied to iron in waste water.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.8
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• pp.52-59
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• 2007

In this paper, we analyzed and measured implant isolation characteristics for a 1.25 Gbps monolithic integrated hi-directional (M-BiDi) optoelectronic system-on-a-chip, which is a key component to constitute gigabit passive optical networks (PONs) for a fiber-to-the-home (FTTH). Also, we derived an equivalent circuit of the implant structure under various DC bias conditions. The 1.25 Gbps M-BiDi transmit-receive SoC consists of a laser diode with a monitor photodiode as a transmitter and a digital photodiode as a digital data receiver on the same InP wafer According to IEEE 802.3ah and ITU-T G.983.3 standards, a receiver sensitivity of the digital receiver has to satisfy under -24 dBm @ BER=10-12. Therefore, the electrical crosstalk levels have to maintain less than -86 dB from DC to 3 GHz. From analysed and measured results of the implant structure, the M-BiDi SoC with the implant area of 20 mm width and more than 200 mm distance between the laser diode and monitor photodiode, and between the monitor photodiode and digital photodiode, satisfies the electrical crosstalk level. These implant characteristics can be used for the design and fabrication of an optoelectronic SoC design, and expended to a mixed-mode SoC field.

• Korean Journal of Optics and Photonics
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• v.24 no.1
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• pp.1-8
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• 2013

In this paper, we report design, fabrication and characterization of the WBRM (Wide Band Receiver Module) for LADAR (LAser Detection And Ranging) application. The WBRM has been designed and fabricated using self-made APD (Avalanche Photodiode) and TIA (Trans-impedance Amplifier). The APD and TIA chips have been integrated on 12-pin TO8 header using self-made ceramic submount and circuit. The WBRM module showed 450 ps of rise time, and corresponding 780 MHz bandwidth. Furthermore, it showed very low output noise less than 0.8 mV, and higher SNR than 15 for 150 nW of MDS(Minimum Detectable Signal). To the author's knowledge, this is the best performance of an optical receiver module for LIDAR fabricated by 200 um InGaAs APD.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.7
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• pp.1448-1452
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• 2004

In this paper, a photodiode capable of obtaining a sufficient photo/ dark current ratio at both a forward bias state and a reverse bias state is proposed. The photodiode includes a glass substrate, an Cr thin film formed as a lower electrode over the glass substrate, Cr silicide thin film(∼l00$\AA$) ) formed as a schottky barrier over the Cr thin film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the Cr silicide thin film. Transparent conduction film ITO (thickness 100nm) formed as an upper electrode over the hydro-generated amorphous silicon film is then deposited in pure argon at room temperature for the Schottky contact and light window. The high quality Cr silicide thin film using annealing of Cr and a-Si:H is formed and analyzed by experiment. We have obtained the film with a superior characteristics. The dark current of the ITO/a-Si:H Schottky at a reverse bias of -5V is ∼3$\times$IO-12 A/un2, and one of the lowest reported, hitherto. AES(Auger Electron Spectroscophy) measurements indicate that this notable improvement in device characteristics stems from reduced diffusion of oxygen, rather than indium, from the ITO into the a-Si:H layer, thus, preserving the integrity of the Schottky interface. The spectral response of the photodiode for wavelengths in the range from 400nm to 800nm shows the expected behavior whereby the photocurrent is governed by the absorption characteristics of a-Si:H.