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http://dx.doi.org/10.9766/KIMST.2012.15.2.201

Characteristics of Damage on Photosensor Irradiated by Intense Illumination : Thermal Diffusion Model  

Kwon, Chan-Ho (Department of Chemistry, Kangwon National University)
Shin, Myeong-Suk (Department of Chemistry, Kangwon National University)
Hwang, Hyon-Seok (Department of Chemistry, Kangwon National University)
Kim, Hong-Lae (Department of Chemistry, Kangwon National University)
Kim, Seong-Shik (ADD)
Park, Min-Kyu (ADD)
Publication Information
Journal of the Korea Institute of Military Science and Technology / v.15, no.2, 2012 , pp. 201-207 More about this Journal
Abstract
Pulsed lasers at the 613 nm and 1064 nm wavelengths on nanoseconds have been utilized to characterize the damage on Si photodiode exposed to intense illumination. Morphological damages and structural changes at sites on the photodiode irradiated during microseconds of laser pulses were analyzed by FE-SEM images and XRD patterns, respectively. The removal of oxide coating, ripple, melting marks, ridges, and crater on photodiodes were definitely observed in order of increasing the pulse intensities generated above the damage threshold. Then, the degradation in photosensitivity of the Si photodiode irradiated by high power density pulses was measured as a function of laser irradiation time at the various wavelengths. The free charge carrier and thermal diffusion mechanisms could have been invoked to characterize the damage. The relative photosensitivity data calculated using the thermal diffusion model proposed in this paper have been compared with the experimental data irradiated above the damage threshold.
Keywords
Shock Wave; Intense Illumination; Energy Density Threshold; Thermal Diffusion; Photosensor; Free Charge Carrier; Photosensitivity; Optical Absorption Coefficient;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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