• 제목/요약/키워드: Photo Detector

검색결과 196건 처리시간 0.032초

Pt 전극을 이용한 ${Al_0.33}{Ga_0.67}N$ 쇼트키형 자외선 수광소자의 동작특성 (Properties of Pt/${Al_0.33}{Ga_0.67}N$ Schottky Type UV Photo-detector)

  • 신상훈;정영로;이재훈;이용현;이명복;이정희;이인환;한윤봉;함성호
    • 대한전자공학회논문지SD
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    • 제40권7호
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    • pp.486-493
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    • 2003
  • 유기금속 화학기상 증착법(MOCVD)을 이용하여 사파이어 기판에 AlGaN/n/sup +/-GaN 구조와 AlGaN/AlGaN interlayer/n/sup +/-GaN 구조로 성장시킨 AlGaN 층을 이용하여 쇼트키형 자외선 수광소자를 제작하였다. 성장층은 약 1018의 캐리어 농도와 각각 236과 269 ㎠/V·s의 이동도를 가진다. 메사구조를 형성하기 위해 ICP 장비로 식각한 후, Si₃N₄로 절연한 뒤 Ti/Al/Ni/Au와 Pt를 이용하여 저항성 전극 및 쇼트키전극을 형성하였다. 그리고 interlayer를 갖는 Pt/Al/sub 0.33/Ga/sub 0.67/N의 전기적 특성은 -5 V에서 1 ㎁의 낮은 누설전류를 보였고, interlayer가 없는 Pt/Al/sub 0.33/Ga/sub 0.67/N은 0.1㎂로 나타났다. 광측정 결과, interlayer를 갖는 Pt/Al/sub 0.33/Ga/sub 0.63/N 쇼트키 수광소자는 차단파장이 약 300 ㎚이며, 광응답도는 280 ㎚에서 0.15 A/W, 그리고 자외선 대 가시광선 제거비는 1.5×10⁴로 우수한 반응특성을 보였다.

센서-회로 분리형 엑스선 DR 검출기를 위한 대면적 CMOS 영상센서 모사 연구 (Simulation Study of a Large Area CMOS Image Sensor for X-ray DR Detector with Separate ROICs)

  • 김명수;김형택;강동욱;유현준;조민식;이대희;배준형;김종열;김현덕;조규성
    • 방사선산업학회지
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    • 제6권1호
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    • pp.31-40
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    • 2012
  • There are two methods to fabricate the readout electronic to a large-area CMOS image sensor (LACIS). One is to design and manufacture the sensor part and signal processing electronics in a single chip and the other is to integrate both parts with bump bonding or wire bonding after manufacturing both parts separately. The latter method has an advantage of the high yield because the optimized and specialized fabrication process can be chosen in designing and manufacturing each part. In this paper, LACIS chip, that is optimized design for the latter method of fabrication, is presented. The LACIS chip consists of a 3-TR pixel photodiode array, row driver (or called as a gate driver) circuit, and bonding pads to the external readout ICs. Among 4 types of the photodiode structure available in a standard CMOS process, $N_{photo}/P_{epi}$ type photodiode showed the highest quantum efficiency in the simulation study, though it requires one additional mask to control the doping concentration of $N_{photo}$ layer. The optimized channel widths and lengths of 3 pixel transistors are also determined by simulation. The select transistor is not significantly affected by channel length and width. But source follower transistor is strongly influenced by length and width. In row driver, to reduce signal time delay by high capacitance at output node, three stage inverter drivers are used. And channel width of the inverter driver increases gradually in each step. The sensor has very long metal wire that is about 170 mm. The repeater consisted of inverters is applied proper amount of pixel rows. It can help to reduce the long metal-line delay.

InAs/GaSb 응력초격자를 이용한 적외선검출소자의 제작 및 특성 연구 (Fabrication and Device Characteristics of Infrared Photodetector Based on InAs/GaSb Strained-Layer Superlattice)

  • 김준오;신현욱;최정우;이상준;김창수;노삼규
    • 한국진공학회지
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    • 제18권2호
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    • pp.108-115
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    • 2009
  • 150 주기의 InAs/GaSb (8/8-ML) 제2형 응력초격자 (SLS)를 활성층에 탑재한 초격자 적외선검출소자 (SLIP) 구조를 MBE 방법으로 성장하고, 직경 $200{\mu}m$의 개구면을 가지는 SLIP 개별소자를 시험 제작하였다 고분해능 투과전자현미경 (TEM) 이미지의 휘도분포와 X선회절 (XRD) 곡선의 위성피크의 분석 결과는 SLS 활성층은 균일한 층두께와 주기적 응력변형을 유지하는 급격한 계면의 초격자임을 입증하였다. 흑체복사 적외선 광원을 이용하여 측정한 입사파장 및 인가전압에 따른 반응도 (R)와 검출률 ($D^*$)로부터, 차단파장은 ${\sim}5{\mu}m$이고 최대 R과 $D^*$ ($\lambda=3.25{\mu}m$)는 각각 ${\sim}10^3mA/W$ (-0.6 V/13 K)와 ${\sim}10^9cm.Hz^{1/2}/W$ (0 V/13 K)임을 보였다. 반응도의 온도의존성으로부터 분석한 활성화에너지 275 meV는 광반응 과정에 개입되어 있는 가전대 및 전도대 부준위 사이의 에너지 간격 (HH1-C)과 잘 일치하였다.

마산과 행암 지역으로 유입되는 다환방향족탄화수소(PAHs)의 대기 침적 플럭스 산정과 특성 (Estimation and Characteristics of Atmospheric Deposition Flux of Polycyclic Aromatic Hydrocarbons (PAHs) into the Masan and Haengam Areas of Korea)

  • 이수정;문효방;최민규
    • 한국환경과학회지
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    • 제15권2호
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    • pp.121-131
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    • 2006
  • Atmospheric bulk (wet and dry) samples were monthly collected in Masan and Heangam areas of Korea, to assess the deposition flux and seasonal variation of polycyclic aromatic hydrocarbons (PAHs). Deposition fluxes of PAHs in bulk samples were determined using gas chromatography coupled to mass spectrometer detector (GC/MSD). Particle deposition fluxes from Masan and Haengam areas varied from 13 to $87\;g/m^2/year$ and from 5 to $52\;g/m^2/year$, respectively. PAHs deposition fluxes in atmospheric bulk samples in Masan and Haengam areas ranged from 135 to $464\;{\mu}g/m^2/year$ and from 62.2 to $194\;{\mu}g/m^2/year$, respectively. Atmospheric deposition fluxes of particles and PAHs in this study were comparable to or slightly lower values than those from different locations in Korea and other countries. PAHs profiles of atmospheric deposition bulk samples showed slightly different from two sampling areas, however the predominant species of PAHs were similar. Indeno (1,2,3-c,d)pyrene, benzo(g,h,i)perylene, phenanthrene compounds were the most detected PAHs in deposition bulk samples. Carcinogenic PAHs occupied the contribution of approximately $30-40\%$ of the total PAHs deposition fluxes. The non-metric multi-dimensional scaling (MDS) was used, to assess the differentiation of PAHs source between two sampling areas. The result suggests that PAHs contamination sources were different according to the location and season surveyed. There was no an apparent relationship between the PAHs deposition flux against temperature and rainfall amount, even though summer season with the highest temperature and the largest amount of precipitation showed the lowest PAHs deposition flux. Benzo(e)pyrene/benzo(a)pyrene ratio indicated that the photo-degradation process was one of important factors to the seasonal variation of PAHs with the lower deposition fluxes.

UV Responsive Characteristics of n-Channel Schottky Barrier MOSFET with ITO as Source/Drain Contacts

  • Kim, Tae-Hyeon;Lee, Chang-Ju;Kim, Dong-Seok;Sung, Sang-Yun;Heo, Young-Woo;Lee, Jung-Hee;Hahm, Sung-Ho
    • 센서학회지
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    • 제20권3호
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    • pp.156-161
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    • 2011
  • We fabricated a schottky barrier metal oxide semiconductor field effect transistor(SB-MOSFET) by applying indium-tin-oxide(ITO) to the source/drain on a highly resistive GaN layer grown on a silicon substrate. The MOSFET, with 10 ${\mu}M$ gate length and 100 ${\mu}M$ gate width, exhibits a threshold gate voltage of 2.7 V, and has a sub-threshold slope of 240 mV/dec taken from the $I_{DS}-V_{GS}$ characteristics at a low drain voltage of 0.05 V. The maximum drain current is 18 mA/mm and the maximum transconductance is 6 mS/mm at $V_{DS}$=3 V. We observed that the spectral photo-response characterization exhibits that the cutoff wavelength was 365 nm, and the UV/visible rejection ratio was about 130 at $V_{DS}$ = 5 V. The MOSFET-type UV detector using ITO, has a high UV photo-responsivity and so is highly applicable to the UV image sensors.

그래핀 전계효과 트랜지스터의 광응답 특성

  • 이대영;민미숙;라창호;이효영;유원종
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.193-194
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    • 2012
  • 그래핀(graphene)은 탄소원자가 육각형 벌집 모양 배열의 격자구조를 가지는 원자 한층 두께의 이차원 물질이다. 그래핀은 전도띠(conduction band)와 가전자띠(valence band)가 한 점에서 만나고 에너지와 역격자의 k 벡터가 선형적으로 비례하는 에너지 구조를 가진다. 이로 인해 그래핀은 매우 빠른 전하 이동도를 가지며 원자 한 층의 두께임에도 불구하고 약 2.3%의 빛을 흡수할 수 있으며 자외선 영역부터 적외선 영역까지의 넓은 파장대의 빛을 흡수 할 수 있다. 이와 같은 그래핀의 우월한 성질을 이용하면 광 응답에 고속으로 반응하고 높은 주파수의 광통신에서도 작동 할 수 있는 그래핀 광소자를 제작할 수 있게 된다. 하지만 미래의 고속 그래핀 광소자를 실현하기에 앞서 그래핀의 광응답에 대한 정확한 이해가 필요하다. 그리하여 본 연구에서는 그래핀 광소자를 제작하고 광소자의 광응답 전기적 성질을 분석하여 그래핀의 광응답 특성을 얻어내고자 실험을 진행하였다. 그래핀을 채널 물질로 하고 소스, 드레인, 후면 게이트를 가지는 일반적인 그래핀 전계효과 트랜지스터(field-effect transistor)를 제작하고 채널에 빛을 비추고 비추지 않은 상태에서의 전기적 성질을 측정하고 그 때 얻어진 그래프의 광응답의 원인을 조사하였다. 이 때 얻어지는 $I_D-V_G$ 그래프가 광 조사 시 왼쪽으로 이동하게 되는데 이의 원인을 각 게이트 전압 구간별로 $I_D$-t 그래프를 획득하여 분석하였다. 또한 광원에 펄스를 인가하여 펄스 형태의 광원을 그래핀 전계효과 트랜지스터에 조사시키고 이에 따른 전기적 성질 변화를 관찰하였다 이 때 다양한 게이트 전압이 인가된 상태에서 레이저 펄스 광원에 의한 광전류를 검출하였으며 이를 분석하였다.

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다중속도의 광신호 추출 및 클락-데이터 복원회로 설계 (Design of A Clock-and-Data Recovery Circuit for Detection and Reconstruction of Broadband Multi-rate Optical Signals)

  • 김강욱
    • 센서학회지
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    • 제12권4호
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    • pp.191-197
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    • 2003
  • 최근 인터넷 사용의 증가로 인한 데이터 전송이 급속히 증가하고 있고, 이러한 전송을 위해 광섬유가 주로 사용되고 있다. 장거리 통신을 통한 신호의 감쇄 및 왜곡을 보정하기 위하여 보통 광신호를 전기적인 신호로 변환하여 신호를 재생한다. 이러한 광신호는 포토 다이오드를 통하여 전기적인 신호로 바꾸어지는데, 광신호의 정확한 클락과 데이터를 추출하는 과정은 필수적이다. 본 연구에서는 광대역의 광신호 클락과 데이터의 복원에 쓰이는 클락-데이터 복원회로(CDR)를 1.8V $0.18\;{\mu}m$ CMOS공정을 이용하여 설계하였다. 이 CDR 회로는 위상고정 루프를 사용한 회로로서 개선된 위상비교기 및 전하 펌프를 사용하였다. 특히 설계된 CDR은 광대역 링 발진기를 사용함으로서 750 Mb/s에서 2.85 Gb/s의 다중속도를 가진 데이터의 클락과 데이터의 복원이 가능하다.

Serial line multiplexing method based on bipolar pulse for PET

  • Kim, Yeonkyeong;Choi, Yong;Kim, Kyu Bom;Leem, Hyuntae;Jung, Jin Ho
    • Nuclear Engineering and Technology
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    • 제53권11호
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    • pp.3790-3797
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    • 2021
  • Although the individual channel readout method can improve the performance of PET detectors with pixelated photo-sensors, such as silicon photomultiplier (SiPM), this method leads to a significant increase in the number of readout channels. In this study, we proposed a novel multiplexing method that could effectively reduce the number of readout channels to reduce system complexity and development cost. The proposed multiplexing circuit was designed to generate bipolar pulses with different zero-crossing points by adjusting the time constant of the high-pass filter connected to each channel of a pixelated photo-sensor. The channel position of the detected gamma-ray was identified by estimating the width between the rising edge and the zero-crossing point of the bipolar pulse. In order to evaluate the performance of the proposed multiplexing circuit, four detector blocks, each consisting of a 4 × 4 array of 3 mm × 3 mm × 20 mm LYSO and a 4 × 4 SiPM array, were constructed. The average energy resolution was 13.2 ± 1.1% for all 64 crystal pixels and each pixel position was accurately identified. A coincidence timing resolution was 580 ± 12 ps. The experimental results indicated that the novel multiplexing method proposed in this study is able to effectively reduce the number of readout channels while maintaining accurate position identification with good energy and timing performance. In addition, it could be useful for the development of PET systems consisting of a large number of pixelated detectors.

PET-MR 시스템에 적용을 위한 실리콘 광증배센서의 온도 변화에 따른 성능 열화 분석 (An Analysis on Performance Degradation of Silicon Photomultipliers over Temperatures Variation for PET-MR Application)

  • 박경진;김형택;임경택;조민식;김기윤;조규성
    • 방사선산업학회지
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    • 제9권3호
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    • pp.143-151
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    • 2015
  • A PET-MR system is particularly useful in diagnosing brain diseases. We have developed a prototype positron emission tomography (PET) system which can be inserted into the bore of a whole-body magnetic resonance imaging (MRI) system that enables us to obtain PET and MRI images simultaneously with a reduced cost. Silicon photomultipliers (SiPM) are appropriated as a PET detector at PET/MR system because detectors have a high gain and are insensitive to magnetic fields. Despite of its improved performance compared to that of PMT-based detectors, there is a problem of the photo-peak channel shift which is due to the increase of the temperature inside the ring detector. This problem will occur decreasing sensitivity of the PET and image distortion. In this paper, I quantitative analyze parameters of the KAIST SiPM depending on temperature by experiments. And I designed cooling methods in consideration of the degradation of sensors for correction of the temperature in the PET gantry. According to this research, we expect that distortive images and degradation of the sensitivity will not be occurred with using the above idea to reduce heat even if the PET system operates for a long time.

Comparison of Machine Learning-Based Radioisotope Identifiers for Plastic Scintillation Detector

  • Jeon, Byoungil;Kim, Jongyul;Yu, Yonggyun;Moon, Myungkook
    • Journal of Radiation Protection and Research
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    • 제46권4호
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    • pp.204-212
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    • 2021
  • Background: Identification of radioisotopes for plastic scintillation detectors is challenging because their spectra have poor energy resolutions and lack photo peaks. To overcome this weakness, many researchers have conducted radioisotope identification studies using machine learning algorithms; however, the effect of data normalization on radioisotope identification has not been addressed yet. Furthermore, studies on machine learning-based radioisotope identifiers for plastic scintillation detectors are limited. Materials and Methods: In this study, machine learning-based radioisotope identifiers were implemented, and their performances according to data normalization methods were compared. Eight classes of radioisotopes consisting of combinations of 22Na, 60Co, and 137Cs, and the background, were defined. The training set was generated by the random sampling technique based on probabilistic density functions acquired by experiments and simulations, and test set was acquired by experiments. Support vector machine (SVM), artificial neural network (ANN), and convolutional neural network (CNN) were implemented as radioisotope identifiers with six data normalization methods, and trained using the generated training set. Results and Discussion: The implemented identifiers were evaluated by test sets acquired by experiments with and without gain shifts to confirm the robustness of the identifiers against the gain shift effect. Among the three machine learning-based radioisotope identifiers, prediction accuracy followed the order SVM > ANN > CNN, while the training time followed the order SVM > ANN > CNN. Conclusion: The prediction accuracy for the combined test sets was highest with the SVM. The CNN exhibited a minimum variation in prediction accuracy for each class, even though it had the lowest prediction accuracy for the combined test sets among three identifiers. The SVM exhibited the highest prediction accuracy for the combined test sets, and its training time was the shortest among three identifiers.