Properties of Pt/![]() |
신상훈
(경북대학교 센서공학과)
정영로 (경북대학교 센서공학과) 이재훈 (경북대학교 전자전기공학부) 이용현 (경북대학교 전자전기공학부) 이명복 (경북대학교 전자전기공학부) 이정희 (경북대학교 전자전기공학부) 이인환 (삼성종합기술원) 한윤봉 (전북대학교 화학공학과) 함성호 (경북대학교 전자전기공학부) |
1 | E. Monroy, F. Calle, and E. Munoz, 'AlxGalxN:Si Schottky barrier photo-diodes with fast response and high detectivity,' Appl. Phys. Lett. Vol. 73, p. 2146, 1998 DOI ScienceOn |
2 | B. Yang, D. J. H. Lambert, T. Li, C. J. Collins, M. M. Wong, U. Chowdhury, R. D. Dupuis, and J. C. Cambell, 'High-performance back-illuminated solar blind AlGaN metal-semiconductor-metal photo-detectors,' Electronics Letters, Vol. 36, No. 22, 2000 DOI ScienceOn |
3 | Suk-Hun Lee, Jae-Kyu Chun, Jae-Jin Hur, Jae-Seung Lee, Gi-Hong Rue, Young-Ho Bae, Sung-Ho Hahm, Yong-Hyun Lee, and Jung-Hee Lee, 'RuO2/GaN Schottky Contact Formation with Superior Forward and Reverse Characteristics,' IEEE Electron Device Letters, Vol. 21, No.6, June 2000 |
4 | David L. Pulfrey, J.J. Ku, Michael P. Leslie, Brett D. Nener, Giacinta Parish, Umesh K. Mishra, P. Kozodoy, and J. Tarsa, 'High UV/solar rejection ratios in GaN/AlGaN/GaN pin photo-diodes,' IEEE Elec. Devices, Vol. 48, No. 3, 2001 DOI ScienceOn |
5 | B.W. Lim, P.C. Chen, J.Y. Yang, and M.A. Khan, 'High reponsivity intrinsic photoconductors based on AlxGal-xN,' Appl. Phys. Lett., Vol. 68, p. 3761, 1996. DOI ScienceOn |
6 | S. Keller, R. Vetury, G. Parish, S. P. DenBaars, and U. K. Mishra, 'Effect of growth termination conditions on the performance of AlGaN/GaN high eletron mobility transistors,' Appl. Phys. Lett., Vol. 78, p. 3088, 2001 DOI ScienceOn |
7 | Peter Sandvik, Kan Mi, Fatemeh Shahedipour, Ryan Mcclintock, Alireza Yasan, Patrick Kung, and Manijeh Razeghi, 'AlGaN for solar-blind UV detectors,' Journal of Crystal Growth, Vol. 231, p. 366, 2001 DOI ScienceOn |
8 | A. Osinsky, S. Gangopadhyay, B. W. Lim, M. Z. Anwar, and M. A. Khan, 'Schottky barrier photodetectors based on AlGaN', Appl. Phys. Lett. Vol. 72, p. 742, 1998 DOI ScienceOn |
9 | J. Han, K. E. Waldrip, S. R. Lee, J. J. Figel, S. J. Heame, G. A. Petersen, and S. M. Myers, 'Control and elimination of cracking of AlGaN using low-temperature AlGaN interlayers,' Appl. Phys. Lett., Vol. 78, p. 67, 2001 DOI ScienceOn |
10 | 신상훈, '쇼트키 전극을 이용한 Pt/AlGaN 자외선 수광소자의 제작 및 특성,' 경북대학교 센서 공학과 졸업논문, 2002 |
11 | Peter Sandvik, Kan Mi, Fatemeh Shahedipour, Ryan Mcclintock, Alireza Yasan, Patrick Kung, and Manijeh Razeghi, 'AlGaN for solar-blind UV detectors,' Journal of Crystal Growth, Vol. 231, p. 366, 2001 DOI ScienceOn |
12 | Cyril Pernot, Akira Hirano, Motoaki Iwaya, Theeradetch Detchprohm, Hiroshi Amano, and Isamu Akasaki, 'Solar-Blind UV photodetectors based on GaN/AlGaN pin photodiodes,' Jpn. J. Appl. Phys., Vol. 39, p. 387, 2000 DOI |
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