Browse > Article

Properties of Pt/${Al_0.33}{Ga_0.67}N$ Schottky Type UV Photo-detector  

신상훈 (경북대학교 센서공학과)
정영로 (경북대학교 센서공학과)
이재훈 (경북대학교 전자전기공학부)
이용현 (경북대학교 전자전기공학부)
이명복 (경북대학교 전자전기공학부)
이정희 (경북대학교 전자전기공학부)
이인환 (삼성종합기술원)
한윤봉 (전북대학교 화학공학과)
함성호 (경북대학교 전자전기공학부)
Publication Information
Abstract
Schottky type A $l_{0.33}$G $a_{0.67}$N ultraviolet photodetectors were fabricated on the MOCVD grown AlGaN/ $n^{+}$-GaN and AlGaN/AlGaN interlayer/ $n^{+}$-GaN structures. The grown layers have the carrier concentrations of -$10^{18}$, and the mobilities were 236 and 269 $\textrm{cm}^2$/V.s, respectively. After mesa etching by ICP etching system, the Si3N4 layer was deposited for passivation between the contacts and Ti/AL/Ni/Au and Pt were deposited for ohmic and Schottky contact, respectively. The fabricated Pt/A $l_{0.33}$G $a_{0.67}$N Schottky diode revealed a leakage current of 1 nA for samples with interlayer and 0.1$\mu\textrm{A}$ for samples without interlayer at a reverse bias of -5 V. In optical measurement, the Pt/A $l_{0.33}$G $a_{0.67}$N diode with interlayer showed a cut-off wavelength of 300 nm, a prominent responsivity of 0.15 A/W at 280 nm and a UV-visible extinction ratio of 1.5x$10^4./TEX>.
Keywords
AlGaN; UV Photo-detector; Schottky;
Citations & Related Records
연도 인용수 순위
  • Reference
1 E. Monroy, F. Calle, and E. Munoz, 'AlxGalxN:Si Schottky barrier photo-diodes with fast response and high detectivity,' Appl. Phys. Lett. Vol. 73, p. 2146, 1998   DOI   ScienceOn
2 B. Yang, D. J. H. Lambert, T. Li, C. J. Collins, M. M. Wong, U. Chowdhury, R. D. Dupuis, and J. C. Cambell, 'High-performance back-illuminated solar blind AlGaN metal-semiconductor-metal photo-detectors,' Electronics Letters, Vol. 36, No. 22, 2000   DOI   ScienceOn
3 Suk-Hun Lee, Jae-Kyu Chun, Jae-Jin Hur, Jae-Seung Lee, Gi-Hong Rue, Young-Ho Bae, Sung-Ho Hahm, Yong-Hyun Lee, and Jung-Hee Lee, 'RuO2/GaN Schottky Contact Formation with Superior Forward and Reverse Characteristics,' IEEE Electron Device Letters, Vol. 21, No.6, June 2000
4 David L. Pulfrey, J.J. Ku, Michael P. Leslie, Brett D. Nener, Giacinta Parish, Umesh K. Mishra, P. Kozodoy, and J. Tarsa, 'High UV/solar rejection ratios in GaN/AlGaN/GaN pin photo-diodes,' IEEE Elec. Devices, Vol. 48, No. 3, 2001   DOI   ScienceOn
5 B.W. Lim, P.C. Chen, J.Y. Yang, and M.A. Khan, 'High reponsivity intrinsic photoconductors based on AlxGal-xN,' Appl. Phys. Lett., Vol. 68, p. 3761, 1996.   DOI   ScienceOn
6 S. Keller, R. Vetury, G. Parish, S. P. DenBaars, and U. K. Mishra, 'Effect of growth termination conditions on the performance of AlGaN/GaN high eletron mobility transistors,' Appl. Phys. Lett., Vol. 78, p. 3088, 2001   DOI   ScienceOn
7 Peter Sandvik, Kan Mi, Fatemeh Shahedipour, Ryan Mcclintock, Alireza Yasan, Patrick Kung, and Manijeh Razeghi, 'AlGaN for solar-blind UV detectors,' Journal of Crystal Growth, Vol. 231, p. 366, 2001   DOI   ScienceOn
8 A. Osinsky, S. Gangopadhyay, B. W. Lim, M. Z. Anwar, and M. A. Khan, 'Schottky barrier photodetectors based on AlGaN', Appl. Phys. Lett. Vol. 72, p. 742, 1998   DOI   ScienceOn
9 J. Han, K. E. Waldrip, S. R. Lee, J. J. Figel, S. J. Heame, G. A. Petersen, and S. M. Myers, 'Control and elimination of cracking of AlGaN using low-temperature AlGaN interlayers,' Appl. Phys. Lett., Vol. 78, p. 67, 2001   DOI   ScienceOn
10 신상훈, '쇼트키 전극을 이용한 Pt/AlGaN 자외선 수광소자의 제작 및 특성,' 경북대학교 센서 공학과 졸업논문, 2002
11 Peter Sandvik, Kan Mi, Fatemeh Shahedipour, Ryan Mcclintock, Alireza Yasan, Patrick Kung, and Manijeh Razeghi, 'AlGaN for solar-blind UV detectors,' Journal of Crystal Growth, Vol. 231, p. 366, 2001   DOI   ScienceOn
12 Cyril Pernot, Akira Hirano, Motoaki Iwaya, Theeradetch Detchprohm, Hiroshi Amano, and Isamu Akasaki, 'Solar-Blind UV photodetectors based on GaN/AlGaN pin photodiodes,' Jpn. J. Appl. Phys., Vol. 39, p. 387, 2000   DOI