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http://dx.doi.org/10.5757/JKVS.2009.18.2.108

Fabrication and Device Characteristics of Infrared Photodetector Based on InAs/GaSb Strained-Layer Superlattice  

Kim, J.O. (Department of Physics, Kyung Hee University)
Shin, H.W. (Department of Physics, Kyung Hee University)
Choe, J.W. (Department of Physics, Kyung Hee University)
Lee, S.J. (Global Research Laboratory on Quantum Detector Technology, Korea Research institute of Standards and Science)
Kim, C.S. (Global Research Laboratory on Quantum Detector Technology, Korea Research institute of Standards and Science)
Noh, S.K. (Global Research Laboratory on Quantum Detector Technology, Korea Research institute of Standards and Science)
Publication Information
Journal of the Korean Vacuum Society / v.18, no.2, 2009 , pp. 108-115 More about this Journal
Abstract
The superlattice infrared photodetector (SLIP) with an active layer of 8/8-ML InAs/GaSb type-II strained-layer superlattice (SLS) of 150 periods was grown by MBE technique, and the proto-type discrete device was defined with an aperture of $200-{\mu}m$ diameter. The contrast profile of the transmission electron microscope (TEM) image and the satellite peak in the x-ray diffraction (XRD) rocking curve show that the SLS active layer keeps abrupt interfaces with a uniform thickness and a periodic strain. The wavelength and the bias-voltage dependences of responsivity (R) and detectivity ($D^*$) measured by a blackbody radiation source give that the cutoff wavelength is ${\sim}5{\mu}m$, and the maximum Rand $D^*$ ($\lambda=3.25{\mu}m$) are ${\sim}10^3mA/W$ (-0.6 V/13 K) and ${\sim}10^9cm.Hz^{1/2}/W$ (0 V/13 K), respectively. The activation energy of 275 meV analyzed from the temperature dependent responsivity is in good agreement with the energy difference between two SLS subblevels of conduction and valence bands (HH1-C) involving in the photoresponse process.
Keywords
Infrared photo detector; InAs/GaSb; Strained-layer superlattice; Transmission electron microscopy (TEM); X-ray diffraction (XRD); Responsivity (R); Detectivity ($D^*$);
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1 S. Krishna, D. Fonnan, S. Annamalai, P. Dowd, P. Varangis, T. Tumolillo, Jr., A. Gray, 1. Zilko, K. Sun, M. Liu, 1. campbell, and D. Carothers, AppL Phys. Lett. 86, 193501 (2005)   DOI   ScienceOn
2 E. Plis, J. B. Rodriguez, H. S. Kim, G. Bishop, Y. Shanha, R. Dawson, S. J. Lee, C. E. Jones, V. Gopal, and S. Krishna, Appl. Phys. Lett. 91, 133512 (2007)   DOI   ScienceOn
3 S. Mou, A. Petschke, Q. Liu, S. L. Chuang, J. V. Li, and C. J. Hill, Appl. Phys. Lett. 92, 153505 (2008)   DOI   ScienceOn
4 S. Maison and G. W. Wicks, Appl. Phys. Lett. 89, 151109 (2006)   DOI   ScienceOn
5 J. O. Kim, H. W. Shin, J. W. Choe, S. J. Lee, and S. K. Noh, J. Korean Vacuum Soc., Submitted (2009)
6 S. J. Lee, S. K. Noh, L. R. Dawson, and S. Krishna, J. Korean Phys. Soc. 54, 280 (2009)   DOI   ScienceOn
7 B.-M. Nguyen, D. Hoffman, P.-Y. De1aunay, and M. Razeghi, Appl. Phys. Lett. 91, 163511 (2007)   DOI
8 A. Khoshakh1agh, J. B. Rodriguez, E. Plis, G. D. 114 Bishop, Y. D. Shanna, H. S. Kim, L. R. Dawson, and S. Krishna, Appl. Phys. Lett. 91, 263504 (2007)   DOI   ScienceOn
9 S. Tsao, II. Lim, W. Zhang, and M. Razeghi, Appl. Phys. Lett. 90, 201109 (2007)   DOI   ScienceOn
10 J. O. Kim, S. J. Lee, S. K. Noh, J. W. Choe, and T. W. Kang, J. Korean Phys. Soc. 53, 2100 (2008)   ScienceOn
11 J. Steinshnider, M. Weimer, R. Kaspi, and G. W. Turner, Phys. Rev. Lett. 85, 2953 (2000)   DOI   ScienceOn
12 E.-T. Kim, Z. Chen, and A. Madhukar, J. Korean Phys. Soc. 49, 837 (2006)   ScienceOn
13 A. P. Ongstad, R. Kaspi, C. E. Moeller, M. L. Tilton, D. M. Gianardi, J. R. Chavez, and G. C. Dente, J. Appl. Phys. 89, 2185 (2001)   DOI   ScienceOn
14 H. S. Kim, E. P1is, J. B. Rodriguez, G. D. Bishop, Y. D. Shanna, L. R. Dawson, S. Krishna, J. Bundas, R. Cook, D. Burrows, R. Dennis, K. Patnaude, A. Reisinger, and M. Sundaram, Appl. Phys. Lett. 92, 183502 (2008)   DOI   ScienceOn
15 M. Herrera, M. Chi, M. Bonds, N. D. Browing, J. N. Woolman, R. E. Kvaas, S. F. Harris, D. R. Rhiger, and c.. J. Hill, Appl. Phys. Lett. 93, 093106 (2008)   DOI   ScienceOn
16 S. G. Choi, A. S. Reddy, B.-G. Yu, H. Ryu, and H.-H. Park, J. Korean Vaccum Soc. 17, 130 (2008)   과학기술학회마을   DOI   ScienceOn
17 P. S. Dutta and H. L. Bhat, J. Appl. Phys. 81, 5821 (1997)   DOI   ScienceOn
18 R. Kaspi, C. Moeller, A. Ongstad, M. L. Tilton, D. Gianardi, G. Dente, and P. Gopa1adasu, Appl. Phys. Lett. 76, 409 (2000)   DOI   ScienceOn
19 G. C. Dente and M. L. Tilton, J. Appl. Phys. 86, 1420 (1999)   DOI
20 B. Movaghar, S. Tsao, S. Tsao, S. A. Pour, T. Yamanaka, and M. Razeghi, Phys. Rev. B 78, 115320 (2008)   DOI   ScienceOn
21 W. Q. Ma, X. J. Yang, M. Chong, T. Yang, L. H. Chcn, J. Shao, X. Lu, W. Lu, C. Y. Song, and H. C. Lin, AppL Phys. Lett. 93, 013502 (2008)   DOI   ScienceOn