Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
권호 표지
DOI QR코드

DOI QR Code

UV Responsive Characteristics of n-Channel Schottky Barrier MOSFET with ITO as Source/Drain Contacts

  • Kim, Tae-Hyeon (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Lee, Chang-Ju (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Kim, Dong-Seok (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Sung, Sang-Yun (School of Materials Science and Engineering, Kyungpook National University) ;
  • Heo, Young-Woo (School of Materials Science and Engineering, Kyungpook National University) ;
  • Lee, Jung-Hee (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Hahm, Sung-Ho (School of Electrical Engineering and Computer Science, Kyungpook National University)
  • Received : 2011.01.19
  • Accepted : 2011.05.06
  • Published : 2011.05.31
Download PDF
⟨ Previous Next ⟩

Abstract

We fabricated a schottky barrier metal oxide semiconductor field effect transistor(SB-MOSFET) by applying indium-tin-oxide(ITO) to the source/drain on a highly resistive GaN layer grown on a silicon substrate. The MOSFET, with 10 ${\mu}M$ gate length and 100 ${\mu}M$ gate width, exhibits a threshold gate voltage of 2.7 V, and has a sub-threshold slope of 240 mV/dec taken from the $I_{DS}-V_{GS}$ characteristics at a low drain voltage of 0.05 V. The maximum drain current is 18 mA/mm and the maximum transconductance is 6 mS/mm at $V_{DS}$=3 V. We observed that the spectral photo-response characterization exhibits that the cutoff wavelength was 365 nm, and the UV/visible rejection ratio was about 130 at $V_{DS}$ = 5 V. The MOSFET-type UV detector using ITO, has a high UV photo-responsivity and so is highly applicable to the UV image sensors.

Keywords

References

  1. H. Yu, L. McCarthy, S. Rajan, S. Keller, S. Denbaars, J. Speck, and U. Mishra, "Ion implanted AlGaN-GaN HEMTs with nonalloyed ohmic contacts," IEEE Electron Device Lett., vol. 26, no. 5, pp. 283-285, 2005. https://doi.org/10.1109/LED.2005.846583
  2. K. Shiojima, T. Sugahara, and S. Sakai, "Large schottky barrier for Ni/p-GaN contacts," Appl. Phys. Lett., vol. 74, no. 14, pp. 1936-1938, 1999. https://doi.org/10.1063/1.123733
  3. J. I. Pankove, "Perspective on gallium nitride," in Proc. Master. Res. Soc., vol.162, pp. 515-519, 1990.
  4. H.-B. Lee, H.-I. Cho, H.-S. An, J.-H. Lee, and S.-H. Hahm, "Enhancement mode operation and ultraviolet responsivity of n-channel GaN metal-insulator-semiconductor field effect transistor with schottky barrier source and drain," Jpn. J. Appl. Phys., vol. 46, no. 4B, pp. 2348-2351, 2007. https://doi.org/10.1143/JJAP.46.2348
  5. H.-B. Lee, H.-I. Cho, H.-S. An, Y.-H. Bae, M.-B. Lee, J.-H. Lee, and S.-H. Hahm, "A normally off GaN n-MOSFET with schottky-barrier source and drain on a Si-auto-doped p-GaN/Si," IEEE Electron Device Lett., vol. 27, no. 2, pp. 81-83, 2006. https://doi.org/10.1109/LED.2005.862675
  6. W. Huang, T. Khan, and T. P. Chew, "Enhancement-mode n-channel GaN MOSFETs on p and n-GaN/Sapphire substrate," IEEE Electron Device Lett., vol. 27, no. 10, pp. 796-798, 2006. https://doi.org/10.1109/LED.2006.883054
  7. H. Kambayashi, Y. Niiyama, S. Ootomo, T. Nomura, M. Iwami, Y. Satoh, S. Kato, and S. Yoshida, "Normally off n-channel GaN MOSFETs on Si substrates using an SAG technique and ion implantation," IEEE Electron Device Lett., vol. 28, no. 12, pp. 1077-1079, 2007. https://doi.org/10.1109/LED.2007.909978
  8. T. Margalith, O. Buchinsky, D. A. Cohen, A. C. Abare, M. Hansen, S. P. DenBaars, and L. A. Coldren, "Induim tin oxide contacts to gallium nitride optoelectronic devices," Appl. Phys. Lett., vol. 74, no. 26, pp. 1930-1932, 1999.
  9. A. Dadgar, J. Blasing, A. Diez, A. Alam, M. Heuken, and A. Krost, "Metalorganic chemical vapor phase epitaxy of crack-free GaN on Si(111) exceeding 1 um in thickness", Jpn, J. Appl. Phys., vol. 39, no. 11B, pp. L1183-L1185, 2000. https://doi.org/10.1143/JJAP.39.L1183
  10. A. Krost and A. Dadgar, "GaN-based devices on Si", Phys. Stat. Sol. (a), vol.194, no. 2, pp. 361-375, 2002. https://doi.org/10.1002/1521-396X(200212)194:2<361::AID-PSSA361>3.0.CO;2-R