References
- H. Yu, L. McCarthy, S. Rajan, S. Keller, S. Denbaars, J. Speck, and U. Mishra, "Ion implanted AlGaN-GaN HEMTs with nonalloyed ohmic contacts," IEEE Electron Device Lett., vol. 26, no. 5, pp. 283-285, 2005. https://doi.org/10.1109/LED.2005.846583
- K. Shiojima, T. Sugahara, and S. Sakai, "Large schottky barrier for Ni/p-GaN contacts," Appl. Phys. Lett., vol. 74, no. 14, pp. 1936-1938, 1999. https://doi.org/10.1063/1.123733
- J. I. Pankove, "Perspective on gallium nitride," in Proc. Master. Res. Soc., vol.162, pp. 515-519, 1990.
- H.-B. Lee, H.-I. Cho, H.-S. An, J.-H. Lee, and S.-H. Hahm, "Enhancement mode operation and ultraviolet responsivity of n-channel GaN metal-insulator-semiconductor field effect transistor with schottky barrier source and drain," Jpn. J. Appl. Phys., vol. 46, no. 4B, pp. 2348-2351, 2007. https://doi.org/10.1143/JJAP.46.2348
- H.-B. Lee, H.-I. Cho, H.-S. An, Y.-H. Bae, M.-B. Lee, J.-H. Lee, and S.-H. Hahm, "A normally off GaN n-MOSFET with schottky-barrier source and drain on a Si-auto-doped p-GaN/Si," IEEE Electron Device Lett., vol. 27, no. 2, pp. 81-83, 2006. https://doi.org/10.1109/LED.2005.862675
- W. Huang, T. Khan, and T. P. Chew, "Enhancement-mode n-channel GaN MOSFETs on p and n-GaN/Sapphire substrate," IEEE Electron Device Lett., vol. 27, no. 10, pp. 796-798, 2006. https://doi.org/10.1109/LED.2006.883054
- H. Kambayashi, Y. Niiyama, S. Ootomo, T. Nomura, M. Iwami, Y. Satoh, S. Kato, and S. Yoshida, "Normally off n-channel GaN MOSFETs on Si substrates using an SAG technique and ion implantation," IEEE Electron Device Lett., vol. 28, no. 12, pp. 1077-1079, 2007. https://doi.org/10.1109/LED.2007.909978
- T. Margalith, O. Buchinsky, D. A. Cohen, A. C. Abare, M. Hansen, S. P. DenBaars, and L. A. Coldren, "Induim tin oxide contacts to gallium nitride optoelectronic devices," Appl. Phys. Lett., vol. 74, no. 26, pp. 1930-1932, 1999.
- A. Dadgar, J. Blasing, A. Diez, A. Alam, M. Heuken, and A. Krost, "Metalorganic chemical vapor phase epitaxy of crack-free GaN on Si(111) exceeding 1 um in thickness", Jpn, J. Appl. Phys., vol. 39, no. 11B, pp. L1183-L1185, 2000. https://doi.org/10.1143/JJAP.39.L1183
- A. Krost and A. Dadgar, "GaN-based devices on Si", Phys. Stat. Sol. (a), vol.194, no. 2, pp. 361-375, 2002. https://doi.org/10.1002/1521-396X(200212)194:2<361::AID-PSSA361>3.0.CO;2-R