• Journal of the Microelectronics and Packaging Society
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• v.23 no.3
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• pp.69-75
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• 2016

This study investigated the effect of heat treatment conditions not only on the Cr surface crack propagation behaviors but also on the Ni/Cr interfacial reaction characteristics in electroless Ni/electroplated Cr double coating layers on Cu substrate. Clear band layer of Ni-Cr solid solutions were developed at Ni/Cr interface after heat treatment at $750^{\circ}C$ for 6 h. Channeling cracks formed in Cr layer after 1 step heat treatment, that is, heat treatment after Ni/Cr plating, while little channeling cracks formed after 2 step heat treatment, that is, same heat treatments after Ni and Cr plating, respectively, due to residual stress relaxation due to crystallization of Ni layer before Cr plating.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.2
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• pp.43-48
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• 2017

Conductive $Sn_xO_y$ thin films were fabricated via RF reactive sputtering using SnO:Sn (80:20 mol%) composite target. The composite target was used to produce a chemically stable composition of $Sn_xO_y$ thin film while controlling structural defects by chemical reaction between tin and oxygen. During sputtering pressure, RF power, and substrate temperature were fixed, and oxygen partial pressure was varied from 0% to 12%. Annealing process was carried out at $300^{\circ}C$ for 1 hour in vacuum. Except $P_{O2}=0%$ sample, all samples showed the transmittance of 80~90% and amorphous phase before and after annealing. Electrically stable p-type $Sn_xO_y$ thin film with high transmittance was only obtained from the oxygen partial pressure at 12%. The carrier concentration and mobility for the $P_{O2}=12%$ were $6.36{\times}10^{18}cm^{-3}$ and $1.02cm^2V^{-1}s^{-1}$ respectively after annealing.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.2
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• pp.89-94
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• 2021

The mechanical reliability of flexible devices has become a major concern on their commercialization, where the importance of reliable bonding is highlighted. In terms of component materials' properties, it is important to consider thermal damage of polymer substrates that occupy large area of the flexible device. Therefore, room temperature bonding process is highly advantageous for implementing flexible device assemblies with mechanical reliability. Conventional epoxy resins for the bonding still require curing at high temperatures. Even after the curing procedure, the bonding joint loses flexibility and exhibits poor fatigue durability. To solve this problems, low-temperature and adhesive-free bonding are required. In this work, we develop a room temperature bonding process for polymer substrates using carbon nanotube heated by microwave irradiations. After depositing multiple-wall carbon nanotubes (MWNTs) on PET polymer substrates, they are heated locally with by microwave while the entire bonding specimen maintains room temperature and the heating induces mechanical entanglement of CNT-PET. The room temperature bonding was conducted for a PET/CNT/PET specimen at 600 watt of microwave power for 10 seconds. Thickness of the CNT bonding joint was very thin that it obtains flexibility as well. In order to evaluate the mechanical reliability of the joint specimen, we performed lap shear test, three-point bending test, and dynamic bending test, and confirmed excellent joint strength, flexibility, and bending durability from each test.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.4
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• pp.61-68
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• 2023

In this study, Sn-3.5Ag-15.0Fe composite solder was manufactured and applied to TLP bonding to change the entire joint into a Sn-Fe IMC(intermetallic compound), thereby applying it as a high-temperature solder. The FeSn₂ IMC formed during the bonding process has a high melting point of 513℃, so it can be stably applied to power modules for power semiconductors where the temperature rises up to 280℃ during use. As a result of applying ENIG surface treatment to both the chip and substrate, a multi-layer IMC structure of Ni₃Sn₄/FeSn₂/Ni₃Sn₄ was formed at the joint. During the shear test, the fracture path showed that cracks developed at the Ni₃Sn₄/FeSn₂ interface and then propagated into FeSn₂. After 2hours of the TLP joining process, a shear strength of over 30 MPa was obtained, and in particular, there was no decrease in strength at all even in a shear test at 200℃. The results of this study can be expected to lead to materials and processes that can be applied to power modules for electric vehicles, which are being actively researched recently.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.4
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• pp.105-111
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• 2023

Electronic devices have been evolved to be mechanically flexible that can be endured repetitive deformation. This evolution emphasizes the importance of long-term reliability in metal wiring connecting electronic components, especially under bending fatigue in compressed environments. This study investigated methods to enhance adhesion between copper (Cu) and polyimide (PI) substrates, aiming to improve the reliability of copper wiring under such conditions. We applied oxygen plasma treatment and introduced a chromium (Cr) adhesion layer to the polyimide substrate. Our findings revealed that these adhesion enhancement methods significantly affect compression fatigue behavior. Notably, the chromium adhesion layer, while showing weaker fatigue characteristics at 1.5% strain, demonstrated superior performance at 2.0% strain with no delamination, outperforming other methods. These results offer valuable insights for improving the reliability of flexible electronic devices, including reducing crack occurrence and enhancing fatigue resistance in their typical usage environments.

• Journal of the Microelectronics and Packaging Society
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• v.31 no.2
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• pp.85-91
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• 2024

In this study, we investigated a method of growing single crystal 𝛽-Ga₂O₃ thin films on a c-plane sapphire substrate using MOCVD. We confirmed the optimal growth conditions to increase the crystallinity of the 𝛽-Ga₂O₃ thin film and confirmed the effect of the ratio between O₂ and Ga precursors on crystal growth on the crystallinity of the thin film. The growth temperature range was 600~1100℃, and crystallinity was analyzed when the O₂/TMGa ratio was 800~6000. As a result, the highest crystallinity thin film was obtained when the molar ratio between precursors was 2400 at 1100℃. The surface of the thin film was observed with a FE-SEM and XRD ω-scan of the thin film, the FWHM was found to be 1.17° and 1.43° at the and (${\bar{2}}01$) and (${\bar{4}}02$) diffraction peaks. The optical band gap energy obtained was 4.78 ~ 4.88 eV, and the films showed a transmittance of over 80% in the near-ultraviolet and visible light regions.

• ETRI Journal
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• v.24 no.4
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• pp.290-298
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• 2002

We present, for the first time, a prototype active-matrix field emission display (AMFED) in which an amorphous silicon thin-film transistor (a-Si TFT) and a molybdenum-tip field emitter array (Mo-tip FEA) were monolithically integrated on a glass substrate for a novel active-matrix cathode (AMC) plate. The fabricated AMFED showed good display images with a low-voltage scan and data signals irrespective of a high voltage for field emissions. We introduced a light shield layer of metal into our AMC to reduce the photo leakage and back channel currents of the a-Si TFT. We designed the light shield to act as a focusing grid to focus emitted electron beams from the AMC onto the corresponding anode pixel. The thin film depositions in the a-Si TFTs were performed at a high temperature of above 360°C to guarantee the vacuum packaging of the AMC and anode plates. We also developed a novel wet etching process for $n^+-doped$ a-Si etching with high etch selectivity to intrinsic a-Si and used it in the fabrication of an inverted stagger TFT with a very thin active layer. The developed a-Si TFTs performed well enough to be used as control devices for AMCs. The gate bias of the a-Si TFTs well controlled the field emission currents of the AMC plates. The AMFED with these AMC plates showed low-voltage matrix addressing, good stability and reliability of field emission, and good light emissions from the anode plate with phosphors.

• Journal of Dairy Science and Biotechnology
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• v.35 no.3
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• pp.152-161
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• 2017

Cheese is an excellent substrate for yeast and mold growth. These organisms can cause cheese spoilage, resulting in significant food wastage and economic losses. In the context of cheese spoilage, the presence and effects of spoilage or pathogenic bacteria are well documented. In contrast, although yeasts and molds are responsible for much dairy food wastage, only a few studies have examined the diversity of spoilage fungi. This article reviews the spoilage yeasts and molds affecting cheeses in various countries. The diversity and number of fungi present were found to depend on the type of cheese. Important fungi growing on cheese include Candida spp., Galactomyces spp., Debaryomyces spp., Yarrowia spp., Penicillium spp., Aspergillus spp., Cladosporium spp., Geotrichum spp., Mucor spp., and Trichoderma spp.. In addition, several mold spoilage species, such as Aspergillus spp. and Penicillium spp., are able to produce mycotoxins, which may also be toxic to humans. There are many ways to eliminate or reduce toxin levels in foods and feeds. However, the best way to avoid mycotoxins in cheese is to prevent mold contamination since there are limitations to mold degradation or detoxifications in cheese. Chemical preservatives, natural products, and modified atmosphere packaging have been used to prevent or delay mold spoilage and improve product shelf life and food safety.

• Korean Journal of Materials Research
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• v.22 no.9
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• pp.454-458
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• 2012

Various adhesive materials are used in flip chip packaging for electrical interconnection and structural reinforcement. In cases of COF(chip on film) packages, low temperature bonding adhesive is currently needed for the utilization of low thermal resistance substrate films, such as PEN(polyethylene naphthalate) and PET(polyethylene terephthalate). In this study, the effects of anhydride and dihydrazide hardeners on the low-temperature snap cure behavior of epoxy based non-conductive pastes(NCPs) were investigated to reduce flip chip bonding temperature. Dynamic DSC(differential scanning calorimetry) and isothermal DEA(dielectric analysis) results showed that the curing rate of MHHPA(hexahydro-4-methylphthalic anhydride) at $160^{\circ}C$ was faster than that of ADH(adipic dihydrazide) when considering the onset and peak curing temperatures. In a die shear test performed after flip chip bonding, however, ADH-containing formulations indicated faster trends in reaching saturated bond strength values due to the post curing effect. More enhanced HAST(highly accelerated stress test) reliability could be achieved in an assembly having a higher initial bond strength and, thus, MHHPA is considered to be a more effective hardener than ADH for low temperature snap cure NCPs.

• Journal of Advanced Marine Engineering and Technology
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• v.37 no.4
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• pp.351-357
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• 2013

In flip chip packaging, underfill process is used to fill epoxy bonder into the gap between a chip and a substrate in order to improve the reliability of electronic devices. Underfill process by capillary motion can give rise to unwanted air void formations since the arrangement of solder bumps affects the interfacial dynamics of flow meniscus. In this paper, the unsteady flows in the capillary underfill process are visualized and then the racing effect and merging of the meniscus are investigated according to the arrangement of solder bumps. The result is shown that at higher bump density, the fluid flow perpendicular to the main direction of flow becomes stronger so that more air voids are formed. This phenomenon is more conspicuous at a staggered bump array than at a rectangular bump array.