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http://dx.doi.org/10.6117/kmeps.2017.24.2.043

Study of the effect of vacuum annealing on sputtered SnxOy thin films by SnO/Sn composite target  

Kim, Cheol (Graduate School of Nano-IT Design Convergence, Seoul National University of Science and Technology)
Cho, Seungbum (Graduate School of Nano-IT Design Convergence, Seoul National University of Science and Technology)
Kim, Sungdong (Department of Mechanical System Design Engineering, Seoul National University of Science and Technology)
Kim, Sarah Eunkyung (Graduate School of Nano-IT Design Convergence, Seoul National University of Science and Technology)
Publication Information
Journal of the Microelectronics and Packaging Society / v.24, no.2, 2017 , pp. 43-48 More about this Journal
Abstract
Conductive $Sn_xO_y$ thin films were fabricated via RF reactive sputtering using SnO:Sn (80:20 mol%) composite target. The composite target was used to produce a chemically stable composition of $Sn_xO_y$ thin film while controlling structural defects by chemical reaction between tin and oxygen. During sputtering pressure, RF power, and substrate temperature were fixed, and oxygen partial pressure was varied from 0% to 12%. Annealing process was carried out at $300^{\circ}C$ for 1 hour in vacuum. Except $P_{O2}=0%$ sample, all samples showed the transmittance of 80~90% and amorphous phase before and after annealing. Electrically stable p-type $Sn_xO_y$ thin film with high transmittance was only obtained from the oxygen partial pressure at 12%. The carrier concentration and mobility for the $P_{O2}=12%$ were $6.36{\times}10^{18}cm^{-3}$ and $1.02cm^2V^{-1}s^{-1}$ respectively after annealing.
Keywords
composite target; SnO; vacuum annealing; TCO; p-type;
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Times Cited By KSCI : 5  (Citation Analysis)
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