• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.171-174
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• 1994

The drive towards ultra-large-scale integrated circuits a continuous intermetal dielectric films for multi layer interconection. Optimum condition of remote plasma enhanced chemical vapour deposition(RPECVD) was achieved by orthogonal array method. Chracteristics of SiO$_2$ films deposited by using remote PECVD with N$_2$O gas were investigated. Etching rate of SiO$_2$ films in P-echant was about 6[A/s] that was the same as the thermal oxide. The films a showed high breakdown voltage of 7(MV/cm) and a resistivity of Bx10$\^$13/[$\Omega$cm] at 7(MV/cm). The interface Trap density of SiO$_2$ has been shown excel lent properties of 5x10$\^$10/[/$\textrm{cm}^2$eV]. It was observed that the dielectric constant dropped to a value of 4. 29 for 150 [W] RF power.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.152-155
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• 1994

The purpose of this paper is to develope an electron beam resist by the plasma polymerization. Plasma co-polymerized resist was prepared using an interelectrode gas-flow-type reactor. And then delineated pattern in the resist was developed with gas flow type reactor using Ar and O$_2$ gas as etching gas. We study about the effects of discharge power and mixing rate of the copolymerized thin film. The characteristics of molecular structure of thin film was investigated by FT-lR, DSC and GPC, and then was discussed in relation to its quality as a resist.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.266-267
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• 2009

본 논문에서는 As-doped ZnO 박막의 플라즈마 식각 특성 및 메커니즘에 관하여 실험을 수행하였다. p-type과 n-type ZnO 박막의 실험은 유도 결합 플라즈마 식각 장비(inductively coupled plasma; ICP)를 이용하였고, $CH_4/Ar$ 플라즈마의 가스의 비, RF 전력, DC 바이어스 전압과 공정 압력에 대한 식각 속도의 변화를 관찰 하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.247-247
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• 2009

3차원 반도체 패키징에서 관통전극 Through Silicon Via (TSV)를 형성하기 위하여 이온과 래디컬의 활성도 조절이 가능한 pulsating inductively coupled plasma (ICP) 식각을 수행하였다. 본 식각공정에서는 펄스주파수 ($50{\sim}500Hz$)와 듀티 싸이클 ($20{\sim}99%$)을 조절하여, 플라즈마 내 이온과 래디컬들의 활성도 변화를 발생시켰다. 플라즈마 공정변수에 따라 식각형태가 달라짐을 S.E.M을 이용하여 확인했으며, 이온(SFx+, O+)과 래디컬 ($SF^*$, $F^*$, $O^*$)의 농도 및 활성도 변화를 측정하기 위하여 광학적 기술인 optical emissin spectroscopy와 전기적 특성 측정 기술인 Langmuir probe 시스템을 직접 제작 설치하여 펄스플라즈마를 진단하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.499-499
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• 2012

This study was evaluated on etcher of capacitive coupled plasmas with OES (Optical Emission Spectroscopy) and impedance by VI probe that are widely used for process control and monitoring at semiconductor industry. The experiment was operated at conventional Ar and C4F8 plasma with variable change such as pressure and addition of gas (Atmospheric Leak: N2 and O2), RF, pressure, that are highly possible to impact wafer yield during wafer process, in order to observe OES and VI Probe signals. The sensitivity change on OES and Impedance by Vi probe was analyzed by statistical method to determine healthy of process. The main goal of this study is to understand unwanted tool performance to eventually improve productive capability. It is important for process engineers to actively adjust tool parameter before any serious problem occurs.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.768-773
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• 2005

We present an overview of our new method of liquid crystal (LC) alignment based on the anisotropic etching of the alignment layers with a directed plasma flux. The method is realized by the use of anode layer source of "race track" geometry generating two "sheets" of accelerated plasma. These sheets are directed obliquely to the treated substrates. The static and dynamic irradiation regimes have been explored. The optimized processing conditions and materials are discussed. The technique yields an excellent uniformity of liquid crystal alignment of planar, tilted and vertical types. It is shown that the new method can be easily adapted for the alignment treatment of large area substrates used in the modern LCD manufacturing process.

• Journal of the Semiconductor & Display Technology
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• v.10 no.4
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• pp.21-23
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• 2011

Uniformity of plasma etching processes critically depends on the wafer temperature and its distribution. The wafer temperature is affected by plasma, chucking force, He back side pressure and the surface temperature of ESC(electrostatic chuck). In this work, 3D mathematical modeling is used to investigate the influence of the geometry of coolant path and the temperature distribution of the ESC surface. The model that has the coolant path with less change of the cross-sectional area and the curvature shows low standard deviation of the ESC surface temperature distribution than the model with the coolant path of the larger surface area and more geometric change.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.9
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• pp.700-706
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• 2001

In this paper, I have fabricated and measured the gallium nitride(GaN) based Schottky diodes, and have carried out analyses of degradation of Schottky barrier characteristics. To improve of degraded Schottky barrier characteristics, I have carried out several experiments such as N$_2$ plasma exposure, annealing in N$_2$ ambient and annealing after N$_2$ plasma exposure. In the results of these experiments, I have achieved that only annealing in N$_2$ ambient is enough to improve the Schottky barrier characteristics, are temperature of 700$\^{C}$ and time of 90 sec in N$_2$ ambient furnace. for the analysis of these experiments, I have carried out the measurement of electric characteristics and quantitative analysis of etching damage using AES(Aguger Electron Spectroscopy).

• Journal of Electrical Engineering and Technology
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• v.7 no.6
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• pp.983-989
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• 2012

The purpose of this paper is to decide the optimum synthesis conditions of polycrystalline diamond films according to the ratio of gas mixture. Diamond films were deposited with cyclo-hexane as a carbon precursor by the microwave plasma enhanced chemical vapor deposition process. The optimum oxygen ratio to cyclo-hexane was reached about 125 % under the fixed 0.3% c-hexane in hydrogen. Oxygen plays a role in etching the graphitic components of carbon sp2 bond effectively. By OES measurement, the best synthesis conditions found out about 12.5 % and 15.75 %, which is the emission intensity ratios of CH(B-X) and $H{\beta}$ on $H{\alpha}$, respectively. Also, the electron temperature was similar about 5,000 to 5,200 K in this work.

• Journal of Surface Science and Engineering
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• v.29 no.5
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• pp.519-524
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• 1996

We synthesized semiconducting Sn-doped diamondlike carbon films by rf plasma-enhanced chemical vapor deposition using an organotin compound as a dopung gas source. XPS quan-titative analysis for the deposited films after 60 s argon ion etching revealed that Sn concen-tration increased with the partial pressure of the organotin compound in the reactant gas. In C 1s spectra, there was a component due to C-Su bond which had a negative chemical shift. C 1s spectra also indicated that the deposited films were relatively $sp^2$ rich. The chemical shift of the Sn-C bond in Sn $3d_{5/2}$ spectra was about +1.7 eV. The electrical resistivity and the optical transmittance were also investigated.