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http://dx.doi.org/10.5370/JEET.2012.7.6.983

Effect of Oxygen for Diamond Film Synthesis with C-Hexane in Microwave Plasma Enhanced CVD Process  

Han, Sang-Bo (Dept. of Electrical Engineering, Kyungnam University)
Publication Information
Journal of Electrical Engineering and Technology / v.7, no.6, 2012 , pp. 983-989 More about this Journal
Abstract
The purpose of this paper is to decide the optimum synthesis conditions of polycrystalline diamond films according to the ratio of gas mixture. Diamond films were deposited with cyclo-hexane as a carbon precursor by the microwave plasma enhanced chemical vapor deposition process. The optimum oxygen ratio to cyclo-hexane was reached about 125 % under the fixed 0.3% c-hexane in hydrogen. Oxygen plays a role in etching the graphitic components of carbon sp2 bond effectively. By OES measurement, the best synthesis conditions found out about 12.5 % and 15.75 %, which is the emission intensity ratios of CH(B-X) and $H{\beta}$ on $H{\alpha}$, respectively. Also, the electron temperature was similar about 5,000 to 5,200 K in this work.
Keywords
Chemical vapor deposition; Cyclo-hexane; Diamond films; Electron temperature; Optical emission spectroscopy; Oxygen;
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