한국표면공학회지 (Journal of the Korean institute of surface engineering)

  • 제29권5호
  • /
  • Pages.519-524
  • /
  • 1996
  • /
  • 1225-8024(pISSN)
  • /
  • 2288-8403(eISSN)
한국표면공학회 (The Korean Institute of Surface Engineering)
권호 표지

XPS STUDY ON SN-DOPED DLC FILMS PREPARED BY RF PLASMA-ENHANCED CVD

  • Inoue, Y. (Department of Materials Processing Engineering, Nagoya University) ;
  • Komoguchi, T. (Department of Materials Processing Engineering, Nagoya University) ;
  • Nakata, H. (Department of Materials Processing Engineering, Nagoya University) ;
  • Takai, O. (Department of Materials Processing Engineering, Nagoya University)
  • 발행 : 1996.10.01
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초록

We synthesized semiconducting Sn-doped diamondlike carbon films by rf plasma-enhanced chemical vapor deposition using an organotin compound as a dopung gas source. XPS quan-titative analysis for the deposited films after 60 s argon ion etching revealed that Sn concen-tration increased with the partial pressure of the organotin compound in the reactant gas. In C 1s spectra, there was a component due to C-Su bond which had a negative chemical shift. C 1s spectra also indicated that the deposited films were relatively $sp^2$ rich. The chemical shift of the Sn-C bond in Sn $3d_{5/2}$ spectra was about +1.7 eV. The electrical resistivity and the optical transmittance were also investigated.

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