• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.17-20
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• 2001

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectric were fabricated, and nitrogen distribution and bonding species which contributing memory characteristics were analyzed. Also, memory characteristics of devices according to anneal temperatures were investigated. The devices were fabricated by 0.35$\mu\textrm{m}$ retrograde twin well CMOS processes. The processes could be simple by in-situ process of nitridation anneal and reoxidation. The nitrogen distribution and bonding state of gate dielectric were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary ton Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). Nitrogen concentrations are proportional to nitridation anneal temperatures and the more time was required to form the same reoxidized layer thickness. ToF-SIMS results show that SiON species are detected at the initial oxide interface and Si$_2$NO species near the new Si-SiO$_2$ interface that formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. These could be said that nitrogen concentration near initial interface is limited to a certain quantity, so excess nitrogen are redistributed near the Si-SiO$_2$ interface and contributed to electron trap generation.

• The korean journal of orthodontics
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• v.25 no.6 s.53
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• pp.715-722
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• 1995

Orthodontic tooth movement in response to orthodontic force results from actions of osteoclasts and osteeoblasts in the cell level. Convincing evidence has now been provided to support the view that osteoclasts are derived from mononuclear cells that originate in the bone marrow or other hematopoietic organs and they migrate to the bones via vascular routes. Nitric oxide(NO), which accounts for the biological properties of endothelium-derived relaxing factor(EDRF), is the endogenous stimulator of soluble guanylate cylase. The discovery of the formation of nitric oxide(NO) from L-arginine in mammalian tissues and its biological roles has, in the last 7 years, thrown new light onto many areas of research. Data from experiments in vitro showed that N-metyl-L-arginine(L-NMA) and L-nitro-L- arginine(L-NAME) are competitive inhibitors of nitric oxide synthase. This study suggest that the multinucleated cells in our culture have characteristics of osteoclasts and that the potential bone cell activity of nitric oxide in vitro may be mediated in part by stimulation of marrow mononuclear cells to form osteoclast-like cells. Bone marrow cells were obtaineed from tibia of 19-days old chick embryo. After sacrifice, tibia was quickly dissected and the bone were then split to expose the medullary bone. The cells were attached for 4 hours and the nonadherent cells were collected. Marrow cells weere cultured in 96-well plate in medium 199. To examine the number of TRAP-positive multinucleated cells(MNCs), $10^{-8}\;M\;Vit=D_3$ and various concentration of L-NMA and L-NAME weere added at the beginning of cultures and with each medium change. After 7 days of culture. tartrate-resistant acid phosphatase(TRAP) staining was performed for microscopic evaluation. Cells haying more than three nuclei per cell were counted as MNCs. The obsrved results were as follows;1. 1,25-dihydroxyvitamine $D_3$ stimulated the osteoclast-like multinucleated cells in cultures of chick embryo bone marrow. 2. Nitric oxide synthase inhibitors(NOSI ; N-NMA, N-NAME) stimulated the osteoclast-like cells in cultures of chick embry bone marrow. 3. 1,25-dihydroxyvitamine$D_3$ and nitric oxide synthase inhibitors did not appear to have additive effect on the generation of TRAP-positive MNCs. These results suggest that nitric oxide synthase inhibitors may stimulate the osteoclast-like multinucleated cell formation and fusion in cultures of chick bone marrow.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.69-76
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• 2005

Interface-trap density, lifetime and Schottky barrier height of erbium-silicided Schottky diode are evaluated using equivalent circuit method. The extracted interface trap density, lifetime and Schottky barrier height for hole are determined as $1.5{\times}10^{13} traps/cm^2$, 3.75 ms and 0.76 eV, respectively. The interface traps are efficiently cured by $N_2$ annealing. Based on the diode characteristics, various sizes of erbium- silicided/platinum-silicided n/p-type Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are manufactured from 20 m to 35nm. The manufactured SB-MOSFETs show excellent drain induced barrier lowering (DIBL) characteristics due to the existence of Schottky barrier between source and channel. DIBL and subthreshold swing characteristics are compatible with the ultimate scaling limit of double gate MOSFETs which shows the possible application of SB-MOSFETs in nanoscale regime.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.77.1-77.1
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• 2012

Zn 기반 산화물 반도체는 기존의 비정질 Si에 비해 저온공정에도 불구하고 높은 이동도, 투명하다는 장점으로 인해 차세대 디스플레이용 백플레인 소자로 주목받고 있다. 산화물 트랜지스터는 우수한 소자특성을 보여주고 있지만, 온도, 빛, 그리고 게이트 바이어스 스트레스에 의한 문턱전압의 불안정성이 문제의 문제를 해결해야한다. 산화물 반도체의 문턱전압의 불안정성은 유전체와 채널층의 계면 혹은 채널에서의 charge trap, photo-generated carrier, ads-/desorption of molecular 등의 원인으로 보고되고 있어, 고신뢰성의 산화물 채널층을 성장하기 위한 노력이 이루어지고 있다. 최근, 산화물 트랜지스터의 다양한 조건에서의 문턱전압의 불안정성을 해결하기 위해 산화물의 주된 결함으로 일컬어지고 있는 산소결핍을 억제하기 위해 성장공정의 제어 그리고, 산소와의 높은 binding energy를 같은 Al, Hf, Si 등과 같은 원소를 첨가하여 향상된 소자의 특성이 보고되고 있지만, 줄어든 산소공공으로 인해 이동도가 저하되는 문제점이 야기되고 있다. 이러한 문제점을 해결하기 위해, 최근에는 Buried layer의 삽입 혹은 bi-channel 등과 같은 방안들이 제안되고 있다. 본 연구는 atomic layer deposition을 이용하여 AZO bureid layer가 적용된 ZnO 트랜지스터의 특성과 안정성에 대한 연구를 하였다. 다결정 ZnO 채널은 유전체와의 계면에 많은 interface trap density로 인해 positive gate bias stress에 의한 문턱전압의 불안정성을 보였지만, AZO층이 적용된 ZnO 트랜지스터는 줄어든 interface trap density로 인해 향산된 stability를 보였다.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.593-596
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• 1998

Effects of current re-stress after anneal on leakage current and trapped charges in oxides are investigated. Current stress on 6 nm thick oxide has generated mostly positive traps within the oxide resulting in leakage currents. The interface states generated are several orders of magnitude smaller, determined by C-V and charge pumping method. Annealing has eliminated only the charged traps not the neutral traps, thus the leakage current and trap density are increased when the oxides are re-stressed.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.800-803
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• 2002

The MONOS capacitor are fabricated to investigate the carrier trapping due to Fowler-Nordheim tunneling injection. The carrier trapping in scaled multi-dielectric(ONO) depends on the nitride and Op oxide thickness under Fowler_Nordheim tunneling injection. Carriers captured at nitride film could not escape from nitride to gate, but be captured at top oxide and nitride interface traps because of barrier height of top oxide. Therefore, it is expected that the MONOS memory devices using multi dielectric films enhance memory effect and have a long memory retention characteristic.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.334-338
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• 2006

Poly silicon TFT requires high quality dielectric film; conventional method of growing silicon dioxide needs highly hazardous chemicals such as silane. We have grown high quality dielectric film of silicon dioxide using non-hazardous chemical such as TFOS and ozone as reaction gases by APCVD. The films grown were characterized through C-V curves of MOS structures. Conventional APCVD requires high temperature processing where as in the process of current study, we developed a low temperature process. Interface trap density was substantially decreased in the silicon surface coated with the silicon dioxide film after annealing in nitrogen ambient. The interface with such low trap density could be used for poly silicon TFT fabrication with cheaper cost and potentially less hazards.

• Journal of Korean Society for Atmospheric Environment
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• v.12 no.3
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• pp.315-322
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• 1996

Recently, hospital acquired infections have an increase interest as a public problems, which are caused of indoor pollutants in hospital. Microorganisms, ethylene oxide, formaldehyde, and anesthetic gases are main hazardous pollutants in hospital. The possible pathways of the infection are a respiratory channel as well as a blood channel. The blood channel is concerned since these pollutants might be dissolved into the Ringer's solution. The objective of this research was to evaluate the removal efficiencies of adsorption trap for formaldehyde and microorganisms as indoor pollutants which permeated into the Ringer's solution. Dissolved formaldehyde in the solution was increased with the injection dose time. The amount of dissolved formaldehyde was 67.5 $\pm$ 9.5% in Ringer's solution when injection dose time was controlled about 7hrs. An adsorption trap was designed for preventing formaldehyde and microorganisms to be permeated into Ringer's solution. The adsorption trap was packed with 0.4g of active carbon (60/80 mesh) in a sterilized plastic tube (7.79 cm length, 0.46 cm i.d.) and both ends were packed with glass wool. Devised infusion set equipped with the adsorption trap showed 99.9% of removal efficiency for formaldehyde. Microorganism numbers detected on sterilized water for injection and 5% dextrose infusion used in the hospital were 2,695 $\times 10^3$ cells/l and 4,190 $\times 10^3$ cells/l, respectively. Removal efficiency by the adsorption trap was 92.3 $\pm$ 8.5% as for microorgnisms.

• Journal of IKEEE
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• v.18 no.4
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• pp.447-455
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• 2014

In this research, n-based 4H-MOS Capacitor was fabricated with PECVD (plasma enhanced chemical vapor deposition) process for improving SiC/$SiO_2$ interface properties known as main problem of 4H-SiC MOSFET. To overcome the problems of dry oxidation process such as lower growth rate, high interface trap density and low critical electric field of $SiO_2$, PECVD and NO annealing processes are used to MOS Capacitor fabrication. After fabrication, MOS Capacitor's interface properties were measured and evaluated by hi-lo C-V measure, I-V measure and SIMS. As a result of comparing the interface properties with the dry oxidation case, improved interface and oxide properties such as 20% reduced flatband voltage shift, 25% reduced effective oxide charge density, increased oxide breakdown field of 8MV/cm and best effective barrier height of 1.57eV, 69.05% reduced interface trap density in the range of 0.375~0.495eV under the conduction band are observed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.7
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• pp.576-582
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• 2002

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectrics were fabricated, and nitrogen distribution and bonding species which contribute to memory characteristics were analyzed. Also, memory characteristics of devices depending on the anneal temperatures were investigated. The devices were fabricated by retrograde twin well CMOS processes with $0.35\mu m$ design rule. The processes could be simple by in-situ process in growing dielectric. The nitrogen distribution and bonding states of gate dielectrics were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). As the nitridation temperature increased, nitrogen concentration increased linearly, and more time was required to form the same reoxidized layer thickness. ToF-SIMS results showed that SiON species were detected at the initial oxide interface which had formed after NO annealing and $Si_2NO$ species within the reoxidized layer formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. It could be said that nitrogen concentration near initial interface is limited to a certain quantity, so the excess nitrogen is redistributed within reoxidized layer and contribute to electron trap generation.