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http://dx.doi.org/10.4313/JKEM.2006.19.4.334

Passivation of Silicon Oxide Film Deposited at Low Temperature by Annealing in Nitrogen Ambient  

Kim, Jun-Sik (성균관대학교 전자전기공학과)
Chung, Ho-Kyoon ((주)삼성 SDI)
Choi, Byoung-Deog ((주)삼성 SDI)
Lee, Ki-Yong ((주)삼성 SDI)
Yi, Jun-Sin (성균관대학교 전자전기공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.19, no.4, 2006 , pp. 334-338 More about this Journal
Abstract
Poly silicon TFT requires high quality dielectric film; conventional method of growing silicon dioxide needs highly hazardous chemicals such as silane. We have grown high quality dielectric film of silicon dioxide using non-hazardous chemical such as TFOS and ozone as reaction gases by APCVD. The films grown were characterized through C-V curves of MOS structures. Conventional APCVD requires high temperature processing where as in the process of current study, we developed a low temperature process. Interface trap density was substantially decreased in the silicon surface coated with the silicon dioxide film after annealing in nitrogen ambient. The interface with such low trap density could be used for poly silicon TFT fabrication with cheaper cost and potentially less hazards.
Keywords
Nitrogen; Silicon oxide; TEOS; APCVD;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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