• 제목/요약/키워드: Oxide Semiconductor

검색결과 1,423건 처리시간 0.027초

Esculetin을 담지한 ZnO microsphere 외용제의 광노화 차단 상가 효능 (Additive Anti-photoaging Effect of the ZnO Microsphere Soaked with Esculetin)

  • 이창현;한윤봉;정한솔
    • 동의생리병리학회지
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    • 제33권1호
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    • pp.25-30
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    • 2019
  • This study was aimed to examine the synergetic effects of photochemopreventive external agents composed of inorganic ZnO and esculetin. Zinc oxide (ZnO) is widely used in sunblocks because of its excellent biostability and little toxicity. Esculetin derived from Citrus Peel has an anti-oxidative effect. We made the hollow-shaped ZnO microsphere (MS), soaked it with esculetin (EZnO). We used SKH-1 mice to measure the photodamaging effects of UVB. The mice were divided into five groups as follows; UVB nontreated group (N), vehicle (C), esculetin (E), ZnO MS (ZnO), esculetin + ZnO MS(EZno) group. Each group of samples was topically applied to the dorsal skins before the UVB irradiation. The changes of collagen fibers in the skin tissues were observed by H & E staining and Van Gieson staining. The expression of mast cells in skin tissue was observed by immunohistochemical staining of tryptase present in the mast cell granules. Expression of inflammatory cytokines such as TNF-${\alpha}$, IL-$1{\beta}$, and MMP-9, which plays an essential role in wrinkle formation, was measured by RT-PCR. Interestingly, the composition of collagen fibers was better in the EZnO applied group than in the E or ZnO group. Moreover, mast cell expression and the expression of TNF-${\alpha}$, IL-$1{\beta}$, and MMP-9 mRNA were markedly suppressed in the EZnO group, indicating that the synergetic effects of esculetin and ZnO were excellent.

초음파-수열합성 적용 가시광 활성 일차원 금속산화물 도핑 반도체 나노소재를 이용한 방향족 휘발성 탄화수소 제어효율 평가 (Evaluation of Oxidation Efficiency of Aromatic Volatile Hydrocarbons using Visible-light-activated One-Dimensional Metal Oxide Doping Semiconductor Nanomaterials prepared by Ultrasonic-assisted Hydrothermal Synthesis)

  • 조완근;신승호;최정학;이준엽
    • 한국환경과학회지
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    • 제27권11호
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    • pp.967-974
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    • 2018
  • In this study, we evaluated the photocatalytic oxidation efficiency of aromatic volatile hydrocarbons by using $WO_3$-doped $TiO_2$ nanotubes (WTNTs) under visible-light irradiation. One-dimensional WTNTs were synthesized by ultrasonic-assisted hydrothermal method and impregnation. XRD analysis revealed successful incorporation of $WO_3$ into $TiO_2$ nanotube (TNT) structures. UV-Vis spectra exhibited that the synthesized WTNT samples can be activated under visible light irradiation. FE-SEM and TEM images showed the one-dimensional structure of the prepared TNTs and WTNTs. The photocatalytic oxidation efficiencies of toluene, ethylbenzene, and o-xylene were higher using WTNT samples than undoped TNT. These results were explained based on the charge separation ability, adsorption capability, and light absorption of the sample photocatalysts. Among the different light sources, light-emitting-diodes (LEDs) are more highly energy-efficient than 8-W daylight used for the photocatalytic oxidation of toluene, ethylbenzene, and o-xylene, though the photocatalytic oxidation efficiency is higher for 8-W daylight.

산화구리의 광전기화학적 거동 특성 (Photoelectrochemical Behavior of Cu2O and Its Passivation Effect)

  • 윤홍관;홍순현;김도진;김천중
    • 한국재료학회지
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    • 제29권1호
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    • pp.1-6
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    • 2019
  • Recent industrialization has led to a high demand for the use of fossil fuels. Therefore, the need for producing hydrogen and its utilization is essential for a sustainable society. For an eco-friendly future technology, photoelectrochemical water splitting using solar energy has proven promising amongst many other candidates. With this technique, semiconductors can be used as photocatalysts to generate electrons by light absorption, resulting in the reduction of hydrogen ions. The photocatalysts must be chemically stable, economically inexpensive and be able to utilize a wide range of light. From this perspective, cuprous oxide($Cu_2O$) is a promising p-type semiconductor because of its appropriate band gap. However, a major hindrance to the use of $Cu_2O$ is its instability at the potential in which hydrogen ion is reduced. In this study, gold is used as a bottom electrode during electrodeposition to obtain a preferential growth along the (111) plane of $Cu_2O$ while imperfections of the $Cu_2O$ thin films are removed. This study investigates the photoelectrochemical properties of $Cu_2O$. However, severe photo-induced corrosion impedes the use of $Cu_2O$ as a photoelectrode. Two candidates, $TiO_2$ and $SnO_2$, are selected for the passivation layer on $Cu_2O$ by by considering the Pourbaix-diagram. $TiO_2$ and $SnO_2$ passivation layers are deposited by atomic layer deposition(ALD) and a sputtering process, respectively. The investigation of the photoelectrochemical properties confirmed that $SnO_2$ is a good passivation layer for $Cu_2O$.

수경배양액 무기성분농도 측정장치 개발 (Equipment Development for Inorganic-Compound Concentration Measurement in a Hydroponic Culture Solution)

  • 허정욱;박경훈;홍승길;이재수;백정현;박종택;이승기
    • 한국환경농학회지
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    • 제39권4호
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    • pp.319-326
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    • 2020
  • BACKGROUND: Measurement equipment was developed for inorganic nutrient concentration inside the hydroponic culture medium with several macro- and micro compositions, and applied for measuring the compositions of conventional medium. METHODS AND RESULTS: Before the equipment development, sonicator and heater were utilized to control temperature around of the module mixing with color reagents and target samples among the inorganic compositions. The measurement module and multi-sampler were also manufactured based on the COMS (Complementary Metal-Oxide Semiconductor) and installed inside the measurement equipment. Concentration of standard solution, value measured by the equipment, standard deviation or measured average value were used for estimating the accuracy and average recall of the equipment. Yamazaki solutions with EC of 0.5, 1.5, and 2.5 dS/m were offered to confirm the equipment accuracy and standard error. CONCLUSION: It was suggested that the developed equipment could be automatically applied for measurement with accuracy of over 96% and standard errors of less than 5% on 12 macro- and micro compositions such as a NO3-N, PO43- or Fe.

Characteristics of radiographic images acquired with CdTe, CCD and CMOS detectors in skull radiography

  • Queiroz, Polyane Mazucatto;Santaella, Gustavo Machado;Lopes, Sergio Lucio Pereira de Castro;Haiter-Neto, Francisco;Freitas, Deborah Queiroz
    • Imaging Science in Dentistry
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    • 제50권4호
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    • pp.339-346
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    • 2020
  • Purpose: The purpose of this study was to evaluate the image quality, diagnostic efficacy, and radiation dose associated with the use of a cadmium telluride (CdTe) detector, compared to charge-coupled device (CCD) and complementary metal oxide semiconductor(CMOS) detectors. Materials and Methods: Lateral cephalographs of a phantom (type 1) composed of synthetic polymer filled with water and another phantom (type 2) composed of human skull macerated with polymer coating were obtained with CdTe, CCD, and CMOS detectors. Dosimeters placed on the type 2 phantom were used to measure radiation. Noise levels from each image were also measured. McNamara cephalometric analysis was conducted, the dentoskeletal configurations were assessed, and a subjective evaluation of image quality was conducted. Parametric data were compared via 1-way analysis of variance with the Tukey post-hoc test, with a significance level of 5%. Subjective image quality and dentoskeletal configuration were described qualitatively. Results: A statistically significant difference was found among the images obtained with the 3 detectors(P<0.05), with the lowest noise level observed among the images obtained with the CdTe detector and a higher subjective preference demonstrated for those images. For the cephalometric analyses, no significant difference (P>0.05) was observed, and perfect agreement was seen with regard to the classifications obtained from the images acquired using the 3 detectors. The radiation dose associated with the CMOS detector was higher than the doses associated with the CCD (P<0.05) and CdTe detectors(P<0.05). Conclusion: Considering the evaluated parameters, the CdTe detector is recommended for use in clinical practice.

Optimization of the Pt Nanoparticle Size and Calcination Temperature for Enhanced Sensing Performance of Pt-Decorated In2O3 Nanorods

  • Choi, Seung-Bok;Lee, Jae Kyung;Lee, Woo Seok;Ko, Tae Gyung;Lee, Chongmu
    • Journal of the Korean Physical Society
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    • 제73권10호
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    • pp.1444-1451
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    • 2018
  • The surface-to-volume ratio of one-dimensional (1D) semiconductor metal-oxide sensors is an important factor for achieving good gas sensing properties because it offers a wide response area. To exploit this effect, in this study, we determined the optimal calcination temperature to maximize the specific surface area and thereby the sensitivity of the sensor. The $In_2O_3$ nanorods were synthesized by using vapor-liquid-solid growth of $In_2O_3$ powders and were decorated with the Pt nanoparticles by using a sol-gel method. Subsequently, the Pt nanoparticle-decorated $In_2O_3$ nanorods were calcined at different temperatures to determine the optimal calcination temperature. The $NO_2$ gas sensing properties of five different samples (pristine uncalcined $In_2O_3$ nanorods, Pt-decorated uncalcined $In_2O_3$ nanorods, and Pt-decorated $In_2O_3$ nanorods calcined at 400, 600, and $800^{\circ}C$) were determined and compared. The Pt-decorated $In_2O_3$ nanorods calcined at $600^{\circ}C$ showed the highest surface-to-volume ratio and the strongest response to $NO_2$ gas. Moreover, these nanorods showed the shortest response/recovery times toward $NO_2$. These enhanced sensing properties are attributed to a combination of increased surface-to-volume ratio (achieved through the optimal calcination) and increased electrical/chemical sensitization (provided by the noble-metal decoration).

High-k HfO2와 HfO2/Al2O3/HfO2 적층막의 구조 안정성 및 전하 트랩핑 특성 연구 (Study on the Structural Stability and Charge Trapping Properties of High-k HfO2 and HFO2/Al2O3/HfO2 Stacks)

  • 안영수;허민영;강해윤;손현철
    • 대한금속재료학회지
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    • 제48권3호
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    • pp.256-261
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    • 2010
  • In this work, high-k dielectric stacks of $HfO_2$ and $HfO_2$/$Al_2O_3$/$HfO_2$ (HAH) were deposited on $SiO_2/Si$ substrates by atomic layer deposition as charge trapping layers in charge trapping devices. The structural stability and the charge trapping characteristics of such stacks were investigated using Metal-Alumina-Hafnia-Oxide-Silicon (MAHOS) structure. The surface roughness of $HfO_2$ was stable up to 11 nm with the insertion of 0.2 nm thick $Al_2O_3$. The effect of the thickness of the HAH stack and the thickness of intermediate $Al_2O_3$ on charge trapping characteristics were investigated for MAHOS structure under various gate bias pulse with duration of 100 ms. The threshold voltage shift after programming and erase showed that the memory window was increased with increasing bias on gate. However, the programming window was independent of the thickness of HAH charge trapping layers. When the thickness of $Al_2O_3$insertion increased from 0.2 nm to 1 nm, the erase window was decreased without change in the programming window.

Development and Evaluation of a Thimble-Like Head Bolus Shield for Hemi-Body Electron Beam Irradiation Technique

  • Shin, Wook-Geun;Lee, Sung Young;Jin, Hyeongmin;Kim, Jeongho;Kang, Seonghee;Kim, Jung-in;Jung, Seongmoon
    • Journal of Radiation Protection and Research
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    • 제47권3호
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    • pp.152-157
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    • 2022
  • Background: The hemi-body electron beam irradiation (HBIe-) technique has been proposed for the treatment of mycosis fungoides. It spares healthy skin using an electron shield. However, shielding electrons is complicated owing to electron scattering effects. In this study, we developed a thimble-like head bolus shield that surrounds the patient's entire head to prevent irradiation of the head during HBIe-. Materials and Methods: The feasibility of a thimble-like head bolus shield was evaluated using a simplified Geant4 Monte Carlo (MC) simulation. Subsequently, the head bolus was manufactured using a three-dimensional (3D) printed mold and Ecoflex 00-30 silicone. The fabricated head bolus was experimentally validated by measuring the dose to the Rando phantom using a metal-oxide-semiconductor field-effect transistor (MOSFET) detector with clinical configuration of HBIe-. Results and Discussion: The thimble-like head bolus reduced the electron fluence by 2% compared with that without a shield in the MC simulations. In addition, an improvement in fluence degradation outside the head shield was observed. In the experimental validation using the inhouse-developed bolus shield, this head bolus reduced the electron dose to approximately 2.5% of the prescribed dose. Conclusion: A thimble-like head bolus shield for the HBIe- technique was developed and validated in this study. This bolus effectively spares healthy skin without underdosage in the region of the target skin in HBIe-.

열처리 효과에 따른 SnO2 기반 수소가스 센서의 특성 최적화 (Optimization of SnO2 Based H2 Gas Sensor Along with Thermal Treatment Effect)

  • 정동건;이준엽;권진범;맹보희;김영삼;양이준;정대웅
    • 센서학회지
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    • 제31권5호
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    • pp.348-352
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    • 2022
  • Hydrogen gas (H2) which is odorless, colorless is attracting attention as a renewable energy source in varions applications but its leakage can lead to disastrous disasters, such as inflammable, explosive, and narcotic disasters at high concentrations. Therefore, it is necessary to develop H2 gas sensor with high performance. In this paper, we confirmed that H2 gas detection ability of SnO2 based H2 gas sensor along with thermal treatment effect of SnO2. Proposed SnO2 based H2 gas sensor is fabricated by MEMS technologies such as photolithgraphy, sputtering and lift-off process, etc. Deposited SnO2 thin films are thermally treated in various thermal treatement temperature in range of 500-900 ℃ and their H2 gas detection ability is estimatied by measuring output current of H2 gas sensor. Based on experimental results, fabricated H2 gas sensor with SnO2 thin film which is thermally treated at 700 ℃ has a superior H2 gas detection ability, and it can be expected to utilize at the practical applications.

PEALD를 이용한 HfO2 유전박막의 Al 도핑 효과 연구 (Study of Al Doping Effect on HfO2 Dielectric Thin Film Using PEALD)

  • 오민정;송지나;강슬기;김보중;윤창번
    • 한국전기전자재료학회논문지
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    • 제36권2호
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    • pp.125-128
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    • 2023
  • Recently, as the process of the MOS device becomes more detailed, and the degree of integration thereof increases, many problems such as leakage current due to an increase in electron tunneling due to the thickness of SiO2 used as a gate oxide have occurred. In order to overcome the limitation of SiO2, many studies have been conducted on HfO2 that has a thermodynamic stability with silicon during processing, has a higher dielectric constant than SiO2, and has an appropriate band gap. In this study, HfO2, which is attracting attention in various fields, was doped with Al and the change in properties according to its concentration was studied. Al-doped HfO2 thin film was deposited using Plasma Enhanced Atomic Layer Deposition (PEALD), and the structural and electrical characteristics of the fabricated MIM device were evaluated. The results of this study are expected to make an essential cornerstone in the future field of next-generation semiconductor device materials.