• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.11a
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• pp.146-150
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• 2001

Microwave model and high-frequency measurement of the ACF flip-chip interconnection was investigated using a microwave network analysis. S-parameters of on-chip and substrate were separately measured in the frequency range of 200 MHz to 20 GHz using a microwave network analyzer HP8510 and cascade probe. And the cascade transmission matrix conversion was performed. The same measurements and conversion techniques were conducted on the assembled test chip and substrate at the same frequency range. Then impedance values in ACF flip-chip interconnection were extracted from cascade transmission matrix. ACF flip chip interconnection has only below 0.1nH, and very stable up to 13 GHz. Over the 13 GHz, there was significant loss because of epoxy capacitance of ACF. However, the addition of SiO$_2$filler to the ACF lowered the dielectric constant of the ACF materials resulting in an increase of resonance frequency up to 15 GHz. High frequency behavior of metal Au stud bumps was investigated. The resonance frequency of the metal stud bump interconnects is higher than that of ACF flip-chip interconnects and is not observed at the microwave frequency band. The extracted model parameters of adhesive flip chip interconnects were analyzed with the considerations of the characteristics of material and the design guideline of ACA flip chip for high frequency applications was provided.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.9
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• pp.25-32
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• 2009

Recently, research for Network-on-chip(NoC) is progressing. However, due to the increase of system complexity and demand on high performance, conventional copper-based electrical interconnect would be faced with the design limitation of performance, power, and bandwidth. As an alternative to these problems, combined use of Electrical Interconnects(EIs) and Optical Interconnects(OIs) has been introduced. In this paper we propose efficient routing optimization strategy and hybrid switch architecture, which use OIs for critical path and EIs for non-critical path. The proposed method shows up to 25% performance improvement and 38% power reduction.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.4
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• pp.255-261
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• 2005

With the advent of sub-90nm technologies, the system-on-chip (SoC) and system-in-package (SiP) are becoming the trend in delivering low-cost, low-power, and small-form-factor consumer electronic systems running at multiple GHz. The shortened transistor channel length reduces the transistor switching cycles to the range of several picoseconds, yet the time-of-flights of the critical on-chip and off-chip interconnects are in the range of 10 picoseconds for 1.5mm-long wires and 100 picoseconds for 15mm-long wires. Designers realize the bottleneck today often lies at chip-to-chip interconnects and the industry needs a good model to compute the inductance in these parts of circuits. In this paper we propose a new method for extracting accurate equivalent inductance circuit models for SPICE-level circuit simulations of system-on-chip (SoC) and system-in-package (SiP) designs. In our method, geometrical meshes are created and numerical methods are used to find the solutions for the electromagnetic fields over the fine meshes. In this way, multiple-GHz SoC and SiP designers can use accurate inductance modeling and interconnect optimization to achieve high yields.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.2
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• pp.168-174
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• 2012

This paper describes a novel global on-chip interconnect scheme, in which a one UI-delayed symbol as well as the current symbol is sent for easing the sensing operation at receiver end. With this approach, the voltage swing on the channel for reliable sensing can be reduced, resulting in performance improvement in terms of power consumption, peak current, and delay spread due to PVT variations, as compared to the conventional repeater insertion schemes. Evaluation for on-chip interconnects having various lengths in a 130 nm CMOS process indicated that the proposed on-chip interconnect scheme achieved a power reduction of up to 71.3%. The peak current during data transmission and the delay spread due to PVT variations were also reduced by as much as 52.1% and 65.3%, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.3
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• pp.53-57
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• 2011

In the modern packaging technologies highly condensed metal interconnects are typically formed by highcost processes. These methods inevitably require the precise controls of mutually dependant process parameters, which usually cause the difficulty of the change in the layout design for interconnects of chip to-chip, or chip-to-substrate. In order to overcome these problems, the unique concept and methodology of self-assembly even in micro-meter scale were developed. In this report we focus on the factors which influenced the self-formed bumps by analyzing the phenomenon experimentally. In case of RMA flux, homogenous pattern was obtained in both plain surface and cross-section surface observation. By using RA flux, the phenomena were accelerated although the self-formtion results was inhomogenous. With ussage of moderate RA flux, reaction rate of the self-formation was accelerated with homogeneous pattern.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.1
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• pp.1-6
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• 2002

A new closed-form expressions to calculate frequency-dependent distributed inductance and the associated distributed series resistance of single interconnect on a lossy silicon substrate (CMOS technology) are presented. The proposed analytic model for series impedance is based on a self-consistent field method and the vector magnetic potential equation. It is shown that the calculated frequency-dependent distributed inductance and the associated resistance are in good agreement with the results obtained from rigorous full wave solutions and CAD-oriented equivalent-circuit modeling approach.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.2
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• pp.77-83
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• 2004

Cross-talk noise which can occur between on-chip interconnects is significant factor which influence signal integrity. Therefore, this paper presents an analytical method for estimating maximum cross-talk noise. We consider inductance effect of interconnects and use arbitary ramp inputs to estimate noise magnitude exactly. Also, we have used a virtual source for the easy of analytically caculating maximum cross-talk noise from complex cross-talk noise model. The accuracy of the has been shown that be within 4.3 percent maximum relative error compared with the results of HSPICE simulation. Hence, this study can be utilized in various CAD tools for guaranteeing signal integrity.

• ETRI Journal
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• v.33 no.5
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• pp.822-825
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• 2011

Level-encoded dual-rail (LEDR) has been widely used in onchip asynchronous interconnects supporting a 2-phase handshake protocol. However, it inevitably requires 2N wires for N-bit data transfers. Encoder and decoder circuits that perform an asynchronous 2-phase handshake protocol with only N wires for N-bit data transfers are presented for on-chip global interconnects. Their fundamentals are based on a ternary encoding scheme using current-mode multiple valued logics. Using 0.25 ${\mu}m$ CMOS technologies, the maximum reduction ratio of the proposed circuits, compared with LEDR in terms of power-delay product, was measured as 39.5% at a wire length of 10 mm and data rate of 100 MHz.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.8
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• pp.1406-1415
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• 2010

As process technology for semiconductor goes beyond the ultra-deep submicrometer regime, interconnect reliability on a chip has become a serious design concern. As process parameters scale, interconnect widths are reduced rapidly while the current flowing through the interconnect does not decrease in a proportional manner. This trend increases current densities in metal interconnects which may lead to poor reliability for electromigration. Hence, it is critical to estimate the current amount passing through the interconnects earlier in semiconductor design stages. The purpose of this paper is to propose a fast yet accurate current estimation technique that can offer not only analysis time equivalent to those offered by the previous approximation methods but also a relatively precise estimation by using closed-form equations. The accuracy of the proposed technique was confirmed to be about 8 times better on average when compared to the previous work.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.5
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• pp.13-26
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• 1999

This paper presents a metric that can guide to optimal circuit models for interconnects among various models, given interconnect parameters and operating environment. To get this goal, we categorize interconnects into RC~c1ass and RLC-c1ass model domains based on the quantitative modeling error analysis using total resistance, inductance and capacitance of interconnects as well as operating frequency. RC~c1ass circuit models, which include most on~chip interconnects, can be efficiently analyzed by using the model~order reduction techniques. RLC-c1ass circuit models are constructed using one of three candidates, ILC(Iterative Ladder Circuit) macromodels, MC(Method of Characteristics) macromodels, and state-based convolution method, the selection process of which is based upon the allowable modeling error and electrical parameters of interconnects. We propose the model domain diagram leading to optimal circuit models and the division of model domains has been achieved considering the simulation cost of macromodels under the environmental assumption of the general purpose circuit simulator such as SPICE. The macromodeling method presented in this paper keeps the passivity of the original interconnects and accordingly guarantees the unconditional stability of circuit models.