JSTS:Journal of Semiconductor Technology and Science

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Accurate Formulas for Frequency-Dependent Resistance and Inductance Per Unit Length of On-Chip Interconnects on Lossy Silicon Substrate

  • Ymeri, H. (Katholieke Universiteit Leuven, Department of Electrical Engineering(ESAT)) ;
  • Nauwelaers, B. (Katholieke Universiteit Leuven, Department of Electrical Engineering(ESAT)) ;
  • Maex, K. (The Interuniversity Microelectronics Center(IMEC)) ;
  • Roest, D.De (The Interuniversity Microelectronics Center(IMEC)) ;
  • Vandenberghe, S. (Katholieke Universiteit Leuven, Department of Electrical Engineering(ESAT)) ;
  • Stucchi, M. (The Interuniversity Microelectronics Center(IMEC))
  • Published : 2002.03.01
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Abstract

A new closed-form expressions to calculate frequency-dependent distributed inductance and the associated distributed series resistance of single interconnect on a lossy silicon substrate (CMOS technology) are presented. The proposed analytic model for series impedance is based on a self-consistent field method and the vector magnetic potential equation. It is shown that the calculated frequency-dependent distributed inductance and the associated resistance are in good agreement with the results obtained from rigorous full wave solutions and CAD-oriented equivalent-circuit modeling approach.

Keywords

References

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