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Accurate Formulas for Frequency-Dependent Resistance and Inductance Per Unit Length of On-Chip Interconnects on Lossy Silicon Substrate  

Ymeri, H. (Katholieke Universiteit Leuven, Department of Electrical Engineering(ESAT))
Nauwelaers, B. (Katholieke Universiteit Leuven, Department of Electrical Engineering(ESAT))
Maex, K. (The Interuniversity Microelectronics Center(IMEC))
Roest, D.De (The Interuniversity Microelectronics Center(IMEC))
Vandenberghe, S. (Katholieke Universiteit Leuven, Department of Electrical Engineering(ESAT))
Stucchi, M. (The Interuniversity Microelectronics Center(IMEC))
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.2, no.1, 2002 , pp. 1-6 More about this Journal
Abstract
A new closed-form expressions to calculate frequency-dependent distributed inductance and the associated distributed series resistance of single interconnect on a lossy silicon substrate (CMOS technology) are presented. The proposed analytic model for series impedance is based on a self-consistent field method and the vector magnetic potential equation. It is shown that the calculated frequency-dependent distributed inductance and the associated resistance are in good agreement with the results obtained from rigorous full wave solutions and CAD-oriented equivalent-circuit modeling approach.
Keywords
On-chip interconnects; MIS microstrip; self-consistent method; quasi-magnetostatic; procedure; skin effect;
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