• Journal of Advanced Marine Engineering and Technology
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• v.31 no.4
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• pp.410-416
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• 2007

PRAM (Phase change random access memory) is one of the most promising candidates for next generation non-volatile memories. However, the high reset current is one major obstacle to develop a high density PRAM. One way of the reset current reduction is to change the heater electrode material. In this paper, to reduce the reset current for phase transition, we have investigated the effect of heater electrode material parameters using finite element analysis. From the simulation. the reset current of PRAM cell is reduced from 2.0 mA to 0.72 mA as the electrical conductivity of heater is decreased from $1.0{\times}10^6\;(1/{\Omega}{\cdot}m$) to $1.0{\times}10^4\;(1/{\Omega}{\cdot}m$). As the thermal conductivity of heater is decreased, the reset current is slightly reduced. But the reset current of PRAM cell is not changed as the specific heat of heater is changed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.484-490
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• 2017

We investigated the rewritable operation of a non-volatile memory device composed of Al (top)/$TiO_2$/indium-zinc-oxide (IZO)/Al (bottom). The oxygen-deficient IZO layer of the device was spin-coated with 0.1 M indium nitrate hydrate and 0.1 M zinc acetate dehydrate as precursor solutions, and the $TiO_2$ layer was fabricated by atomic layer deposition. The oxygen vacancies IZO layer of an active component annealed at $400^{\circ}C$ using thermal annealing and it was proven to be in oxygen vacancies and oxygen binding environments with OH species and heavy metal ions investigated by X-ray photoelectron spectroscopy. The device, which operates at low voltages (less than 3.5 V), exhibits non-volatile memory behavior consistent with resistive-switching properties and an ON/OFF ratio of approximately $3.6{\times}10^3$ at 2.5 V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.124-125
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• 2008

The charge trapping and tunnelling characteristics with various thickness of $Si_3N_4$ layer were investigated for application of TBE (Tunnel Barrier Engineered) non-volatile memory. We confirmed that the critical thickness of no charge trapping was existed with decreasing $Si_3N_4$ thickness. Also, the charge trap centroid x and charge trap density were extracted by using CCS (Constant Current Stress) method. Through the optimized thickness of $Si_3N_4$ layer, it can be improve the performance of non-volatile memory.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.2
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• pp.87-89
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• 2006

This paper proposes a sense amplifier with non-volatile memory in order to improve the image quality of LCD by enhancing the matching of the driving voltages between the panel and driver. The sense amplifier having a wide sensing margin and fast response adjusts LCD driver voltage of display driver. The CSTN-LCD with the sense amplifier results improved image quality than that with conventional 6 bit column driver without it.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.128-129
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• 2005

In this research, non-volatile memory effects and nano-crystal creation have been investigated in SiNx containing Si nano-crystals (Si-nc) produced by ICP-CVD and rapid thermal annealing. The quantum dots were created during rapid thermal annealing of Si-rich SiNx thin films. The quantum dot creation was analyzed with photoluminescence spectra, and in case of Si-rich SiNx, it is conformed that the quantum dots are formed easily at 750$\sim$800nm wavelength.

• Proceedings of the Korean Society of Computer Information Conference
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• 2017.07a
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• pp.131-132
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• 2017

본 연구에서는 열처리 온도에 따른 전도 특성을 조사하기 위하여 RF magnetron sputtering을 이용해서 Si기판 위에 SBN 박막을 증착시킨 후, SBN 박막에 $650{\sim}800[^{\circ}C]$의 온도 범위에서 열처리를 하였다. $650[^{\circ}C]$에서 열처리된 박막의 경우 표면 거칠기는 약 0.42[nm]로 나타났으며, -5~+5[V]의 전압 범위에서 누설전류밀도는 $10-5[A/cm^2]$ 이하로 안정된 값을 나타내었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.60-61
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• 2007

In this paper, the p-channel poly Si thin-film transistors (Poly-Si TFT's) using formed by solid phase crystallization (SPC) on glass substrate were fabricated. And we propose an ONO(Oxide-Nitride-Oxide) multilayer as the gate insulator for poly-Si TFT's to indicate non-volatile memory (NVM) effect. Poly-Si TFT is investigated by measuring the electrical properties of poly-Si films, such as I-V characteristics, on/off current ratio. NVM characteristics is showed by measuring the threshold voltage change of TFT through I-V characteristics.

• Journal of Information Technology Services
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• v.18 no.1
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• pp.79-90
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• 2019

Maximizing energy efficiency minimizes the energy consumption of computation, storage and communications required for IT services, resulting in economic and environmental benefits. Recent advancement of flash and next generation non-volatile memory technology and price decrease of those memories have led to the rise of so-called AFA (All-Flash Array) storage devices made of flash or next generation non-volatile memory. Currently, the AFA devices are rapidly replacing traditional storages in the high-performance servers due to their fast input/output characteristics. However, it is not well known how effective the energy efficiency of the AFA devices in the real world. This paper shows input/output performance and power consumption of the AFA devices measured on the Linux XFS file system via experiments and discusses energy efficiency of the AFA devices in the real world.

• Proceedings of the Korean Ceranic Society Conference
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• 2004.10a
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• pp.79.1-79.1
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• 2004

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.129.2-129.2
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• 2000