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http://dx.doi.org/10.4313/JKEM.2017.30.8.484

Electrical Characteristics of Resistive-Switching-Memory Based on Indium-Zinc-Oxide Thin-Film by Solution Processing  

Kim, Han-Sang (College of Electrical and Computer Engineering, Chungbuk National University)
Kim, Sung-Jin (College of Electrical and Computer Engineering, Chungbuk National University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.30, no.8, 2017 , pp. 484-490 More about this Journal
Abstract
We investigated the rewritable operation of a non-volatile memory device composed of Al (top)/$TiO_2$/indium-zinc-oxide (IZO)/Al (bottom). The oxygen-deficient IZO layer of the device was spin-coated with 0.1 M indium nitrate hydrate and 0.1 M zinc acetate dehydrate as precursor solutions, and the $TiO_2$ layer was fabricated by atomic layer deposition. The oxygen vacancies IZO layer of an active component annealed at $400^{\circ}C$ using thermal annealing and it was proven to be in oxygen vacancies and oxygen binding environments with OH species and heavy metal ions investigated by X-ray photoelectron spectroscopy. The device, which operates at low voltages (less than 3.5 V), exhibits non-volatile memory behavior consistent with resistive-switching properties and an ON/OFF ratio of approximately $3.6{\times}10^3$ at 2.5 V.
Keywords
Thin films; Sol-gel; Electrical properties; Electrical; IZO resistive random access memory;
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