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http://dx.doi.org/10.5916/jkosme.2007.31.4.410

Electromagnetic and Thermal Analysis of Phase Change Memory Device with Heater Electrode  

Jang, Nak-Won (한국해양대학교 전기전자공학부)
Mah, Suk-Bum (용인송담대학교 조명인테리어과)
Kim, Hong-Seung (한국해양대학교 나노데이타 시스템학부)
Abstract
PRAM (Phase change random access memory) is one of the most promising candidates for next generation non-volatile memories. However, the high reset current is one major obstacle to develop a high density PRAM. One way of the reset current reduction is to change the heater electrode material. In this paper, to reduce the reset current for phase transition, we have investigated the effect of heater electrode material parameters using finite element analysis. From the simulation. the reset current of PRAM cell is reduced from 2.0 mA to 0.72 mA as the electrical conductivity of heater is decreased from $1.0{\times}10^6\;(1/{\Omega}{\cdot}m$) to $1.0{\times}10^4\;(1/{\Omega}{\cdot}m$). As the thermal conductivity of heater is decreased, the reset current is slightly reduced. But the reset current of PRAM cell is not changed as the specific heat of heater is changed.
Keywords
Phase change random access memory; Non-volatile memory; Heater electrode; Electrical conductivity; Thermal conductivity;
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