• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.334-338
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• 2006

Poly silicon TFT requires high quality dielectric film; conventional method of growing silicon dioxide needs highly hazardous chemicals such as silane. We have grown high quality dielectric film of silicon dioxide using non-hazardous chemical such as TFOS and ozone as reaction gases by APCVD. The films grown were characterized through C-V curves of MOS structures. Conventional APCVD requires high temperature processing where as in the process of current study, we developed a low temperature process. Interface trap density was substantially decreased in the silicon surface coated with the silicon dioxide film after annealing in nitrogen ambient. The interface with such low trap density could be used for poly silicon TFT fabrication with cheaper cost and potentially less hazards.

• Korean Journal of Materials Research
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• v.12 no.9
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• pp.724-728
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• 2002

Inductively-coupled $N_2$O plasma was utilized to grow silicon dioxide at low temperature and applied to fabricate polycrystalline-silicon thin film transistors. At $400^{\circ}C$, the thickness of oxide was limited to 5nm and the oxide contained Si≡N and ≡Si-N-Si≡ bonds. The nitrogen incorporation improved breakdown field to 10MV/cm and reduced the interface charge density to $1.52$\times$10^{11}$ $cm^2$ with negative charge. The $N_2$O plasma gate oxide enhanced the field effect mobility of polycrystalline thin film transistor, compared to $O_2$ plasma gate oxide, due to the reduced interface charge at the $Si/SiO_2$ interface and also due to the reduced trap density at Si grain boundaries by nitrogen passivation.

• The Journal of Engineering Research
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• v.2 no.1
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• pp.147-149
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• 1997

Nirogen dioxide is rapidly converted to nitric oxide by the water absortbed on a Linde Molecular Sieve column. The resultant wave form is indistinguishable from that of pure nitric oxide introduced to the column. Thus, by conversion to the low boiling nitric oxide, the complication of oxidation of organic partitioning liquids is obviated.

• Journal of the Korean Society of Industry Convergence
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• v.6 no.4
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• pp.277-289
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• 2003

This study proposes a mathematical model to characterize the removal of nitrogen oxides in a dielectric barrier discharge plasma process. As well as the reactions between nitrogen oxides, water vapor, oxygen and nitrogen, the model takes into account the effect of ethylene often used as a chemical additive to reduce the power consumption of the process on the removal of nitrogen oxides. Since the concentrations of the radicals concerned in the main reactions including O, OH, H and N should be calculated to predict the removal efficiency of nitrogen oxides, they were theoretically derived. The parameters affecting the removal of nitrogen oxides, such as initial concentration, discharge power, humidity, and ethylene concentration were experimentally evaluated, which were compared with the calculated results to verify the validity of the model proposed. The predicted concentrations of several byproducts formed in this process were also presented and discussed. The effects of several parameters mentioned above on the removal of nitrogen oxides were reasonable described by the proposed model.

• Clean Technology
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• v.26 no.4
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• pp.304-310
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• 2020

In order to apply a photocatalyst (TiO2) to various building materials, TiO2-mayenite was prepared in this study. The TiO2 was synthesized using the sol-gel method by fixing titanium isopropoxide (TTIP) and urea at a ratio of 1 : 1. Later, they were calcined in a temperature range of 400-700 ℃ to analyze the properties according to temperature. BET, TGA, and XRD were used to analyze the physical and chemical properties of TiO2. The nitrogen oxide removal test was confirmed by measuring the change in the concentration of NO for 1 h according to KS L ISO 22197-1. The prepared TiO2 samples exhibited an anatase crystal structure below 600 ℃, and TiO2 (urea)-400 showed the highest nitrogen oxide removal rate at 2.35 µmol h-1. TiO2-mayenite was prepared using two methods: spraying TiO2 dispersion solution (s/s) and sol-gel solution (g/s). Through BET and XRD analysis, it was found that 5-TiO2 (g/s) prepared by spraying a sol-gel solution has maintained its crystallinity even after heat treatment. Also, 5-TiO2 (g/s)-500 showed the highest removal rate of 0.55 µmol h-1 in the nitrogen oxide removal test. To prepare TiO2-mayenite, it was confirmed that mayenite should be blended with TiO2 in a sol-gel state to maintain the crystal structure and exhibit a high nitrogen oxide removal rate.

• Proceedings of the Korea Air Pollution Research Association Conference
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• 2008.10a
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• pp.205-207
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• 2008

• Proceedings of the Korean Society of Tobacco Science Conference
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• 2004.10a
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• pp.18-18
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• 2004

• Journal of the Korean Vacuum Society
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• v.19 no.1
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• pp.14-21
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• 2010

Ge is one of the attractive channel materials for the next generation high speed metal oxide semiconductor field effect transistors (MOSFETs) due to its higher carrier mobility than Si. But the absence of a chemically stable thermal oxide has been the main obstacle hindering the use of Ge channels in MOS devices. Especially, the fabrication of gate oxide on Ge with high quality interface is essential requirement. In this study, $HfO_xN_y$ thin films were prepared by plasma-enhanced atomic layer deposition on Ge substrate. The nitrogen was incorporated in situ during PE-ALD by using the mixture of nitrogen and oxygen plasma as a reactant. The effects of nitrogen to oxygen gas ratio were studied focusing on the improvements on the electrical and interface properties. When the nitrogen to oxygen gas flow ratio was 1, we obtained good quality with 10% EOT reduction. Additional analysis techniques including X-ray photoemission spectroscopy and high resolution transmission electron microscopy were used for chemical and microstructural analysis.

• Journal of Advanced Marine Engineering and Technology
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• v.38 no.9
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• pp.1045-1050
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• 2014

$N_2O$(Nitrous Oxide) is known as the third major GHG(Green House Gas) following $CO_2$(Carbon Oxide) and $CH_4$(Methane). The GWP(Global Warming Potential) factor of $N_2O$ is 310 times as large as that of $CO_2$ because $N_2O$ in the atmosphere is very stable, and it becomes a source of secondary contamination after photo-degradation in the stratosphere. Investigation on the cause of the $N_2O$ formation have been continuously reported by several researchers on power sources with continuous combustion form, such as a boiler. However, in the diesel engine, research on $N_2O$ generation which has effected from fuel components has not been conducted. Therefore, in this research, author has investigated about $N_2O$ emission rates which was changed by nitrogen and sulfur concentration in fuel on the diesel engine. The test engine was a 4-stroke direct injection diesel engine with maximum output of 12 kW at 2600rpm, and operating condition of that was set up at a 75% load. Nitrogen and sulfur concentrations in fuel were raised by using six additives : nitrogen additives were Pyridine, Indole, Quinoline, Pyrrol and Propionitrile and sulfur additive was Di-tert-butyl-disulfide. In conclusion, diesel fuels containing nitrogen elements less than 0.5% did not affect $N_2O$ emissions in the all concentrations and kinds of the additive agent in the fuel. However, increasing of the sulfur additive in fuel increased $N_2O$ emission in exhaust gas.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.90-93
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• 1992

In this paper, MOS characteristics of gate dielectrics prepared by furnace oxidation of Si in an $N_2O$ ambient have been studied. Compared with the oxides grown in $O_2$, $N_2O$ oxides show significantly improved breakdown field and low flat band voltage. Also, $N_2O$ oxide is more controllable for ultrathin film growth than $O_2$ oxide. This improvement is caused by nitrogen incorporation into the $N_2O$ oxide. Therefore, the nitrogen-rich-layer at the Si/$SiO_2$ interface formed during $N_2O$ oxidation not only strengthen $N_2O$ oxide structure at the interface and improves the gate dielectric quality, it also acts as a oxidant diffusion barrier that reduces the oxidation rate significantly.