• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.116-119
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• 2003

$Ni_2$MnGa films, deposited on mica and glass substrates, were studied by ferromagnetic resonance (FMR) technology. The temperature-dependent resonance field was measured and a martensitic phase transformation (MT) was found between 310 and 340 K, exhibiting an abnormality on the curve. The easy axis is found to be in the film plane. The line width increases as a whole with decreasing temperature, which is discussed in terms of the motional narrowing mechanism. The resonance field was also measured as a function of orientation and the results were fitted, exhibiting a good consistence.

• Journal of Magnetics
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• v.19 no.2
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• pp.126-129
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• 2014

We report the crystallographic and magnetic properties of $Ni_{0.3}Fe_{0.7}Ga_2S_4$ by means of X-ray diffractometer (XRD), a superconducting quantum interference device (SQUID) magnetometer, and a M$\ddot{o}$ssbauer spectroscopy. In particular, $Ni_{0.3}Fe_{0.7}Ga_2S_4$ was studied by M$\ddot{o}$ssbauer analysis for evidence of spin reorientation. The chalcogenide material $Ni_{0.3}Fe_{0.7}Ga_2S_4$ was fabricated by a direct reaction method. XRD analysis confirmed that $Ni_{0.3}Fe_{0.7}Ga_2S_4$ has a 2-dimension (2-D) triangular lattice structure, with space group P-3m1. The M$\ddot{o}$ssbauer spectra of $Ni_{0.3}Fe_{0.7}Ga_2S_4$ at spectra at various temperatures from 4.2 to 300 K showed that the spectrum at 4.2 K has a severely distorted 8-line shape, as spin liquid. Electric quadrupole splitting, $E_Q$ has anomalous two-points of temperature dependence of $E_Q$ curve as freezing temperature, $T_f=11K$, and N$\acute{e}$el temperature, $T_N=26K$. This suggests that there appears to be a slowly-fluctuating "spin gel" state between $T_f$ and $T_N$, caused by non-paramagnetic spin state below $T_N$. This comes from charge re-distribution due to spin-orientation above $T_f$, and $T_N$, due to the changing $E_Q$ at various temperatures. Isomer shift value ($0.7mm/s{\leq}{\delta}{\leq}0.9mm/s$) shows that the charge states are ferrous ($Fe^{2+}$), for all temperature range. The Debye temperature for the octahedral site was found to be ${\Theta}_D=260K$.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.10
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• pp.1545-1553
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• 1989

The ohmic contact behavior in HEMT structure was compared with that in MESFET one throughout the specific contact resistance and microstructural change in both structures. A Au-Ge-Ni based metallization scheme was used and the alloying temperature of the ohmic materials was changed from 330\ulcorner to 550\ulcorner. The alloying temperature to obtain the minimum specific contact resistance in HEMT structure was 60k higher than that in MESFET. The volume fraction of NiAs (Ge) in MESFET structure increases with alloying temperature and/or the alloying time, which makes the decrease of specific contact resistance at the initial stage of ohmic metallization. In contrast, the volume fraction of NiAs(Ge) in HEMT structure was not dependent upon the specific contact resistance, which implies that the ohmic contacts are dominantly formed by the Ge diffusion to 2-DEG(two dimensional electron gas) layer.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.1
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• pp.50-57
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• 1986

The fabricatoin sequence of GaAs MIS type diode and its electrical characteristics are presented. Used wafers were undoped GaAS wafer adn Te-doped GaAs wafer. Au and AuGe/Ni was used as schottky contact metal and ohmic contact metal respectively. Oxide layer on GaAs surface was formed by water vapor saturated oxide growth technique and dry oxidation technique. In Te-doped GaAs wafer, cutin voltage of MIS type diode was enhanced about 3V comparing with non-oxide layer diode. From light I-V characteristics fill factor of MIS type Te-doped GaAs diode was about 64%, Voc(open circuit voltage) was 0.67V.

• Journal of Sensor Science and Technology
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• v.32 no.6
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• pp.425-431
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• 2023

An asymmetric metal-semiconductor-metal Al_0.24Ga_0.76N ultraviolet (UV) sensor was fabricated, and the effects of local Joule heating were investigated. After dielectric breakdown, the current density under a reverse bias of 2.0 V was 1.1×10^-9 A/cm², significantly lower than 1.2×10^-8 A/cm² before dielectric breakdown; moreover, the Schottky behavior of the Ti/Al/Ni/Au electrode changed to ohmic behavior under forward bias. The UV-to-visible rejection ratio (UVRR) under a reverse bias of 7.0 V before dielectric breakdown was 87; however, this UVRR significantly increased to 578, in addition to providing highly reliable responsivity. Transmission electron microscopy revealed interdiffusion between adjacent layers, with nitrogen vacancies possibly formed owing to local Joule heating at the AlGaN/Ti/Al/Ni/Au interfaces. X-ray photoelectron microscopy results revealed decreases in the peak intensities of the O 1s binding energies associated with the Ga-O bond and OH-, which act as electron-trapping states on the AlGaN surface. The reduction in dark current owing to the proposed local heating method is expected to increase the sensing performance of UV optoelectronic integrated devices, such as active-pixel UV image sensors.

• Resources Recycling
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• v.32 no.1
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• pp.60-66
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• 2023

As supply chain management becomes a key factor in the sustainable growth of the industry, securing minerals at the national or corporate level is becoming important. Depending on the industrial structure, the economic status of each minerals is different and the supply risk is different In this study, to examine the economic status of minerals, an index that can quantify the Industrial Economic Importance by minerals was developed and calculated by reflecting the demand structure and cost weight of each industry. As a result, Li, Al, Cu, Si, Co, Ni, etc. were evaluated as having high industrial importance in Korea. In addition, by industry, Al, Cu, Zn, and Pb for primary metal manufacturing, general machinery, assembly metals,Sn, Ba, Ti, Si and Ga for precision equipment, Si and Ga for semiconductors, and Li, Ni, Co, Si, etc. for electronic components had high industrial importance. Such as Europe and the United States, in order to select Critical-minerals, Korea will need to analyze the economic impact on the domestic industry as well as the risks of supply chain by minerals.

• Journal of IKEEE
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• v.13 no.4
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• pp.23-27
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• 2009

Ohmic contact formation and etching processes for the fabrication of MBE (molecular beam epitaxy) grown GaSb-based p-channel HEMT devices on Si substrate have been studied. Firstly, mesa etching process was established for device isolation, based on both HF-based wet etching and ICP-based dry etching. Ohmic contact process for the source and drain formation was also studied based on Ge/Au/Ni/Au metal stack, which resulted in a contact resistance as low as $0.683\;{\Omega}mm$ with RTA at $320^{\circ}C$ for 60s. Finally, for gate formation of HEMT device, gate recess process was studied based on AZ300 developer and citric acid-based wet etching, in which the latter turned out to have high etching selectivity between GaSb and AlGaSb layers that were used as the cap and the barrier of the device, respectively.

• Journal of the Korean Vacuum Society
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• v.20 no.2
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• pp.127-134
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• 2011

We investigate the crystallographic orientation and strain states of the Ni/Ag ohmic contacts on p-type GaN. The Ag film in the Ni/Ag contact was severely agglomerated during high temperature annealing in air ambient. As a results, after annealing for 24 h, the Ni/Ag contact shows non-linear I-V curve and low light reflectance of ~21% at 460 nm wavelength. High-resolution X-ray diffraction results show that the interplanar spacing of Ag (111) planes is almost same to that of bilk Ag after annealing for 24 hrs, indicating that the in-plane tensile strain in the Ag film was fully relaxed due to the Ag agglomeration.

• New & Renewable Energy
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• v.5 no.3
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• pp.26-31
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• 2009

Using MBE growth method, GaAs/AlGaAs solar cell structure was grown. Deposited electrodes are Au/Ni/Ge for n-type and Au/Pt/Ti for p-type electrodes were deposited by E-beam evaporator. Indoor light concentrators were devised and fabricated in order to concentrate artificial solar rays. Also mirror and prism and Fresnel lens concentration system with solar simulator were devised and fabricated. Results of solar cell characteristics were measured with shutting system which can control the amount of light. Maximum power density was 2.13 W/$cm^2$ and maximum concentration was 124 sun, when mirror with Fresnel lens was used at $7854\;mm^2$ of shutter hole.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.27-28
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• 2007

In this paper, Ni-Co alloy was used for improvement of thermal stability of Ni silicide. The proposed Ni/Ni-Co structure exhibited wide temperature window of rapid thermal process. Sheet resistance as well as cross-sectional profile showed stable characteristics in spite of high temperature annealing up to $700^{\circ}C$ for 30min. Therefore, the proposed Ni/Ni-Co structure is highly promising for highly thermal immune Ni silicide for nano-scale CMOSFET technology.