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http://dx.doi.org/10.5757/JKVS.2011.20.2.127

Structural Analysis of Ag Agglomeration in Ag-based Ohmic Contact to p-type GaN  

Son, J.H. (Department of Material Science and Engineering, Pohang University of Science and Technology)
Song, Y.H. (Department of Material Science and Engineering, Pohang University of Science and Technology)
Lee, J.L. (Department of Material Science and Engineering, Pohang University of Science and Technology)
Publication Information
Journal of the Korean Vacuum Society / v.20, no.2, 2011 , pp. 127-134 More about this Journal
Abstract
We investigate the crystallographic orientation and strain states of the Ni/Ag ohmic contacts on p-type GaN. The Ag film in the Ni/Ag contact was severely agglomerated during high temperature annealing in air ambient. As a results, after annealing for 24 h, the Ni/Ag contact shows non-linear I-V curve and low light reflectance of ~21% at 460 nm wavelength. High-resolution X-ray diffraction results show that the interplanar spacing of Ag (111) planes is almost same to that of bilk Ag after annealing for 24 hrs, indicating that the in-plane tensile strain in the Ag film was fully relaxed due to the Ag agglomeration.
Keywords
p-GaN; Reflective ohmic contact; Ag agglomeration; Light-emitting diode;
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Times Cited By KSCI : 2  (Citation Analysis)
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