• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.8
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• pp.714-719
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• 2005

NiCr thin film was deposited by DC magnetron sputtering on $A;_2O_3$/Si substrate with NiCr (80:20) alloy target. NiCr thin films were annealed at $300^{\circ}C,\;400^{\circ}C,\;500^{\circ}C,\;600^{\circ}C,\;and\;700^{\circ}C$ for 6 hr in $H_2$ after annealing at $500^{\circ}C$ for 6hr in air atmosphere, respectively. To analyze NiCr thin film properties, the changes of its micro structure were Investigated through field emission scanning electron microscope (FESEM). X-ray photoelectron spectroscopy (XPS) was used to analyze a surface of NiCr thin film. Resistance of NiCr thin film was measured by 4-point probe technique. The generated heats were measured by infrared thermometer through the application of DC voltage (5 V/l2 V). NiCr thin film treated by gradational double annealing process had uniform and small grains. Maximum temperature generated heat by NiCr micro heater was $173^{\circ}C$. We expect that our results will be a useful reference in the realization of NiCr micro heater.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.205-206
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• 2011

Cu thin films for electromagnetic wave shielding were prepared on PET film and Ni-coated PET film by using Dry and Wet coating method, such as evaporation method, DC sputtering method and copper sulfate($CuSO_4$). After that, Zn thin film and Ni thin film were prepared onto the Cu thin films by using evaporation dry process and Ni electro plating wet process as a finishing treatment, respectively. The result of conductivity test and corrosion resistance test revealed Cu thin films which were formed with bigger grain size and high Cu composition rate have superior properties. Zn thin film by dry evaporation process and Ni thin film by wet electro plating process on Cu thin films were largely contributed to corrosion resistance. However, Ni thin film by wet process made conductivity of all specimen worse, the other hand, Zn thin film by dry process made it better to improve condictivity of specimens just prepared by dry process.

• Journal of Electrical Engineering and Technology
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• v.2 no.4
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• pp.525-531
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• 2007

Ni(75 wt.%)-Cr(20 wt.%)-Al(3 wt.%)-Mn(4 wt.%)-Si(1 wt.%) alloy thin films were prepared using the DC magnetron sputtering process by varying the sputtering conditions such as power, pressure, substrate temperature, and post-deposition annealing temperature in order to fabricate a precision thin film resistor. For all the thin film resistors, sheet resistance, temperature coefficient of resistance (TCR), and crystallinity were analyzed and the effects of sputtering conditions on their properties were also investigated. The oxygen content and TCR of Ni-Cr-Al-Mn-Si resistors were decreased by increasing the sputtering pressure. Their sheet resistance, TCR, and crystallinity were enhanced by elevating the substrate temperature. In addition, the annealing of the resistor thin films in air at a temperature higher than $300^{\circ}C$ lead to a remarkable rise in their sheet resistance and TCR. This may be attributed to the improved formation of NiO layer on the surface of the resistor thin film at an elevated temperature.

• Journal of Sensor Science and Technology
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• v.27 no.1
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• pp.36-39
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• 2018

Transparent olivine $LiNiPO_4$ thin films on sapphire substrates were fabricated by radio frequency (RF) magnetron sputtering. The X-ray diffraction patterns show these thin films have the phase of $LiNiPO_4$ with an ordered olivine structure indexed to the orthorhombic Pmna space group. $LiNiPO_4$ thin films deposited on sapphire substrates exhibit transmittance of about 83 %. It was confirmed that the $LiNiPO_4$ thin film exhibits a high potential of 5 V-class.

• Journal of the Korean institute of surface engineering
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• v.44 no.4
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• pp.137-143
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• 2011

The internal stress and magnetic properties (coercivity and squareness) of Ni-Fe nano thin film synthesized by electrodeposition method were studied as a function of acidic chloride bath conditions (composition and temperature) and current density. Fe deposition patterns were different depending on the temperature of the solution, the stress of film decreased with increasing the solution temperature, and the depending on the amount of Fe deposition showed a parabolic shape. The grain size of film was inversely proportional to stress of thin film. The internal stress of thin film and magnetic properties were deeply relevant, and the stress of thin film had a relationship with bath conditions and grain size of the thin film surface.

• Journal of the Korean institute of surface engineering
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• v.53 no.1
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• pp.1-8
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• 2020

Sulfamate-chloride baths were fabricated to study the properties of the electrodeposited Ni and NiCo thin films. The dependences of current efficiency, deposit composition of Ni and Co, residual stress, surface morphology and microstructure of electrodeposited Ni and NiCo thin films on CoCl₂ concentration in sulfamate-chloride baths were investigated. The current efficiency was measured to be more than about 90%, independent of the changes of CoCl₂ concentration in the baths. Residual stress of Ni and NiCo thin films was increased from about 45 to about 250 MPa with varying CoCl₂ concentration from 0 to 0.210 M CoCl₂ in the baths and then reached to a plateau, about 250 MPa above 0.420 M CoCl₂ concentration. Nodular surface morphologies were observed at most CoCl₂ concentrations in the baths except 0.210 M. NiCo thin film electrodeposited from the bath with 0.210 M CoCl₂ concentration showed an acicular surface morphology. Pure Ni thin film consists of FCC(111), FCC(200), FCC(220), and FCC(311) peaks without any preferred orientation. On the other hand NiCo thin films make up of HCP(100), FCC(111), HCP(101), FCC(200), FCC(220) or HCP(110), FCC(311) or HCP(112) and FCC(222) peaks. It was revealed from the analysis of XRD result that FCC(111) peak at the NiCo thin film electrodeposited from the bath with 0.084 M CoCl₂ concentration can be regarded as the preferred orientation. However the peak of the preferred orientation was changed to FCC(220) or HCP(110) above 0.084 M CoCl₂ concentration in the baths. Then the intensity of FCC(220) or HCP(110) peak was gradually decreased with increasing CoCl₂ concentration further. The crystalline size of pure Ni thin film was observed to be about 53 ㎛ and those of NiCo thin films were in the range of 35~45 ㎛.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.2
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• pp.138-143
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• 2003

A double spiral thin-film inductor with a NiFe magnetic core is integrated with DC-DC converter IC. The NiFe core is deposited on a polyimide film as the thinckness of NiFe is 2.5~3.5 ${\mu}$m. Then, copper conductor line is deposited on the NiFe core with double spiral structure. Process integration is performed by sequential processes of etching the polyimide film deposited both top and bottom of the NiFe core and electroplation copper conductor line from exposed metal pad of the DC-DC converter IC. Process integration is simplified by elimination planarization process for top core because the proposed thin-film inductor has a bottom NiFe core only. Inductor of the fabricated monolithic DC-DC converter IC is 0.53 ${\mu}$H when the area of converter IC and thin-film inductor are 5X5$\textrm{mm}^2$ and 3.5X2.5$\textrm{mm}^2$, respectively. The efficiency is 72% when input voltage and output voltage are 3.5 V and 6 V, respectively at the operation frequency of 8 MHz.

• Electrical & Electronic Materials
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• v.10 no.9
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• pp.938-944
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• 1997

Cu-Ni thin film strain gauges for diaphragm-type pressure sensors were developed. Thin films of Cu-Ni alloys of various compositions were deposited onto glass and stainless steel substrates by RF magnetron sputtering. The effects of composition substrate temperature Ar partial pressure and aging on the electrical properties of Cu-Ni film strain gauges in the thickness range 500~2000$\AA$ are discussed. The maximum resistivity(95.6 $\mu$$\Omega$cm) is obtained from 53wt%Cu-47wt%Ni films while the temperature coefficient of resistance(TCR) becomes minimum(25.6ppm/$^{\circ}C$). The gauge factor is about 1.9.

• Proceedings of the Korean Vacuum Society Conference
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• 2006.02a
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• pp.185-185
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• 2006

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.2
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• pp.169-173
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• 2005

Ni oxide thin films were formed through annealing treatment in the atmosphere after Ni thin films deposited by a r.f. magnetron sputtering method and then electric and material properties were analyzed for application to thermal sensors. Resistivity of Ni thin films decreased after annealing treatment at 30$0^{\circ}C$ and 40$0^{\circ}C$ for five hours due to crystallization of Ni thin films but the value increased over 45$0^{\circ}C$ because of Ni thin film's oxidation. Resistivity values of Ni thin films were in the range of 10.5 $\mu$Ωcm/$^{\circ}C$ to 2.84${\times}$10$^4$$\mu$Ωcm/$^{\circ}C$ according to the degree of Ni oxidation. Also temperature coefficient of resistance(TCR) values of Ni oxide thin films depended on the degree of Ni oxidation such as 2,188 ppm/$^{\circ}C$ to 5,630 ppm/$^{\circ}C$ in the temperature range of 0 $^{\circ}C$∼150 $^{\circ}C$. The results demonstrate that Ni oxide thin films of annealing treatment at 40$0^{\circ}C$ for 5hours could be more advantageous than pure Ni thin films and Pt thin films from a point of output properties and TCR, applied to thermal sensors.