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Fully CMOS-compatible Process Integration of Thin film Inductor with a Sputtered Bottom NiFe Core

스퍼터링 방법으로 증착된 하층 NiFe 코어를 갖는 박막인덕터의 CMOS 집적화 공정

  • 박일용 (한국전자통신연구원 반도체?원천기술연구소) ;
  • 김상기 (한국전자통신연구원 반도체?원천기술연구소) ;
  • 구진근 (한국전자통신연구원 반도체?원천기술연구소) ;
  • 노태문 (한국전자통신연구원 반도체?원천기술연구소) ;
  • 이대우 (한국전자통신연구원 반도체?원천기술연구소) ;
  • 김종대 (한국전자통신연구원 반도체?원천기술연구소)
  • Published : 2003.02.01

Abstract

A double spiral thin-film inductor with a NiFe magnetic core is integrated with DC-DC converter IC. The NiFe core is deposited on a polyimide film as the thinckness of NiFe is 2.5~3.5 ${\mu}$m. Then, copper conductor line is deposited on the NiFe core with double spiral structure. Process integration is performed by sequential processes of etching the polyimide film deposited both top and bottom of the NiFe core and electroplation copper conductor line from exposed metal pad of the DC-DC converter IC. Process integration is simplified by elimination planarization process for top core because the proposed thin-film inductor has a bottom NiFe core only. Inductor of the fabricated monolithic DC-DC converter IC is 0.53 ${\mu}$H when the area of converter IC and thin-film inductor are 5X5$\textrm{mm}^2$ and 3.5X2.5$\textrm{mm}^2$, respectively. The efficiency is 72% when input voltage and output voltage are 3.5 V and 6 V, respectively at the operation frequency of 8 MHz.

Keywords

References

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