• 제목/요약/키워드: Ni/Co composite silicide

검색결과 17건 처리시간 0.018초

코발트/니켈 적층구조 박막으로부터 형성된 복합실리사이드 (Characterizatics of Composite Silicides from Co/Ni Structure)

  • 송오성;정성희;김득중;최용윤
    • 한국재료학회지
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    • 제14권11호
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    • pp.769-774
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    • 2004
  • 15 nm-Co/15 nm-Ni/P-Si(100)[Type I] and 15 nm-Ni/15 nm-Co/P-Si(100)(Type II) bilayer structures were annealed using a rapid thermal annealer for 40sec at $700/sim1100^{\circ}C$. The annealed bilayer structures developed into composite NiCo silicides and resulting changes in sheet resistance, composition and microstructure were investigated using Auger electron spectroscopy and transmission electron microscopy. Prepared NiCoSix films were further treated in a sequential annealing set up from $900\sim1100^{\circ}C$ with 30 minutes. The sheet resistances of NiCoSix from Type I maintained less than $7\;{\Omega}/sq$. even at the temperature of $1100{\circ}C$, while those of Type II showed about $5\;{\Omega}/sq$. with the thinner and more uniform thickness. With the additive post annealing, the sheet resistance for all the composite silicides remained small up to $900^{\circ}C$. The proposed NiCoSix films were superior over the conventional single-phased silicides and may be easily incorporated into the sub-0.1 ${\mu}m$ process.

Co/Ni 복합 실리사이드 제조 온도에 따른 측벽 스페이서 물질 반응 안정성 연구 (Reaction Stability of Co/Ni Composite Silicide on Side-wall Spacer with Silicidation Temperatures)

  • 송오성;김상엽;정영순
    • 한국표면공학회지
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    • 제38권3호
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    • pp.89-94
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    • 2005
  • We investigate the reaction stability of cobalt and nickel with side-wall materials of $SiO_2\;and\;Si_3N_4$. We deposited 15nm-Co and 15nm-Ni on $SiO_2(200nm)/p-type$ Si(100) and $Si_3N_4(70 nm)/p-type$ Si(100). The samples were annealed at the temperatures of $700\~1100^{\circ}C$ for 40 seconds with a rapid thermal annealer. The sheet resistance, shape, and composition of the residual materials were investigated with a 4-points probe, a field emission scanning electron microscopy, and an AES depth profiling, respectively. Samples of annealed above $1000^{\circ}C$ showed the agglomeration of residual metals with maze shape and revealed extremely high sheet resistance. The Auger depth profiling showed that the $SiO_2$ substrates had no residual metallic scums after $H_2SO_4$ cleaning while $Si_3N_4$ substrates showed some metallic residuals. Therefore, the $SiO_2$ spacer may be appropriate than $Si_3N_4$ for newly proposed Co/Ni composite salicide process.

코발트/니켈 복합실리사이드의 실리사이드온도에 따른 면저항과 미세구조 변화 (Sheet Resistance and Microstructure Evolution of Cobalt/Nickel Silicides with Annealing Temperature)

  • 정영순;정성희;송오성
    • 한국재료학회지
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    • 제14권6호
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    • pp.389-393
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    • 2004
  • The silicide layer used as a diffusion barrier in microelectronics is typically required to be below 50 nm-thick and, the same time, the silicides also need to have low contact resistance without agglomeration at high processing temperatures. We fabricated Si(100)/15 nm-Ni/15 nm-Co samples with a thermal evaporator, and annealed the samples for 40 seconds at temperatures ranging from $700^{\circ}C$ to $1100^{\circ}C$ using rapid thermal annealing. We investigated microstructural and compositional changes during annealing using transmission electron microscopy and auger electron spectroscopy. Sheet resistance of the annealed sample stack was measured with a four point probe. The sheet resistance measurements for our proposed Co/Ni composite silicide was below 8 $\Omega$/sq. even after annealing $1100^{\circ}C$, while conventional nickel-monosilicide showed abrupt phase transformation at $700^{\circ}C$. Microstructure and auger depth profiling showed that the silicides in our sample consisted of intermixed phases of $CoNiSi_{x}$ and NiSi. It was noticed that NiSi grew rapidly at the silicon interface with increasing annealing temperature without transforming into $NiSi_2$. Our results imply that Co/Ni composite silicide should have excellent high temperature stability even in post-silicidation processes.

폴리실리콘 기판 위에 형성된 코발트 니켈 복합실리사이드 박막의 열처리 온도에 따른 물성과 미세구조변화 (Characteristics and Microstructure of Co/Ni Composite Silicides on Polysilicon Substrates with Annealing Temperature)

  • 김상엽;송오성
    • 한국재료학회지
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    • 제16권9호
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    • pp.564-570
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    • 2006
  • Silicides have been required to be below 40 nm-thick and to have low contact resistance without agglomeration at high silicidation temperature. We fabricated composite silicide layers on the wafers from Ni(20 nm)/Co(20 nm)/poly-Si(70 nm) structure by rapid thermal annealing of $700{\sim}1100^{\circ}C$ for 40 seconds. The sheet resistance, surface composition, cross-sectional microstructure, and surface roughness were investigated by a four point probe, a X-ray diffractometer, an Auger electron spectroscopy, a field emission scanning electron microscope, and a scanning probe microscope, respectively. The sheet resistance increased abruptly while thickness decreased as silicidation temperature increased. We propose that the fast metal diffusion along the silicon grain boundary lead to the poly silicon mixing and inversion. Our results imply that we may consider the serious thermal instability in designing and process for the sub-0.1 um CMOS devices.

코발트 니켈 합금 구조에서 생성된 실리사이드의 마이크로 핀홀의 발생 (Micro-pinholes in Composite Cobalt Nickel Silicides)

  • 송오성;김상엽;전장배;김문제
    • 한국재료학회지
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    • 제16권10호
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    • pp.656-662
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    • 2006
  • We fabricated thermal evaporated 10 nm-$Ni_xCo_{1-x}$ (x=0.2, 0.5 and 0.8) /(poly)Si films to form nanothick cobalt nickel composite silicides by a rapid thermal annealing at $700{\sim}1100^{\circ}C$ for 40 seconds. A field emission scanning electron microscope and a micro-Raman spectrometer were employed for microstructure and silicon residual stress characterization, respectively. We observed self-aligned micro-pinholes on single crystal silicon substrates silicidized at $1100^{\circ}C$. Raman silicon peak shift indicates that the residual tensile strain of $10^{-3}$ in single crystal silicon substrates existed after the silicide process. We propose thermal stress from silicide exothermic reaction and high temperature silicidation annealing may cause the pinholes. Those pinholes are expected to be avoided by lowering the silicidation temperature. Our results imply that we may use our newly proposed composite silicides to induce the appropriate strained layer in silicion substrates.

자연산화막 존재에 따른 코발트 니켈 복합실리사이드 공정의 안정성 (Silicidation Reaction Stability with Natural Oxides in Cobalt Nickel Composite Silicide Process)

  • 송오성;김상엽;김종률
    • 한국산학기술학회논문지
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    • 제8권1호
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    • pp.25-32
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    • 2007
  • 코발트 니켈 합금형 실리사이드 공정에서 단결정실리콘과 다결정실리콘 기판에 자연산화막이 있는 경우 나노급 두께의 코발트 니켈 합금 금속을 증착하고 실리사이드화하는 경우의 반응 안정성을 확인하였다. 4인치 P-type(100)Si 기판 전면에 poly silicon을 입힌 기판과 single silicon 상태의 두 종류 기판을 준비하고 두께 4 nm의 자연산화막이 있는 상태에서 10 nm 코발트 니켈 합금을 니켈의 상대조성을 $10{\sim}90%$로 달리하며 열증착하였다. 통상의 600, 700, 800, 900, 1000, $1100^{\circ}C$ 각 온도에서 실리사이드화 열처리를 시행 후 잔류 합금층을 제거하고, XRD(X-ray diffraction)및 FE-SEM(Field emission scanning electron microscopy), AES(Auger electron spectroscopy)를 사용하여 실리사이드가 생겼는지 확인하였다. 마이크로라만 분석기로 실리사이드 반응시의 실리콘 층의 잔류 스트레스도 확인하였다. 자연산화막이 존재하는 경우 실리사이드 반응이 진행되지 않았고, 폴리실리콘 기판과 고온에서는 금속과 산화층의 반응잔류물이 생성되었다. 단결정 기판의 고온열처리에서는 실리사이드 반응이 없더라도 핀홀이 발생할 수 있는 정도의 열스트레스가 존재하였다. 코발트 니켈 복합실리사이드 공정에서는 자연산화막을 제거하는 공정이 필수적이었다.

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Evaluations of Si based ternary anode materials by using RF/DC magnetron sputtering for lithium ion batteries

  • 황창묵;박종완
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.302-303
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    • 2010
  • Generally, the high energy lithium ion batteries depend intimately on the high capacity of electrode materials. For anode materials, the capacity of commercial graphite is unlike to increase much further due to its lower theoretical capacity of 372 mAhg-1. To improve upon graphite-based negative electrode materials for Li-ion rechargeable batteries, alternative anode materials with higher capacity are needed. Therefore, some metal anodes with high theoretic capacity, such as Si, Sn, Ge, Al, and Sb have been studied extensively. This work focuses on ternary Si-M1-M2 composite system, where M1 is Ge that alloys with Li, which has good cyclability and high specific capacity and M2 is Mo that does not alloy with Li. The Si shows the highest gravimetric capacity (up to 4000mAhg-1 for Li21Si5). Although Si is the most promising of the next generation anodes, it undergoes a large volume change during lithium insertion and extraction. It results in pulverization of the Si and loss of electrical contact between the Si and the current collector during the lithiation and delithiation. Thus, its capacity fades rapidly during cycling. Si thin film is more resistant to fracture than bulk Si because the film is firmly attached to the substrate. Thus, Si film could achieve good cycleability as well as high capacity. To improve the cycle performance of Si, Suzuki et al. prepared two components active (Si)-active(Sn, like Ge) elements film by vacuum deposition, where Sn particles dispersed homogeneously in the Si matrix. This film showed excellent rate capability than pure Si thin film. In this work, second element, Ge shows also high capacity (about 2500mAhg-1 for Li21Ge5) and has good cyclability although it undergoes a large volume change likewise Si. But only Ge does not use the anode due to its costs. Therefore, the electrode should be consisted of moderately Ge contents. Third element, Mo is an element that does not alloys with Li such as Co, Cr, Fe, Mn, Ni, V, Zr. In our previous research work, we have fabricated Si-Mo (active-inactive elements) composite negative electrodes by using RF/DC magnetron sputtering method. The electrodes showed excellent cycle characteristics. The Mo-silicide (inert matrix) dispersed homogeneously in the Si matrix and prevents the active material from aggregating. However, the thicker film than $3\;{\mu}m$ with high Mo contents showed poor cycling performance, which was attributed to the internal stress related to thickness. In order to deal with the large volume expansion of Si anode, great efforts were paid on material design. One of the effective ways is to find suitably three-elements (Si-Ge-Mo) contents. In this study, the Si based composites of 45~65 Si at.% and 23~43 Ge at.%, and 12~32 Mo at.% are evaluated the electrochemical characteristics and cycle performances as an anode. Results from six different compositions of Si-Ge-Mo are presented compared to only the Si and Ge negative electrodes.

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