• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1158-1161
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• 2006

The toner type paper-like display (PLD) has been developed with two polymer particles having opposite polarity which is composed of polymer, colorant and external additives (nano-sized silica). Nano-sized silica with triboelectric charge was used for the charge control agent (CCA) and influenced on the electrostatic properties of the silica-coated polymer particles. The PLD cell using silica-coated particles (200 seconds) had shown a good white appearance and low driving voltage. The result could be explained in terms of the surface morphology and the cohesiveness depending on the silica coating time.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.387-390
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• 2006

The protective layer of AC-PDP was fabricated by laminating an MgO green sheet. The MgO green sheet was made by coating MgO solution composed of solvent, dispersant, binder, and MgO nano-powder. The MgO solution was coated by the die casting method on the base film. We fabricated three kinds of MgO green sheets of which thicknesses were 20, 28, and $40\;{\mu}m$, respectively. The MgO nano-powder showed lower CL intensity and ${\gamma}i$ than the e-beam MgO. The MgO green sheet applied panels showed low luminance and current density. The efficiency was almost same as the conventional e-beam MgO panel.

• Journal of Information Display
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• v.8 no.1
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• pp.14-17
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• 2007

The toner type paper-like display (PLD) has been developed with two polymer particles having opposite polarity composed of polymer, colorant and external additives (nano-sized silica). Nano-sized silica with triboelectric charge was used for the charge control agent (CCA) and influenced on the electrostatic properties of the silica-coated polymer particles. The surface morphology and the cohesiveness of silica-coated polymer particles were changed with the silica coating time. From these results, it was verified that the PLD cell using silica-coated particles (200 seconds) shows a good white appearance and low driving voltage.

• Proceedings of the KIPE Conference
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• 2019.07a
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• pp.248-250
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• 2019

입자가속기는 물질의 미세 구조를 밝히기 위해 기본 입자를 가속, 충돌시키는 장치로 최근 암치료 등 의학적 용도로도 이용되고 있다. 그러나 고속으로 고압을 인가시켜야 하는 장치인 만큼 기존에 명확히 설립된 회로가 없다. 이에 본 논문에서는 Ion gate를 등가회로로 구성하여 Fast Switch 장치의 기본 회로를 제안 및 분석, 실험하였다. 또한 기본 회로에서 발생하는 문제들을 개선하고자 RC Input filter와 기타 파라미터들의 설계와 Fast switch와 Ion gate를 잇는 wire 내의 기생성분을 고찰하였고 Ion gate 구동을 위해 기준이 되는 명확한 Fast switch 회로를 제안한다.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.25-34
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• 2018

In this paper, we review the latest technical progress and commercialization of stretchable interconnectors, stretchable strain sensors, and stretchable substrates for stretchable electronics. The development of stretchable electronics can pave a way for new applications such as wearable devices, bio-integrated devices, healthcare and monitoring, and soft robotics. The essential components of stretchable electronic devices are stretchable interconnector and stretchable substrate. Stretchable interconnector should have high stretchability and high electrical conductivity as well as stability under severe mechanical deformation. Therefore several nanocomposite-based materials using CNT, graphene, nanowire, and metal flake have been developed. Geometric engineering such as wavy, serpentine, buckled and mesh structure has been well developed. Stretchable substrate should also pose high stretchability and compatibility with stretchable sensing or interconnecting material. We summarize the recent research results of new materials for stretchable interconnector and substrate as well as strain sensors. The Important challenges in development of the stretchable interconnector and substrate are also briefly discussed.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.517-518
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• 2006

Optically pumped THz emission has been observed in a wide range of semiconductors, and this process is an important practical source of pulsed THz radiation for time-domain THz spectroscopy and THz imaging. We show that InAs quantum dots on GaAs can be used to significantly enhance THz emission compared with a bare GaAs surface.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.7
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• pp.21-29
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• 2004

Hot carrier degradation characteristics of Nano-scale CMOSFETs with dual gate oxide have been analyzed in depth. It is shown that, PMOSFET lifetime dominate the device lifetime than NMOSFET In Nano-scale CMOSFETs, that is, PMOSFET lifetime under CHC (Channel Hot Carrier) stress is much lower than NMOSFET lifetime under DAHC (Dram Avalanche Hot Carrier) stress. (In case of thin MOSFET, CHC stress showed severe degradation than DAHC for PMOSFET and DAHC than CHC for NMOSFET as well known.) Therefore, the interface trap generation due to enhanced hot hole injection will become a dominant degradation factor in upcoming Nano-scale CMOSFET technology. In case of PMOSFETs, CHC shows enhanced degradation than DAHC regardless of thin and thick PMOSFETs. However, what is important is that hot hole injection rather than hot electron injection play a important role in PMOSFET degradation i.e. threshold voltage increases and saturation drain current decreases due to the hot carrier stresses for both thin and thick PMOSFET. In case of thick MOSFET, the degradation by hot carrier is confirmed using charge pumping current method. Therefore, suppression of PMOSFET hot carrier degradation or hot hole injection is highly necessary to enhance overall device lifetime or circuit lifetime in Nano-scale CMOSFET technology

• Proceedings of the Korean Vacuum Society Conference
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• 2002.06a
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• pp.121-121
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• 2002

• Electronics and Telecommunications Trends
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• v.23 no.6
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• pp.124-134
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• 2008

MIT의 '테크놀로지 리뷰'는 2008년 10대 유망기술 중 하나로 나노 라디오를 소개하였다. 이와 관련하여, 본 논문에서는 나노 기술을 지원하기 위한 각국의 정책과, 현재까지 개발된 나노 라디오가 탄소나노튜브(cabon nano tube)를 이용한 점을 고려하여 CNT의 발견 및 특성을 간단히 소개하였다. 또한, 잇따른 나노 라디오의 개발사례와 동작원리를 설명하고, 나노 라디오의 킬러 애플리케이션과 CNT를 둘러싼 그 밖의 이슈를 함께 살펴보았다.

• Proceedings of the Korean Magnestics Society Conference
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• 2014.11a
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• pp.39-40
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• 2014