• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.557-559
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• 2009

We attempted modulation of hydrogen dilution ratio to achieve both the minimal incubation layer and high deposition rate. The incubation layer thickness was estimated by transmission electron microscopy (TEM) and crystallization fraction was measured by Raman spectroscopy.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.12 s.354
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• pp.33-39
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• 2006

An empirical nonlinear model with intrinsic nonlinear elements has been newly developed to predict the RF nonlinear characteristics of nano-scale bulk MOSFET accurately over the wide bias range. Using an extraction method suitable for nano-scale MOSFET, the bias-dependent data of intrinsic model parameters have been accurately obtained from measured S-parameters. The intrinsic nonlinear capacitance and drain current equations have been empirically obtained through 3-dimensional curve-fitting to their bias-dependent curves. The modeled S-parameters of 60nm MOSFET have good agreements with measured ones up to 20GHz in the wide bias range, verifying the accuracy of the nano-scale MOSFET model.

• Korean Journal of Optics and Photonics
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• v.28 no.2
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• pp.53-58
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• 2017

This paper presents the design and fabrication of a planar nano-diffraction grating for an integrated miniature spectrometer module. The proposed planar nano-diffraction grating consists of nonuniform periods, to focus the reflected beams from the grating's surface, and an asymmetrical V-shaped groove profile, to provide uniform diffraction efficiency in the wavelength range from 400 to 650 nm. Also, to fabricate the nano-diffraction grating using low-cost UV-NIL technology, we analyzed the FT-IR spectrum of a uvcurable resin and optimized the conditions for the UV curing process. Then, we precisely fabricated the polymeric nano-diffraction grating within 5 nm in dimensional accuracy. The integrated spectrometer module using the fabricated polymeric planar nano-diffraction grating provides spectral resolution of 5 nm and spectral bandwidth of 250 nm. Our integrated spectrometer module using a polymeric planar nano-diffraction grating serves as a quick and easy solution for many spectrometric applications.

• International Journal of Precision Engineering and Manufacturing
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• v.7 no.4
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• pp.3-7
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• 2006

Confocal scanning microscopy is a measurement technique used to observe micrometer and sub-micrometer features due to its high resolution, nondestructive properties, and 3D surface profiling capabilities. The design, implementation, and performance test of a confocal scanning microscopy system are presented in this paper. A short-wavelength laser (405 nm) and an objective lens with a high numerical aperture (0.95) were used to achieve the desired high resolution, while the x- and y-axis scans were implemented using an acousto-optic deflector and galvanomirror, respectively. An objective lens with a piezo-actuator was used to scan the z-axis. A spatial resolution of less than 138 nm was achieved, along with successful 3D surface reconstructions.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.147-147
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• 2011

High crystalline nonpolar a-plane (11-20) nitride light emitting diodes (LEDs) have been fabricated on r-plane (1-102) sapphire substrates by metalorganic chemical-vapor deposition (MOCVD). The multi-quantum wells (MQWs) active region is consists of 4 periods the nonpolar a-plane InGaN/GaN(a-InGaN/GaN) on a high quality a-plane GaN (a-GaN) template grown by using the multibuffer layer technique. The full widths at half maximum (FWHMs) of x-ray rocking curve (XRC) obtained from phiscan of the specimen that was grown up to nonpolar a-plane GaN LED layers with double crystal x-ray diffraction. The FWHM values were decreased down to 477 arc sec for $0^{\circ}$ and 505 arc sec for $-90^{\circ}$, respectively. After fabricating a conventional lateral LED chip which size was $300{\times}600{\mu}m^2$, we measured the optical output power by on-wafer measurements. N-electrode was made with Cr/Au contact, and ITO on p-GaN was formed with Ohmic contact using Ni/Au followed by inductively coupled plasma etching for mesa isolation. The optical output power of 1.08 mW was obtained at drive current of 20 mA with the peak emission wavelength of 502 nm.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1466-1468
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• 2009

The preparation method of copper nanopowder by dry process for conductive ink was investigated. Inert gas condensation method was used to synthesize copper nanopowder. The produced powders was spherical and sized 10~100nm flowing the conditions. The results showed that input voltage and evaporation rate is critical variables for nano-sized copper powder.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.12
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• pp.10-17
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• 2009

Nano-Electro-Mechanical MOSFET (NEMFET) using Double-Gate MOSFET (DGMOS) structure can efficiently control the short channel effect. Espatially, subthreshold current of depletion-mode Double-Gate NEMFET (Dep-DGNEMFET) decreases in the off-state due to the thin equivalent-oxide thickness. Analytical $t_gap$ vs. $V_g$ equation for Dep-DGNEMFET is derived and characteristics for different device structures are analyzed. Dep-DGNEMFET structure is optimized to satisfy ITRS criteria.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.1
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• pp.52-58
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• 2006

Single-electron transistor (SET)-based logic cells and SET/FET hybrid integrated circuits have been fabricated on SOI chips. The input-output voltage transfer characteristic of the SET-based complementary logic cell shows an inverting behavior where the output voltage gain is estimated to be about 1.2 at 4.2K. The SET/FET output driver, consisting of one SET and three FETs, yields a high voltage gain of 13 and power amplification with a wide-range output window for driving next circuit. Finally, the SET/FET literal gate for a multi-valued logic cell, comprising of an SET, an FET and a constant-current load, displays a periodic voltage output of high/low level multiple switching with a swing as high as 200mV. The multiple switching functionality of all the fabricated logic circuits could be enhanced by utilizing a side gate incorporated to each SET component to enable the phase control of Coulomb oscillations, which is one of the unique characteristics of the SET-based logic circuits.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.4
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• pp.244-248
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• 2015

We proposed and demonstrated the double layered metallic nano-hole structure using polystyrene beads process to enhance the sensitivity of surface plasmon resonance (SPR). The double layered SPR structures are calculated using the finite-difference time-domain (FDTD) method for the width, thickness, and period of the metallic nano-hole structures. The thickness of the metal film and the metallic nano-hole is 30 and 20 nm in the 214 nm wide nano-hole size, respectively. The double layered SPR structures are fabricated with monolayer polystyrene beads of 420 nm wide. The sensitivities of the conventional SPR sensor and the double layered SPR sensor are obtained to 42.2 and 52.1 degree/RIU, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2007.02a
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• pp.132-132
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• 2007