• Korean Journal of Optics and Photonics
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• v.22 no.1
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• pp.46-52
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• 2011

A confocal microscope was developed utilizing a scanning sample stage based on a home-built double-compound flexure guide. A scanning sample stage with nano-scale resolution consisted of a double leaf spring based flexure, a displacement amplifying lever, a Piezo-electric Transducer(PZT) actuator and capacitance sensors. The performance of the two-axis stage was analyzed using a commercial finite element method program prior to the implementation. A single line laser was employed as the light source along with the Photo Multiplier Tube(PMT) that served as the detector. The performance of the developed confocal microscope was evaluated with a mouse ear skin imaging test. The designed scanning stage enabled us to build the confocal microscope without the two optical scanning mirror modules that are essential in the conventional laser scanning confocal microscope. The elimination of the scanning mirror modules makes the optical design of the confocal microscope simpler and more compact than the conventional system.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.9
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• pp.6227-6235
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• 2015

The HUD has recently been downsized due to the development of micro display and LED technology as a see through information display device, gradually expands the application areas. In this paper, using a DLP micro display device designed a compact head-up display(HUD) optical system for biocular observation of the image exhibition area 5 inches. It was analyzed for each design element of the optical system in order to design a compacted HUD. DLP, projection optical system and concave image combiner were discussed the design approach and the characteristics. Through a connection structure analysis of each optical system, detailed design specifications were set up and designed the optical system in detail. Put a folded configuration in the form of a white diffuse reflector between the projection lens and concave image combiner was designed to be independent, respectively. Distance of the projected image is adjustable up to approximately 2m ~ infinity and observation distance is 1m. Resolution could be recognized by 1 ~ 2pixels in HD($1,280{\times}720pixels$) class, various characters and symbols could be read. In addition, color navigation map, daytime video camera and thermal imaging cameras can be displayed.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.362-362
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• 2010

Today, vast attention has been paid to periodic arrays of nanostructures due to their potential for applications such as memory with huge storage density. Such application requires large-scale fabrication of well ordered nano-sized structures. One of the most widely used methods for the ordered nanostructures is lithography. This top-down process, however, has the limit to reduce size. Here the promising alternative is the self-organization of ordered nano-sized structures such as large scale 2d carbon-induced reconstructions on W(110). In the present study, we report on the first well-resolved atomic resolution STM studies of the well-known R($15{\times}3$) and R($15{\times}12$) carbon induced reconstruction of the W(110). From the atomic image of R($15{\times}3$) for different values of tunneling gap resistance, we can tell there are no missing atoms in unit cells of R($15{\times}3$) and some atomic displacements are substantial from the clean W(110), even though not all the imaged position of atoms correspond to tungsten, but may include those of carbon. We are considering two cases; First case is related to lattice deformation, or top layer of W(110) is deformed in the process of relief of strain caused by random inserting of carbon atoms possibly in the interstitial position. In the second case, R($15{\times}3$) unit cell results from a coincidence lattice between clean W(110) substrate and tungsten carbide overlayer which has rectangular atomic arrangement and giving R($15{\times}3$) coincidence lattice. beta-W2C showing rectangular unit cell should be a candidate. Further, we report on new reconstructions. Unlike the well-known R($15{\times}12$) consisting of two parts, two inner structures between two "Backbone" structures. The new reconstruction, which we found for the first time, contains more parts between the "Backbone"s. Sometimes we can observe the reconstruction consists of only inner parts without "Backbone" parts. Thus, the observed reconstruction can be built by constructing of two types of "Lego"-like block. Moreover, the rectangle shape of "Backbone" transform to parallelogram-like shape over time, the so-called wavy-R($15{\times}12$). Adsorption of hydrogen can be the reason for this transformation.

• Korean Journal of Optics and Photonics
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• v.30 no.4
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• pp.154-158
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• 2019

We have used a mid-IR (mid-infrared) continuous-wave (cw) optical parametric oscillator (OPO), developed previously and described in Ref. 12, to build a performance-evaluation setup for a mid-IR spectrometer. The used CW OPO had a wavelength tuning range of $ 2.5-3.6{\mu}m$ using a pump laser with a wavelength of 1064 nm and a fan-out MgO-doped periodically poled lithium niobate (MgO:PPLN) nonlinear crystal in a concentric cavity design. The OPO was combined with a near-IR integrating sphere and a Fourier-transform IR optical spectrum analyzer to build a performance-evaluation setup for mid-IR spectrometers. We applied this performance-evaluation setup to evaluating a mid-IR spectrometer developed domestically, and demonstrated the capability of evaluating the performance, such as spectral resolution, signal-to-noise ratio, spectral stray light, and so on, based on this setup.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.3
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• pp.83-90
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• 2019

In this paper, Mg-doped AlN epilayers for power semiconductor devices are grown by mixed-source hydride vapor phase epitaxy. Magnesium is used as p-type dopant material in the grown AlN epilayer. The AlN epilayers on the GaN-templated sapphire substrate and GaN-templated-patterned sapphire substrate (PSS), respectively, as the base substrates for device application, were selectively grown. The surface and the crystal structures of the AlN epilayers were investigated by field emission scanning electron microscopy (FE-SEM) and high-resolution-X-ray diffraction (HR-XRD). From the X-ray photoelectron spectroscopy (XPS) and Raman spectra results, the p-type AlN epilayers grown by using the mixed-source HVPE method could be applied to power devices.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.3
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• pp.103-111
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• 2021

Hexagonal shape Si crystals were grown by the mixed-source hydride vapor phase epitaxy (HVPE) method of mixing solid materials such as Si, Al and Ga. In the newly designed atmospheric pressure mixed-source HVPE method, nuclei are formed by the interaction between GaCl_n, AlCl_n and SiCl_n gases at a high temperature of 1200℃. In addition, it is designed to generate a precursor gas with a high partial pressure due to the rapid reaction of Si and HCl gas. The properties of hexagonal Si crystals were investigated through scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDS), high-resolution X-ray diffraction (HR-XRD), and Raman spectrum. From these results, it is expected to be applied as a new material in the Si industry.

• Korean Journal of Metals and Materials
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• v.46 no.11
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• pp.762-769
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• 2008

Hydrogenated amorphous silicon(a-Si : H) layers, 120 nm and 50 nm in thickness, were deposited on 200 $nm-SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by E-beam evaporation. Finally, 30 nm-Ni/120 nm a-Si : H/200 $nm-SiO_2$/single-Si and 30 nm-Ni/50 nm a-Si:H/200 $nm-SiO_2$/single-Si were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 30 minute. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide on the 120 nm a-Si:H substrate showed high sheet resistance($470{\Omega}/{\Box}$) at T(temperature) < $450^{\circ}C$ and low sheet resistance ($70{\Omega}/{\Box}$) at T > $450^{\circ}C$. The high and low resistive regions contained ${\zeta}-Ni_2Si$ and NiSi, respectively. In case of microstructure showed mixed phase of nickel silicide and a-Si:H on the residual a-Si:H layer at T < $450^{\circ}C$ but no mixed phase and a residual a-Si:H layer at T > $450^{\circ}C$. The surface roughness matched the phase transformation according to the silicidation temperature. The nickel silicide on the 50 nm a-Si:H substrate had high sheet resistance(${\sim}1k{\Omega}/{\Box}$) at T < $400^{\circ}C$ and low sheet resistance ($100{\Omega}/{\Box}$) at T > $400^{\circ}C$. This was attributed to the formation of ${\delta}-Ni_2Si$ at T > $400^{\circ}C$ regardless of the siliciation temperature. An examination of the microstructure showed a region of nickel silicide at T < $400^{\circ}C$ that consisted of a mixed phase of nickel silicide and a-Si:H without a residual a-Si:H layer. The region at T > $400^{\circ}C$ showed crystalline nickel silicide without a mixed phase. The surface roughness remained constant regardless of the silicidation temperature. Our results suggest that a 50 nm a-Si:H nickel silicide layer is advantageous of the active layer of a thin film transistor(TFT) when applying a nano-thick layer with a constant sheet resistance, surface roughness, and ${\delta}-Ni_2Si$ temperatures > $400^{\circ}C$.

• Journal of the Korea Society of Computer and Information
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• v.27 no.2
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• pp.33-42
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• 2022

In this paper, we proposed a deep learning model based on multi-scale dilated convolution feature fusion for the segmentation of black ice region in road image to send black ice warning to drivers in real time. In the proposed multi-scale dilated convolution feature fusion network, different dilated ratio convolutions are connected in parallel in the encoder blocks, and different dilated ratios are used in different resolution feature maps, and multi-layer feature information are fused together. The multi-scale dilated convolution feature fusion improves the performance by diversifying and expending the receptive field of the network and by preserving detailed space information and enhancing the effectiveness of diated convolutions. The performance of the proposed network model was gradually improved with the increase of the number of dilated convolution branch. The mIoU value of the proposed method is 96.46%, which was higher than the existing networks such as U-Net, FCN, PSPNet, ENet, LinkNet. The parameter was 1,858K, which was 6 times smaller than the existing LinkNet model. From the experimental results of Jetson Nano, the FPS of the proposed method was 3.63, which can realize segmentation of black ice field in real time.

• Journal of the Microelectronics and Packaging Society
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• v.31 no.3
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• pp.18-23
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• 2024

Nanoimprint lithography (NIL) is widely used to form structures ranging from micro to nanoscale due to its advantage of generating high-resolution patterns at a low process cost. However, most NIL processes require the use of imprint resists and external elements such as ultraviolet light or heat, necessitating additional post-processes like etching or metal deposition to pattern the target material. Furthermore, patterning on flexible and/or non-planar films presents significant challenges. This study introduces an extreme pressure imprint lithography (EPIL) process that can form micro-/nano-scale patterns on the surface of a flexible rubber magnet composite (RMC) film at room temperature without an etching process. The EPIL technique can form ultrafine structures over large areas through the plastic deformation of various materials, including metals, polymers, and ceramics. In this study, we demonstrate the process and outcomes of creating a variety of periodic structures with diverse pattern sizes and shapes on the surface of a flexible RMC composed of strontium ferrite and chlorinated polyethylene. The EPIL process, which allows for the precise patterning on the surface of RMC materials, is expected to find broad applications in the production of advanced electromagnetic device components that require fine control and changes in magnetic orientation.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.51-57
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• 2008

we have demonstrated structural evolution and optical properties of Si-nanowires (NWs) synthesized on Si (111) substrates with nanoscale Au-Si islands by rapid thermal chemical vapor deposition (RTCVD). The Au-Si nano-islands (10-50nm in diameter) were employed as a liquid-droplet catalysis to grow Si-NWs via vapor-liquid-solid mechanism. The Si-NWs were grown by a mixture gas of SiH4 and H2 at a pressure of 1.0 Torr and temperatures of $500{\sim}600^{\circ}C$. Scanning electron microscopy measurements showed that the Si-NWs are uniformly sized and vertically well-aligned along <111> direction on Si (111) surfaces. The resulting NWs are ${\sim}60nm$ in average diameter and ${\sim}5um$ in average length. High resolution transmission microscopy measurements indicated that the NWs are single crystals covered with amorphous SiOx layers of ${\sim}3nm$ thickness. In addition, the optical properties of the NWs were investigated by micro-Raman spectroscopy. The downshift and asymmetric broadening of the Si main optical phonon peak were observed in Raman spectra of Si-NWs, which indicates a minute stress effects on Raman spectra due to a slight lattice distortion led by lattice expansion of Si-NW structures.