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http://dx.doi.org/10.6111/JKCGCT.2021.31.3.103

Hexagonal shape Si crystal grown by mixed-source HVPE method  

Lee, Gang Seok (Department of Electronic Material Engineering, Korea Maritime and Ocean University)
Kim, Kyoung Hwa (Department of Electronic Material Engineering, Korea Maritime and Ocean University)
Park, Jung Hyun (Department of Electronic Material Engineering, Korea Maritime and Ocean University)
Kim, So Yoon (Department of Electronic Material Engineering, Korea Maritime and Ocean University)
Lee, Ha Young (Department of Electronic Material Engineering, Korea Maritime and Ocean University)
Ahn, Hyung Soo (Department of Electronic Material Engineering, Korea Maritime and Ocean University)
Lee, Jae Hak (Department of Electronic Material Engineering, Korea Maritime and Ocean University)
Chun, Young Tea (Department of Electronic Material Engineering, Korea Maritime and Ocean University)
Yang, Min (Department of Electronic Material Engineering, Korea Maritime and Ocean University)
Yi, Sam Nyung (Department of Electronic Material Engineering, Korea Maritime and Ocean University)
Jeon, Injun (Department of Nanoenergy Engineering and Department of Nano Fusion Technology, Pusan National University)
Cho, Chae Ryong (Department of Nanoenergy Engineering and Department of Nano Fusion Technology, Pusan National University)
Kim, Suck-Whan (Andong National University)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.31, no.3, 2021 , pp. 103-111 More about this Journal
Abstract
Hexagonal shape Si crystals were grown by the mixed-source hydride vapor phase epitaxy (HVPE) method of mixing solid materials such as Si, Al and Ga. In the newly designed atmospheric pressure mixed-source HVPE method, nuclei are formed by the interaction between GaCln, AlCln and SiCln gases at a high temperature of 1200℃. In addition, it is designed to generate a precursor gas with a high partial pressure due to the rapid reaction of Si and HCl gas. The properties of hexagonal Si crystals were investigated through scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDS), high-resolution X-ray diffraction (HR-XRD), and Raman spectrum. From these results, it is expected to be applied as a new material in the Si industry.
Keywords
Hexagonal Si; Cubic Si; Mixed-source HVPE; Si allotrope; Direct bandgap Si;
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