• Journal of IKEEE
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• v.7 no.1 s.12
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• pp.1-8
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• 2003

In this study, the high performance BCD device structure which satisfies the high voltage and fast switching speed characteristics is devised. Through the process and device simulation, optimal process spec. & device spec. are designed. We adapt double buried layer structure, trench isolation process, n-/p-drift region formation and shallow junction technology to optimize an electrical property as mentioned above. This I.C consists of 20V level high voltage bipolar npn/pnp device, 60V level LDMOS device, a few Ampere level VDMOS, 20V level CMOS device and 5V level logic CMOS.

• Journal of Korean Society of Environmental Engineers
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• v.27 no.12
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• pp.1277-1284
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• 2005

Alkylphenol Polyethoxylate(APEs) and their metabolites were determined in the aquatic environment in the central Nakdong river basin. The concentrations of APE's ranged between $0.62{\sim}11.70\;{\mu}g/L$ from the Nakdong and the Kumho rivers, and were $70.00{\sim}212.50\;{\mu}g/L$ in the samples from the 3rd industrial complex stream and the Dalseo stream, which are both heavily polluted by industrial wastewater and domestic wastewater. The APEs revealed a removal rate of more than 87% by biodegradation and adsorption etc. in the wastewater treatment plant. Nonylphenol polyethoxylates(NPnEO) and Nonylphenol carboxylic acid(NPnEC) consisted of APE metabolites shifted from NP($n=4{\sim}10$)EO and NP($n=4{\sim}10$)EC to NP($n=1{\sim}3$)EO and NP($n=1{\sim}3$)EC or removed by the adsorption of activated sludge during the biological wastewater treatment process. Upper streams have a higher distributed rate of NP($n=7{\sim}10$)EO than water downstream. Continuous monitoring is necessary for non-point sources as well as point sources, such as a wastewater treatment plant. Effluent concentrations of nonylphenol(NP) in industrial wastewater and domestic wastewater averaged about 4.33 and $1.70\;{\mu}g/L$, respectively. In addition, the removal rate average was 90% in the wastewater treatment plant. NP concentrations in the rivers did not exceed $1.0\;{\mu}g/L$, which are prescribed by environmental risk concentration in the USA and Europe. However, NP required continuous monitoring, which detected over $0.1\;{\mu}g/L$ in all river areas.

• Asian-Australasian Journal of Animal Sciences
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• v.24 no.5
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• pp.616-622
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• 2011

This study evaluated the fermentation characteristics and protein degradation dynamics of wet green tea grounds (WGTG) silage. The WGTG was ensiled with distilled water (control), or lactic acid bacteria (LAB), enzyme (E), formic acid (FA) and formaldehyde (FD) prior to ensiling. Three bag silos for each treatment were randomly opened at 0, 3, 7, 14, 28 and 60 days after anaerobic storage. For all the treatments, except for FA, there was a rapid decline in pH during the first 7 days of ensiling. LAB treatment had higher lactic acid content, lower ammonia-N ($NH_3$-N) and free-amino nitrogen (FAA-N) contents than other treatments (p<0.05). E treatment had higher lactic acid, water-soluble carbohydrates (WSC) and non-protein nitrogen (NPN) content than the control (p<0.05). FA treatment had higher $NH_3$-N and FAA-N content than the control (p<0.05). FD treatment had lower NPN and FAA-N content than the control, but it did not significantly inhibit the protein degradation when compared to LAB treatment (p>0.05). Results indicate that LAB treatment had the best effect on the fermentation characteristics and protein degradation of WGTG silage.

• Journal of IKEEE
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• v.15 no.1
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• pp.37-42
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• 2011

In this paper, the high-voltage novel devices have been fabricated by 0.35 um BCD (Bipolar-CMOS-DMOS) process. Electrical characteristics of 20 V level BJT device, 30/60 V HV-CMOS, and 40/60 V LDMOS are analyzed. Also, the vertical/lateral BJT with the high-current gain and LIGBT with the high-voltage are proposed. In the experimental results, vertical/lateral BJT has breakdown voltage of 15 V and current gain of 100. The proposed LIGBT with the high-voltage has breakdown voltage of 195 V, threshold voltage of 1.5 V, and Vce, sat of 1.65 V.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.1
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• pp.62-68
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• 1989

In this paper, Analog/Digital BCDMOS technology that the bipolar devices for driver applications CMOS devices for logic applications, and DMOS devices for high voltage applications is pressented. An optimized poly-gate p-well CMOS process is chosen to fabricate the BCDMOS, and the basic concepts to desigh these devices are to improve the characteristics of bipolar, CMOS & DMOS with simple process technology. As the results, $h_{FE}$ value is 320 (Ib-$10{\mu}A$ for bipolar npn transistor, and there is no short channel effects for CMOS devices which have Leff to $1.25{\mu}m$ and $1.35{\mu}m$ for n-channel and p-channel, respectively. Finally, breakdown voltage is obtained higher than 115V for DMOS device.

• Proceedings of the Korean Society for Food Science of Animal Resources Conference
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• 2004.10a
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• pp.334-336
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• 2004

본 연구는 우리나라 치즈 소비 추세가 피자와 가공치즈의 소비 한계가 드러나고 친환경, 건강 기능성, 순수 자연 치즈를 찾는 웰빙형 소비시대가 올 것을 대비하여 국산 자연치즈 소비증진을 위해 한국인의 취향과 기호성을 고려한 한국형 치즈제조기술 개발을 위해 수행되었다. 최근 기능성 식품재료로 주목 받는 들깻잎을 각 함량 별로(0.5%, 1.0%, 1.5%)첨가하여 치즈를 제조하고 숙성중 생균수, 가용성 질소화합물 (NCN), 12% TCA 가용성 질소화합물 (비단백태 질소화합물, NPN),산도, pH 및 전기영동상의 변화 그리고 관능성을 검사하여 다음과 같은 결과를 얻었다. 공시치즈의 숙성 중 NCN, NPN 의 변화는 대조구에 비하여 들깻잎 첨가비가 높은 치즈일수록 현저히 증가하는 경향을 나타냈다.

• Proceedings of the Korean Society for Food Science of Animal Resources Conference
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• 2004.05a
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• pp.295-297
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• 2004

본 연구는 우리나라 치즈 소비 추세가 피자와 가공치즈의 소비 한계가 드러나고 친환경, 기능성, 순수 자연 치즈 위주의 소비시대가 올 것을 전망하면서 국산 자연치즈 소비 촉진을 위해 한국인의 취향과 기호성을 고려한 한국적인 치즈 개발을 위해 수행되었다., 기능성 식품으로 주목 받는 오디즙을 각 함량 별로(5%, 10%, 15%) 첨가하여 치즈를 제조하고 제품의 숙성중의 생균수, 가용성 질소화합물 (NCN), 12% TCA 가용성 질소화합물 (비단백태 질소화합물, NPN),산도,pH및 전기영동상의 변화를 검사하여 다음과 같은 결과를 얻었다. 공시치즈의 NCN, $NPN^{2)}$의 변화는 대조구에 비하여 오디즙 첨가비가 높은 치즈 일수록 현저히 증가하는 경향을 나타냈다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.6
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• pp.712-717
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• 2014

The performance of npn SiGe HBT on thin film SOI is investigated at 32 nm technology node by applying body bias. An n-well is created underneath thin BOX to isolate the body biased SOI HBT from SOI CMOS. The results show that the HBT voltage gain and power gain can be programmed by applying body bias to the n-well. This HBT can be used in variable gain amplifiers that are widely used in the receiver chain of RF systems. The HBT is compatible with 32 nm FDSOI technology having 10 nm film thickness and 30 nm BOX thickness. As the breakdown voltage increases by applying the body bias, the SOI HBT with 3 V $V_{CE}$ has very high $f_tBV_{CEO}$ product (839 GHzV). The self heating performance of the proposed SOI HBT is studied. The high voltage gain and power gain (60 dB) of this HBT will be useful in designing analog/RF systems which cannot be achieved using 32 nm SOI CMOS (usually voltage gain is in the range of 10-20 dB).

• Journal of the Korean Institute of Telematics and Electronics
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• v.10 no.1
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• pp.9-17
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• 1973

This paper dealt with composition of current stable negatil'e resistance circuit based on Beam resistance of the tube SAMUEL SEBLY suggested. Beam resistance which is decreased by input current increment on definite region of current, accompanied generation of equivalent e. m. f on model circuit. With equivalent e. m. f there appeared increased current on circuit but decrease of terminal voltage. Bloc constructed by above concept induced transistorized circuit which have NPN and a PNP Transistor. Circuit operation predicted and calculated values of negative resistance are coincident with experimental results. A Circuit proposed on this paper sllowed good linearity on Ve-Ji characteristics.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.1
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• pp.137-142
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• 2008

The band-gap reference voltage generator which can be operated by low voltage is proposed in this paper. The proposed BGR circuit can be realized in logic process by using parasitic NPN BJTs because a $Low-V_T$ transistors are not necessary. The proposed BGR circuit is designed and fabricated using $0.18{\mu}m$ triple-well process. The mean voltage of measured VREF is 0.72V and the three sigma$(3{\sigma})$ is 45.69mv.