Journal of IKEEE (전기전자학회논문지)

Institute of Korean Electrical and Electronics Engineers (한국전기전자학회)
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A Study on the Fabrication and Electrical Characteristics of High-Voltage BCD Devices

고내압 BCD 소자의 제작 및 전기적 특성에 관한 연구

  • Kim, Kwang-Soo (Sogang Institute of Advanced Technology, Sogang University) ;
  • Koo, Yong-Seo (School of Electrical and Electronics Engineering, Dankook University)
  • 김광수 (서강대학교 서강미래기술원) ;
  • 구용서 (단국대학교 전자전기공학과)
  • Received : 2011.03.05
  • Published : 2011.03.31
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Abstract

In this paper, the high-voltage novel devices have been fabricated by 0.35 um BCD (Bipolar-CMOS-DMOS) process. Electrical characteristics of 20 V level BJT device, 30/60 V HV-CMOS, and 40/60 V LDMOS are analyzed. Also, the vertical/lateral BJT with the high-current gain and LIGBT with the high-voltage are proposed. In the experimental results, vertical/lateral BJT has breakdown voltage of 15 V and current gain of 100. The proposed LIGBT with the high-voltage has breakdown voltage of 195 V, threshold voltage of 1.5 V, and Vce, sat of 1.65 V.

본 논문에서는 0.35 um BCD 공정을 통한 고내압 BCD 소자와 새로운 구조의 BCD 소자를 제작하여 전기적 특성을 분석하였다. 20 V급 BJT 소자, 30/60 V급 HV-CMOS, 40/60 V급 LDMOS 소자의 전기적 특성을 분석하고, 동일 공정을 통해 높은 전류 이득을 갖는 수직/수평형 NPN BJT와 고내압 특성의 LIGBT 소자를 제안하였다. 제안된 수직/수평형 NPN BJT의 항복전압은 15 V, 전류이득은 100으로 측정되었으며, 고내압 특성의 LIGBT의 항복전압은 195 V, 문턱전압은 1.5 V, Vce,sat은 1.65 V로 측정 되었다.

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References

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