• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.12
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• pp.1-9
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• 2000

A new method, the external resistance method (ERM method), is proposed for accurate extraction of the gate bias-dependent effective channel carrier mobility (${\mu}_{eff}$) and separated parasitic source/drain resistances ($R_S$ and $R_D$) of n-channel MOSFET's. The proposed ERM method is applied to n-channel LDD MOSFETs with two different gate lengths ($W_m/L_m=30{\mu}m/0.6{\mu}m,\;30{\mu}m/1{\mu}m$) in the linear mode of current-voltage characteristics ($I_D-V_{GS},\;V_{DS}$). We also considered gate voltage dependence of separated $R_2$ and $R_D$ in the accurate modeling and extraction of effective channel carrier mobility. Good agreement of experimental data is observed in submicron n-channel LDD MOSFETs. Combining with capacitance-voltage characteristics, the ERM method is expected to be very useful for accurate and efficient extraction of ${\mu}_{eff},\;R_D,\;R_S$, and other characteristic parameters in both symmetric and asymmetric structure MOSFET's in which parasitic resistances are critical to the improvement of high speed performance and reliability.

• Communications of the Korean Mathematical Society
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• v.9 no.2
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• pp.491-502
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• 1994

Many problems arising in science and engineering require the numerical solution of a system of n nonlinear equations in n unknowns: (1) given F : $R^{n}$ $\rightarrow$ $R^{n}$ , find $x_{*}$ $\epsilon$ $R^{n}$ / such that F($x_{*}$) = 0. Nonlinear problems are generally solved by iteration. Davidson [3] and Broyden [1] introduced the methods which had led to a large amount of research and a class of algorithm. This work has been called by the quasi-Newton methods, secant updates, or modification methods. Newton's method is the classical method for the problem (1) and quasi-Newton methods have been proposed to circumvent computational disadvantages of Newton's method.(omitted)

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.4
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• pp.478-483
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• 2014

We propose a new method which can extract the information about the electronic traps in the semi-insulating GaN buffer of AlGaN/GaN heterostructure field-effect transistors (HFETs) using a simple test structure. The proposed method has a merit in the easiness of fabricating the test structure. Moreover, the electric fields inside the test structure are very similar to those inside the actual transistor, so that we can extract the information of bulk traps which directly affect the current collapse behaviors of AlGaN/GaN HEFTs. By applying the proposed method to the GaN buffer structures with various unintentionally doped GaN channel thicknesses, we conclude that the incorporated carbon into the GaN back barrier layer is the dominant origin of the bulk trap which affects the current collapse behaviors of AlGaN/GaN HEFTs.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.7
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• pp.712-722
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• 1992

Several voltage instability/collapse problems that have occurred in the electric utility industry worldwide have gained the attention of engineers and researchers of electric power systems. This paper proposes an effective calculation scheme of the extreme loading point and nose curves(P-V curves) using modified Newton-Raphson(N-R) load flow method and the Continuation Method. This method provides detail and visual information of the power system voltage profile and operating margin ro operators and planners. In this paper, a modified load flow claculation method for ill-conditioned power systems is introduced for the purpose of seeking more precise load flow solutions and nose curves, and the Continuation Method is also used as a part of the solution algorithm for the calculation of extreme loading point and nose curves. The conventional polar coordinate based N-R load flow program is modified to avoid numerical difficulties caused by the singularity of the Jacobian matrix occuring in the vicinity of extreme loading point of heavily loaded systems. Application results of the proposed method to Klos-Kerner 11-bus system and modified IEE-30-bus system are presented to assure the usefulness of the approach.

• Journal of the Korean Mathematical Society
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• v.59 no.3
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• pp.439-448
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• 2022

For a natural number n, let R(n) denote the number of representations of n as the sum of one square and five cubes of primes. In this paper, it is proved that the anticipated asymptotic formula for R(n) fails for at most $O(N^{{\frac{4}{9}+{\varepsilon}})$ positive integers not exceeding N.

• Journal of the Korean Chemical Society
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• v.44 no.1
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• pp.30-36
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• 2000

Upon Pd(0)-catalyzed coupling reaction of (2R)-2-(N,N-ditosylimido)-3-butenyl methyl malonate (4) which was selected for the total synthesis of A-factor, (3R)-2-(6-methylheptanoyl)-3-hydroxy methyl-4-buttinolide (1), an unexpected 14-membered cyclic compound, bis(2-methoxycabonyl-(4E)-hexenolide) (15) was obtained. The structure of this compound was conformed by X-ray crystallography. This result implies that this method can be applied the synthesis of various size of symmetrical macrocyclic compounds.

• Communications of the Korean Mathematical Society
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• v.28 no.2
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• pp.319-333
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• 2013

Using the fixed point method, we prove the generalized Hyers-Ulam-Rassias stability of the following functional equation in multi-Banach spaces: $${\sum_{1{\leq}i_<j{\leq}n}}\;f(\frac{r_ix_i+r_jx_j}{k})=\frac{n-1}{k}{\sum_{i=1}^n}r_if(x_i)$$.

• Journal of the Chungcheong Mathematical Society
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• v.16 no.2
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• pp.23-30
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• 2003

In this note, we introduce the concept of the modulus of a curve family in $R^n$ and examine some basic properties. And we study the boundary behavior of quasiconformal mappings on a domain $D{\subset}\bar{R}^n$ and present some geometric applications.

• Communications of the Korean Mathematical Society
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• v.12 no.2
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• pp.393-401
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• 1997

Let $A_1,A_2,\cdots,A_m$ and $B_1,B_2,\cdots,B_n$ be two sequences of events on a given probability space. Let $X_m$ and $Y_n$, respectively, be the number of those $A_i$ and $B_j$, which occur we establish new upper and lower bounds on the probability $P(X=r, Y=t)$ which improve upper bounds and classical lower bounds in terms of the bivariate binomial moment $S_{r,t},S_{r+1,t},S_{r,t+1}$ and $S_{r+1,t+1}$.

• Journal of Korean Tunnelling and Underground Space Association
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• v.5 no.4
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• pp.401-409
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• 2003

Recently, the development of underground structures is to be inevitably necessary due to the increase in population and traffic volume that has caused to the limit of urban land use and the heavy traffic jams. Therefore, underground structures such as subway, underground shopping centers, lifeline facilities and so on, have been increasingly constructed, On the other hand, several social problems have occurred during construction, i.e., ground subsidence, noise, and vibration. Therefore, safer and more beneficial methods for underground construction are on the demand. In this research, N.T.R.(New Tubular Roof) method has been modified and utilized for solving those problems and overcoming the difficulties connected with the bored tunnel construction of large underground openings in unfavorable ground, often under the water table, and with overburdens that are too shallow to solve problems of stability using traditional methods. The N.T.R. method has been modified to suit for Korean geotechnical conditions, and was made up for the weak points-the water leakage from walls and tops, the maintenance and the lack of stability-of the conventional methods. This paper dealt with the features and the applicability of N.T.R. Method based on the results from numerical analysis and data from in-situ monitoring system.