Investigation of Buffer Traps in AlGaN/GaN Heterostructure Field-Effect Transistors Using a Simple Test Structure |
Jang, Seung Yup
(IGBT Part, System IC R&D Laboratory, LG Electronics)
Shin, Jong-Hoon (IGBT Part, System IC R&D Laboratory, LG Electronics) Hwang, Eu Jin (IGBT Part, System IC R&D Laboratory, LG Electronics) Choi, Hyo-Seung (School of Electrical and Electronics Engineering, Chung-Ang University) Jeong, Hun (School of Electrical and Electronics Engineering, Chung-Ang University) Song, Sang-Hun (School of Electrical and Electronics Engineering, Chung-Ang University) Kwon, Hyuck-In (School of Electrical and Electronics Engineering, Chung-Ang University) |
1 | A. F. Wright, "Substitutional and interstitial carbon in wurtzite GaN," J. Appl. Phys., vol. 92, no. 5, pp. 2575-2585, Sep. 2002. DOI |
2 | J. Joh and J. del Alamo, "A current-transient methodology for trap analysis for GaN high electron mobility transistors," IEEE Trans. Electron Devices, vol. 58, no. 1, pp. 132-140, Jan. 2011. DOI ScienceOn |
3 | D. Bisi, M. Meneghini, C. de Santi, A. Chini, M. Dammann, P. Bruckner, M. Mikulla, G. Meneghesso, and E. Zanoni, "Deep-level characterization in GaN HEMTs-Part I: Advantages and limitations of drain current transient measurements," IEEE Trans. Electron Devices, vol. 60, no. 10, pp. 3166-3175, Oct. 2013. DOI ScienceOn |
4 | P. Boguslawski and J. Bernholc, "Doping properties of C, Si, Ge impurities in GaN and AlN," Phys. Rev. B, vol. 56, no. 15, pp. 9496-9505, Jul. 1997. DOI ScienceOn |
5 | S. Arulkumaran, G. I. Ng, and Z. H. Liu, "Effect of gate-source and gate-drain Si3N4 passivation on current collapse in AlGaN/GaN high-electronmobility transistors on silicon," Appl. Phys. Lett., vol. 90, no. 17, pp. 173504-1-173504-3, Apr. 2007. DOI |
6 | M. J. Uren, J. Möreke, and M. Kuball, "Buffer design to minimize current collapse in GaN/AlGaN HFETs," IEEE Trans. Electron Devices, vol. 59, no. 12, pp. 3327-3333, Dec. 2012. DOI ScienceOn |
7 | Z. Q. Fang, B. Claflin, D. C. Look, D. S. Green, R. Vetury, "Deep traps in AlGaN/GaN heterostructures studied by deep level transient spectroscopy: Effect of carbon concentration in GaN buffer layers," J. Appl. Phys., vol. 108, no. 6, pp. 063706-1-063706-6, Sep. 2010. DOI ScienceOn |
8 | M. Marso, M. Wolter, P. Javorka, P. kordos, and H. Luth, "Investigation of buffer traps in an AlGaN/GaN/Si high electron mobility transistor by backgating current deep level transient spectroscopy," Appl. Phys. Lett., vol. 82, no. 4, pp. 633-635, Jan. 2003. DOI ScienceOn |
9 | M. J. Uren, M. Silverstri, M. Casar, G. A. M. Hurkx, J. A. Croon, J. Sonsky, and M. Kuball, "Intentionally carbon-doped AlGaN/GaN HEMTs: Necessaty for vertical leakage paths," IEEE Electron Device Lett., vol. 35, no. 3, pp. 327-329, Mar. 2014. DOI ScienceOn |
10 | J. Joh and J. del Alamo, "Impact of electrical degradation on trapping characteristics of GaN high electron mobility transistors," in IEDM Tech. Dig., 2008, pp. 461-464. |
11 | M. Ishida, T. Ueda, T. Tanaka, and D. Ueda, "GaN on Si technologies for power switching devices," IEEE Trans. Electron Devices, vol. 60, no. 10, pp. 3053-3059, Oct. 2013. DOI ScienceOn |
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