JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Investigation of Buffer Traps in AlGaN/GaN Heterostructure Field-Effect Transistors Using a Simple Test Structure

  • Jang, Seung Yup (IGBT Part, System IC R&D Laboratory, LG Electronics) ;
  • Shin, Jong-Hoon (IGBT Part, System IC R&D Laboratory, LG Electronics) ;
  • Hwang, Eu Jin (IGBT Part, System IC R&D Laboratory, LG Electronics) ;
  • Choi, Hyo-Seung (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Jeong, Hun (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Song, Sang-Hun (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Kwon, Hyuck-In (School of Electrical and Electronics Engineering, Chung-Ang University)
  • Received : 2012.09.22
  • Accepted : 2013.01.28
  • Published : 2014.08.30
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Abstract

We propose a new method which can extract the information about the electronic traps in the semi-insulating GaN buffer of AlGaN/GaN heterostructure field-effect transistors (HFETs) using a simple test structure. The proposed method has a merit in the easiness of fabricating the test structure. Moreover, the electric fields inside the test structure are very similar to those inside the actual transistor, so that we can extract the information of bulk traps which directly affect the current collapse behaviors of AlGaN/GaN HEFTs. By applying the proposed method to the GaN buffer structures with various unintentionally doped GaN channel thicknesses, we conclude that the incorporated carbon into the GaN back barrier layer is the dominant origin of the bulk trap which affects the current collapse behaviors of AlGaN/GaN HEFTs.

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References

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