• 제목/요약/키워드: Multilayer film

검색결과 390건 처리시간 0.031초

Tribological properties of mono/multilayer LB molecular films (단층/다층 LB 분자막의 트라이볼로지 특성)

  • ;;G.K. Zhavnerko
    • Proceedings of the Korean Society of Precision Engineering Conference
    • /
    • 한국정밀공학회 2003년도 춘계학술대회 논문집
    • /
    • pp.211-214
    • /
    • 2003
  • The tribological properties of amphiphilic monolayers and composite multilayer on silicon surface were investigated using micro-tribometer and Auger Electron Spectroscopy. Langmuir-Blodgett (LB) monolayers from behenic acid. 2.4-heneicosanedione(HD) and its copper complex((HD)$_2$Cu) were fabricated on silicon surface and the composite multilayer of 5-bilayer of (HD)$_2$Cu was fabricated on the surface of octadecyltrichlorsilane (OTS) self-assembled monolayer(SAM). We observed that LB monolayers and the composite multilayer exhibited a steady and excellent friction response when compared with the OTS SAM. These LB mono and multilayer also showed much higher wear-resistance than the OTS SAM.

  • PDF

A Study on the Characteristics of NiInZnO/Ag/NiInZnO Multilayer Thin Films Deposited by RF/DC Magnetron Sputter According to the Thickness of Ag Insertion Layer (RF/DC 마그네트론 스퍼터로 제조한 NiInZnO/Ag/NiInZnO 다층박막의 Ag 금속 삽입층 두께 변화에 따른 특성 연구)

  • Kim, Nam-Ho;Kim, Eun-Mi;Heo, Gi-Seok;Yeo, In-Seon
    • The Transactions of The Korean Institute of Electrical Engineers
    • /
    • 제65권12호
    • /
    • pp.2014-2018
    • /
    • 2016
  • Transparent, conductive electrode films, showing the particular characteristics of good conductivity and high transparency, are of considerable research interest because of their potential for use in opto-electronic applications, such as smart window, photovoltaic cells and flat panel displays. Multilayer transparent electrodes, having a much lower electrical resistance than widely-used transparent conducting oxide electrodes, were prepared by using RF/DC magnetron sputtering system. The multilayer structure consisted of three layers, [NiInZnO(NIZO)/Ag/NIZO]. The optical and electrical properties of the multilayered NIZO/Ag/NIZO structure were investigated in relation to the thickness of each layer. The optical and electrical characteristics of multilayer structures have been investigated as a function of the Ag and NIZO film thickness. High-quality transparent conductive films have been obtained, with sheet resistance of $9.8{\Omega}/sq$ for Ag film thickness of 8 nm. Also the multilayer films of inserted Ag 8 nm thickness showed a high optical transmittance above 93% in the visible range. The electrical and optical properties of the new multilayer films were mainly dependent on the thickness of Ag insertion layer.

Characteristics of Al Films Prepared by Oblique Angle Deposition (빗각 증착으로 제조한 Al 박막의 특성)

  • Park, Hye-Sun;Yang, Ji-Hoon;Jung, Jae-Hun;Song, Min-A;Jeong, Jae-In
    • Journal of the Korean institute of surface engineering
    • /
    • 제45권3호
    • /
    • pp.111-116
    • /
    • 2012
  • Oblique angle deposition (OAD) is a physical vapor deposition method which utilizes non-normal angles between the substrate and the vaporizing source. It has been known that tilting the substrate changes the properties of the film deposited on it, which was thought to be a result of morphological change of the film. In this study, OAD has been applied to prepare single and multilayer Al films by magnetron sputtering. The magnetron sputtering source of 4 inch diameter was used to deposit the films. Al films have been deposited on Si wafers and cold-rolled steel sheets. The multilayer films were prepared by changing the tilting angle upside down at each layer interval, which means that when the first layer was deposited at an angle of $+45^{\circ}$, the second layer was deposited at an angle of $-45^{\circ}$, and vice versa. The microstructure, surface roughness and reflectance of the films were investigated using a scanning electron microscope, a surface profiler and a spectrophotometer, respectively. The corrosion resistance was measured and compared using the salt spray test. The single layer film prepared at an oblique angle of $60^{\circ}$ prepared at other angles. However, for the multilayer films, the film prepared at an oblique angle of $45^{\circ}$ showed the most compact and featureless structure. The multilayer films were found to exhibit higher corrosion resistance than the single layer films.

Structural and Optical Properties of Multilayer Films of IGZO / Ag / IGZO for Low Emissivity Applications (Low-e용 산화물 다층박막 IGZO/Ag/IGZO의 구조적, 광학적 특성 분석)

  • Wang, Hong Rae;Kim, Hong Bae;Lee, Sang Yeol
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • 제26권4호
    • /
    • pp.321-324
    • /
    • 2013
  • In this study, The RF magnetron sputter and evaporator was on glass substrates 30 mm ${\times}$ 30 mm OMO multilayer thin film structure is applied to the low-e. Structural and optical properties, a thin film was produced, the variable was placed into a variable deposition time of the oxide layer. According to the XRD measurement results there is no peak that satisfies the Bragg's law ($2dsin{\theta}=n{\lambda}$) which confirmed that it is an amorphous structure. RMS value of the results of the AFM measurement, has a roughness of less than 2 nm. transmittance measurements results, visible light region an average 80%, IR region 40% showed.

Low Emissivity Property of Amorphous Oxide Multilayer (SIZO/Ag/SIZO) Structure

  • Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
    • /
    • 제18권1호
    • /
    • pp.13-15
    • /
    • 2017
  • Low emissivity glass for high transparency in the visible range and low emissivity in the IR (infrared) range was fabricated and investigated. The multilayers were have been fabricated, and consisted of two outer oxide layers and a middle layer of Ag as a metal layer. Oxide layers were formed by rf sputtering and metal layers were formed using by an evaporator at room temperature. SiInZnO (SIZO) film was used as an oxide layer. The OMO (oxide-metaloxide) structures of SIZO/Ag/SIZO were analyzed by using transmittance, AFM (atomic force microscopye), and XRD (X-ray diffraction). The OMO multilayer structure was designed to investigate the effect of Ag layer thickness on the optical property of the OMO structure.

Soft Lithographic Patterning Method for Flexible Graphene-based Chemical Sensors with Heaters

  • Kang, Min-a;Jung, Min Wook;Myung, Sung;Song, Wooseok;Lee, Sun Suk;Lim, Jongsun;Park, Chong-Yun;An, Ki-Seok
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
    • /
    • pp.176.2-176.2
    • /
    • 2014
  • In this work, we demonstrated that the fabrication of flexible graphene-based chemical sensor with heaters by soft lithographic patterning method [1]. First, monolayer and multilayer graphene were prepared by thermal chemical vapor deposition transferred onto SiO2 / Si substrate in order to fabrication of patterned-sensor and -heater. Second, patterned-monolayer and multilayer graphene were detached through soft lithography process, which was transferred on top and bottom sides of PET film. Third, Au / Ti (Thickness : 100/30 nm) electrodes were deposited end of the patterned-graphene line by sputtering system. Finally, we measured sensor properties through injection of NO2 and CO2 gas on different temperature with voltage change of graphene heater.

  • PDF

Self-Assembled $TiO_2$ and Polyelectrolyte Multilayer as OTFT Gate Insulator

  • Moon, Zi-Su;Kim, Hong-Doo
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
    • /
    • pp.1422-1424
    • /
    • 2009
  • Modified self-assembled $TiO_2$ and polyelectrolyte multilayer film have been used as OTFT insulator. Both films were used as gate insulator and their thickness were reduced to the order of 10nm. The operating voltage of OTFT was substantially reduced due to nanoscale thickness of titanium oxide and polyelectrolyte multilayer. Pentacene-based OTFT characteristics will be discussed.

  • PDF

Ferroelectric, Leakage Current Properties of BiFeO3/Pb(Zr0.52Ti0.48)O3 Multilayer Thin Films Prepared by Chemical Solution Deposition (Chemical Solution Deposition 방법을 이용한 BiFeO3/Pb(Zr0.52Ti0.48)O3 다층박막의 전기적 특성에 대한 연구)

  • Cha, J.O.;Ahn, J.S.;Lee, K.B.
    • Journal of the Korean Vacuum Society
    • /
    • 제19권1호
    • /
    • pp.52-57
    • /
    • 2010
  • $BiFeO_3/Pb(Zr_{0.52}Ti_{0.48})O_3$(BFO/PZT) multilayer thin films have been prepared on a Pt/Ti/$SiO_2$/Si(100) substrate by chemical solution deposition. BFO single layer, BFO/PZT bilayer and multilayer thin films were studied for comparison. X-ray diffraction analysis showed that the crystal structure of all films was multi-orientated perovskite phase without amorphous and impurity phase. The leakage current density at 500 kV/cm was reduced by approximately four and five orders of magnitude by bilayer and multilayer structure films, compared with BFO single layer film. The low leakage current density leads to saturated P-E hysteresis loops of bilayer and multilayer films. In BFO/PZT multlayer film, saturated remanent polarization of $44.3{\mu}C/cm^2$ was obtained at room temperature at 1 kHz with the coercive field($2E_c$) of 681.4 kV/cm.

Properties of Indium Tin Oxide Multilayer Fabricated by Glancing Angle Deposition Method

  • Oh, Gyujin;Lee, Kyoung Su;Kim, Eun Kyu
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
    • /
    • pp.367-367
    • /
    • 2013
  • Commercial applications of indium tin oxide (ITO) can be separated into two useful areas. As it is perceived to bear electrical properties and optical transparency at once, its chance to apply to promising fields, usually for an optical device, gets greater in the passing time. ITO is one of the transparent conducting oxides (TCO), and required to carry the relative resistance less than $10^{-3}{\Omega}$/cm and transmittances over 80 % in the visible wavelength of light. Because ITO has considerable refractive index, there exist applications for anti-reflection coatings. Anti-reflection properties require gradual change in refractive index from films to air. Such changes are obtained from film density or nano-clustered fractional void. Glancing angle deposition (GLAD) method is a well known process for adjusting nanostructure of the films. From its shadowing effects, GLAD helps to deposit well-controlled porous films effectively. In this study, we are comparing the reference sample to samples coated with controlled ITO multilayer accumulated by an e-beam evaporation system. At first, the single ITO layer samples are prepared to decide refractive index with ellipsometry. Afterwards, ITO multilayer samples are fabricated and fitted by multilayer ellipsometric model based on single layer data. The structural properties were measured by using atomic force microscopy (AFM), and by scanning X-ray diffraction (XRD) measurements. The ellipsometry was used to determine refractive indices and extinction coefficient. The optical transmittance of the film was investigated by using an ultraviolet-visible (UV-Vis) spectrophotometer.

  • PDF

Improved Electrical Properties of Indium Gallium Zinc Oxide Thin-Film Transistors by AZO/Ag/AZO Multilayer Electrode

  • No, Young-Soo;Yang, Jeong-Do;Park, Dong-Hee;Kim, Tae-Whan;Choi, Ji-Won;Choi, Won-Kook
    • Journal of Sensor Science and Technology
    • /
    • 제22권2호
    • /
    • pp.105-110
    • /
    • 2013
  • We fabricated an a-IGZO thin film transistor (TFT) with AZO/Ag/AZO transparent multilayer source/drain contacts by rf magnetron sputtering. a-IGZO TFT with AZO/Ag/AZO multilayer S/D electrodes (W/L = 400/50 ${\mu}m$) showed a subs-threshold swing of 3.78 V/dec, a minimum off-current of $10^{-12}$ A, a threshold voltage of 0.41 V, a field effect mobility of $10.86cm^2/Vs$, and an on/off ratio of $9{\times}10^9$. From the ultraviolet photoemission spectroscopy, it was revealed that the enhanced electrical performance resulted from the lowering of the Schottky barrier between a-IGZO and Ag due to the insertion of an AZO layer and thus the AZO/Ag/AZO multilayer would be very appropriate for a promising S/D contact material for the fabrication of high performance TFTs.