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http://dx.doi.org/10.5369/JSST.2013.22.2.105

Improved Electrical Properties of Indium Gallium Zinc Oxide Thin-Film Transistors by AZO/Ag/AZO Multilayer Electrode  

No, Young-Soo (Interface Research Center, Korea Insitute of Science and Technology)
Yang, Jeong-Do (Department of Physics, Yonsei University)
Park, Dong-Hee (Interface Research Center, Korea Insitute of Science and Technology)
Kim, Tae-Whan (Advanced Semiconductor Research Center, Division of Electrical and Computer Engineering, Hanyang University)
Choi, Ji-Won (Electronic Materials Research Center, Korea Insitute of Science and Technology)
Choi, Won-Kook (Interface Research Center, Korea Insitute of Science and Technology)
Publication Information
Journal of Sensor Science and Technology / v.22, no.2, 2013 , pp. 105-110 More about this Journal
Abstract
We fabricated an a-IGZO thin film transistor (TFT) with AZO/Ag/AZO transparent multilayer source/drain contacts by rf magnetron sputtering. a-IGZO TFT with AZO/Ag/AZO multilayer S/D electrodes (W/L = 400/50 ${\mu}m$) showed a subs-threshold swing of 3.78 V/dec, a minimum off-current of $10^{-12}$ A, a threshold voltage of 0.41 V, a field effect mobility of $10.86cm^2/Vs$, and an on/off ratio of $9{\times}10^9$. From the ultraviolet photoemission spectroscopy, it was revealed that the enhanced electrical performance resulted from the lowering of the Schottky barrier between a-IGZO and Ag due to the insertion of an AZO layer and thus the AZO/Ag/AZO multilayer would be very appropriate for a promising S/D contact material for the fabrication of high performance TFTs.
Keywords
a-IGZO TFT; AZO/Ag/AZO transparent electrode; Field effect mobility; Schottky barrier;
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