Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
권호 표지
DOI QR코드

DOI QR Code

Improved Electrical Properties of Indium Gallium Zinc Oxide Thin-Film Transistors by AZO/Ag/AZO Multilayer Electrode

  • No, Young-Soo (Interface Research Center, Korea Insitute of Science and Technology) ;
  • Yang, Jeong-Do (Department of Physics, Yonsei University) ;
  • Park, Dong-Hee (Interface Research Center, Korea Insitute of Science and Technology) ;
  • Kim, Tae-Whan (Advanced Semiconductor Research Center, Division of Electrical and Computer Engineering, Hanyang University) ;
  • Choi, Ji-Won (Electronic Materials Research Center, Korea Insitute of Science and Technology) ;
  • Choi, Won-Kook (Interface Research Center, Korea Insitute of Science and Technology)
  • Received : 2013.02.18
  • Accepted : 2013.03.14
  • Published : 2013.03.31
Download PDF
⟨ Previous Next ⟩

Abstract

We fabricated an a-IGZO thin film transistor (TFT) with AZO/Ag/AZO transparent multilayer source/drain contacts by rf magnetron sputtering. a-IGZO TFT with AZO/Ag/AZO multilayer S/D electrodes (W/L = 400/50 ${\mu}m$) showed a subs-threshold swing of 3.78 V/dec, a minimum off-current of $10^{-12}$ A, a threshold voltage of 0.41 V, a field effect mobility of $10.86cm^2/Vs$, and an on/off ratio of $9{\times}10^9$. From the ultraviolet photoemission spectroscopy, it was revealed that the enhanced electrical performance resulted from the lowering of the Schottky barrier between a-IGZO and Ag due to the insertion of an AZO layer and thus the AZO/Ag/AZO multilayer would be very appropriate for a promising S/D contact material for the fabrication of high performance TFTs.

Keywords

References

  1. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors", Nature, Vol. 432, pp. 488-492, 2004. https://doi.org/10.1038/nature03090
  2. K. Nomura, A. Takagi, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, "Amorphous oxide semiconductors for high-performance flexible thin-film transistors", Jpn. J. Appl. Phys., Vol. 45, pp. 4303-4308, 2006. https://doi.org/10.1143/JJAP.45.4303
  3. S.-H. K. Park, C.-S. Hwang, M. Ryu, S. Yang, C. Byun, J. Shin, J.-I. Lee, K. Lee, M. S. Oh, and S. Im, "Trans-parent and photo-stable ZnO thin-film transistors to drive an active matrix organic-lightemitting- diode display panel", Adv. Mater., Vol. 21, pp. 678-682, 2009. https://doi.org/10.1002/adma.200801470
  4. H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, "High-mobility thin-film transistor with amorphous $InGaZnO_4$ channel Fabricated by room temperature rfmagnetron sputtering", Appl. Phys. Lett., Vol. 89, p. 112123, 2006. https://doi.org/10.1063/1.2353811
  5. J.-S. Park, J. K. Jeong, Y.-G. Mo, H. D. Kim, and S.-I. Kim,"Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment", Appl. Phys. Lett., Vol. 90, p. 262106, 2007. https://doi.org/10.1063/1.2753107
  6. P. Barquinha, A. M. Vila, G. GonCalves, L. Pereira, R. Martins, J. R. Morante, and E. Fortunato, "Gallium- Indium-Zinc-Oxide-based thin-film transistors: influence of the source/drain material", IEEE Trans. Electron Devices, Vol. 55, pp. 954-960, 2008. https://doi.org/10.1109/TED.2008.916717
  7. J. Park, C. Kim, S. Kim, I. Song, D. Kang, H. Lim, H. Yin, R. Jung, and E. Lee, "Source/drain seriesresistance effects in amorphous gallium-indium zincoxide thin film transistors", IEEE Electron Device Lett., Vol. 29, pp. 879-881, 2008. https://doi.org/10.1109/LED.2008.2000815
  8. W. Lim, S. Kim, Y.-L. Wang, J. W. Lee, D. P. Norton, S. J. Pearton, F. Ren, and I. I. Kravchenko, "Highperformance indium gallium zinc oxide transparent thin-film transistors fabricated by radio-frequency sputtering", J. Electrochem. Soc., Vol. 155, pp. H383- H385, 2008. https://doi.org/10.1149/1.2903294
  9. J. H. Na, M. Kitamura, and Y. Arakawa, "High fieldeffect mobility amorphous InGaZnO transistors with aluminum electrodes", Appl. Phys. Lett., Vol. 93, p. 063501, 2008. https://doi.org/10.1063/1.2969780
  10. J. D. Yang, S. H. Cho, T. W. Hong, D. I. Son, D. H. Park, K. H. Yoo, and W. K. Choi, "Organic photovoltaic cells fabricated on a $SnO_x/Ag/SnO_x$ multilayer transparent conducting electrode", Thin Solid Films, Vol. 520, pp. 6215-6220, 2012. https://doi.org/10.1016/j.tsf.2012.05.029
  11. S. Luan and G.W. Neudeck, "An experimental study of the source/drain parasitic resistance effects in amorphous silicon thin film transistors", J. Appl. Phys., Vol. 72, pp. 766-772, 1992. https://doi.org/10.1063/1.351809
  12. Y. Shimura, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, "Specific contact resistances between amorphous oxide semiconductor In-Ga-Zn-O and metallic electrodes", Thin Solid Films, Vol. 516, pp. 5899-5902, 2008. https://doi.org/10.1016/j.tsf.2007.10.051
  13. C. Avis, S. H. Kim, J. H. Hur, J. Jang, and W. I. Milne, "Coplanar ZnO thin-film transistor using boron ion doped source/drain contacts", Electrochem. Solid State Lett., Vol. 12, pp. J93-J95, 2009. https://doi.org/10.1149/1.3184585

Cited by

  1. Memristors Using Solution-Based IGZO Nanoparticles vol.2, pp.11, 2017, https://doi.org/10.1021/acsomega.7b01167
  2. Bending stability of flexible amorphous IGZO thin film transistors with transparent IZO/Ag/IZO oxide–metal–oxide electrodes vol.688, 2016, https://doi.org/10.1016/j.jallcom.2016.07.169
  3. Enhanced Light Extraction from p-Si Nanowires/n-IGZO Heterojunction LED by Using Oxide–Metal–Oxide Structured Transparent Electrodes vol.121, pp.12, 2017, https://doi.org/10.1021/acs.jpcc.7b00674
  4. Photoelectron spectroscopy study of thin Ag films deposited on to amorphous In–Ga–Zn–O surface vol.570, 2014, https://doi.org/10.1016/j.tsf.2014.08.043