• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.21 no.3
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• pp.493-501
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• 2012

A rotational force generator for molten metal is developed using a linear motor design technology. Also, the developed device is applied to reproduce aluminum scraps and easy to control the rotate, stop, and forward and reverse rotation of molten metal. In addition, the developed device improves the melting speed and reproduction rate about 250 (%) and 96-99 (%), respectively, compared to the conventional handmade methods. Because it generates almost no dusts, it can improve working environments in a factory. Also, it has no losses in energy because it directly melts scraps. The device generates small amounts of the loss in refractory materials and aluminum caused by its oxidation because the molten metal is continuously rotated in which the loss and oxidized aluminum are the problems in the conventional melting and holding furnaces. Thus, it is possible to extend the life of furnaces and to produce high quality aluminum products.

• Journal of the Korean Applied Science and Technology
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• v.19 no.4
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• pp.297-301
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• 2002

We investigated the effect of electron injection layer on the performance of organic light emitting devices (OLEDs). As an electron injection layer, the quinolate metal complexes were used. We optimized the device efficiency by varying the thickness of the quinolate metal complexes layer. The device with 1 nm of the quinolate metal complexes layer showed significant enhancement of the device performance and device lifetime. We also compared the effect of 8-hydroxyquinolinolatolithium (Liq) with that of bis(8-quinolinolato)-zinc ($Znq_{2}$) and 8-hydroxyquinolinolatosodium (Naq) as an electron injection layer. As a result, Liq is considered as a better materials for the electron injection layer than $Znq_{2}$ and Naq.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.4
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• pp.458-466
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• 2012

A Dual metal gate stack cylindrical/ surrounded gate MOSFET (DMGSA CGT/SGT MOSFET) has been proposed and an analytical model has been developed to examine the impact of this structure in suppressing short channel effects and in enhancing the device performance. It is demonstrated that incorporation of gate stack along with dual metal gate architecture results in improvement in short channel immunity. It is also examined that for DMGSA CGT/SGT the minimum surface potential in the channel reduces, resulting increase in electron velocity and thereby improving the carrier transport efficiency. Furthermore, the device has been analyzed at different bias point for both single material gate stack architecture (SMGSA) and dual material gate stack architecture (DMGSA) and found that DMGSA has superior characteristics as compared to SMGSA devices. The analytical results obtained from the proposed model agree well with the simulated results obtained from 3D ATLAS Device simulator.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.980-983
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• 2002

We investigated the effect of quinolate metal complex layer as an electron injection layer on the performance of OLEDs and optimized the device efficiency by varying from 0.5 to 10nm thickness of Liq layer. OLED with a structure of indium tin oxide/$\alpha$-napthylphenylbiphenyl(NPB,40nm)/tris-(8-hydroxyquinoline)aluminum(Alq3, 50nm)/Aluminum(150nm) were fabricated in sequence. The device with 1nm Quinolate metal complex layer showed significant enhancement of the device performance.

• Journal of IKEEE
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• v.19 no.4
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• pp.514-519
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• 2015

We propose the multiple gate structure of double gate junctionless metal oxide silicon field oxide transistor (JL MOSFET) for device optimization. Since different workfunction within multiple metal gates, electric potential nearby source and drain region is modulated in accordance with metal gate length. On current, off current and threshold voltage are influenced with gate structure and make possible to meet some device specification. Through the device simulation work, performance optimization of double gate JL MOSFETs are introduced and investigated.

• Journal of Welding and Joining
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• v.32 no.5
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• pp.80-86
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• 2014

We have successfully fabricated high strengthening Cu/STS/Cu 3 layered clad metal of $70kgf/mm^2$ grade for electric device lead frame, and investigated thermal effect of the mechanical and physical properties on the Cu/STS/Cu 3 layered clad metal lead frame material at different temperatures ranging from RT to $200^{\circ}C$. The fabricated clad metal shows a good thermal stability under 6% degrading of mechanical tensile strength and hardness change at $200^{\circ}C$ and also physical properties show stable thermal and electrical conductance of over $220W/m{\cdot}K$ and 58.44% IACS upto the $200^{\circ}$. The results confirm that fabricated high strengthening Cu/STS/Cu 3 layered clad metal can be applied for the high performed electrical lead frame devices.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.12 no.1
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• pp.79-88
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• 2014

We have developed a smart decontamination device for small-size radioactive scrap metal (SSRSM) necessarily generated from nuclear facilities. This is a multi-modal device such as rotation of magnetic field focusing on the region containing the abrasion pins placed around target and ultrasonic cleaner. Additionally, in order to increase the decontamination efficiency we have modified some configuration of the device so that it could work on them evenly and totally. With the Optimal operating for operation of the new device, we tried to decontaminate some various metal selected as a sample during 15 minutes sequentially using each method, magnetic and ultrasonic device. As a result, the range of decontamination factor has been highly increased to 18~56. After decontamination, all samples were found its activity less than background level.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.456-460
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• 1997

As device sizes are scaled to submicron dimensions, planarization technology becomes increasing1y important, both during device fabrication and during formation of multilevel interconnects and wiring. Chemical Mechanical Polishing (CMP) has emerged recently as a new processing technique for achieving a high degree of planarization for submicron VLSI applications. This paper is presented the results of CMP process window characterization studies for 0.35 micron process with 6 metal layers.

• Electronics and Telecommunications Trends
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• v.36 no.3
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• pp.34-40
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• 2021

For developing a switching device of a new concept that cannot be implemented with a semiconductor device, we introduce the Mott insulator-metal transition (IMT) phenomenon occurring out of the semiconductor regime, such as the temperature-driven IMT, the electric-field or voltage-driven IMT, the negative differential resistance (NDR)-IMT switching generated at constant current, and the NDR-based IMT-oscillation. Moreover, the possibilities of new concept IMT switching devices are briefly explained.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.4
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• pp.27-33
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• 2010

We have successfully demonstrated a high-pin-count and thin embedded-LSI package to realize next generation's mobile terminals. The following three design key points were applied: (i) Using Cu posts, (ii) Using the coreless structure, (iii) Using a Cu plate as the ground plane. In order to quantitatively determine the contribution of the three points, the five-stage process for reducing the number of metal layers is described by means of the electrical simulation. The point-(i) and (ii) are effective from the viewpoint of the power integrity (PI); that is, these points play important roles in reducing the number of metal layers, and especially the point-(ii) contributes at least twice as the point-(i). The point-(iii) is not effective in the PI, but has a few effects on the signal integrity (SI). For reducing the number of metal layers, we should, at first, pay attention whether the PI characteristics fulfill the specification, and then we should confirm the SI characteristics.