Browse > Article
http://dx.doi.org/10.12925/jkocs.2002.19.4.7

The Effect of Electron Injection Layer in Organic Electroluminescence Device Efficiency  

Choi, Kyung-Hoon (Department of Chemical Engineering, Hongik University)
Sohn, Byung-Chung (Department of Chemical Engineering, Hongik University)
Kim, Young-Kwan (Department of Science, College of Engineering, Hongik University)
Publication Information
Journal of the Korean Applied Science and Technology / v.19, no.4, 2002 , pp. 297-301 More about this Journal
Abstract
We investigated the effect of electron injection layer on the performance of organic light emitting devices (OLEDs). As an electron injection layer, the quinolate metal complexes were used. We optimized the device efficiency by varying the thickness of the quinolate metal complexes layer. The device with 1 nm of the quinolate metal complexes layer showed significant enhancement of the device performance and device lifetime. We also compared the effect of 8-hydroxyquinolinolatolithium (Liq) with that of bis(8-quinolinolato)-zinc ($Znq_{2}$) and 8-hydroxyquinolinolatosodium (Naq) as an electron injection layer. As a result, Liq is considered as a better materials for the electron injection layer than $Znq_{2}$ and Naq.
Keywords
electron injection layer; Lia$Znq_{2}$; Naq; efficiency; OLEDs;
Citations & Related Records
연도 인용수 순위
  • Reference
1 C. W. Tang and S. A. van Slyke, AppI. Phys. Lett., 51, 913 (1987)   DOI
2 H. Fujikawa, T. Mori, K. Noda, M. Ishii, S, Tokito, and Y. Taga, J. Lumi.. 87, 1177 (2000)   DOI   ScienceOn
3 Z. Liu, O. V, Salata, and N. Male, Synth Met., 128, 211 (2002)   DOI   ScienceOn
4 H. Heil, J. Steiger, S. Karg, and H. von Seggern, J. AppI. Phys., 89, 420 (2001)   DOI   ScienceOn
5 C. W. Tang, S. A. Van Slyhe, and C. H. Chen, J. Appl. Phys., 65, 3610 (1989)   DOI
6 L. S. Hung, C. W. Tang, and M. G. Mason, Appl. Phys. Lett., 70, 152 (1997)   DOI   ScienceOn
7 V. E. Choong, S. Shi, and J. Curless, AppI. Phys. Lett., 76, 958 (2000)   DOI   ScienceOn
8 C. Adachi, T. Tsutsui, and S. Saito, Appl. Phys. Lett., 57, 531 (1990)   DOI
9 M. Matsumera and Y. Jinde, AppI. Phys. Lett, 73, 2872 (1998)   DOI
10 Q. T. Le, L. Yan, and Y. Gao, J. AppI. Phys., 87, 375 (2000)   DOI   ScienceOn
11 T. Mori, H. Fujikawa, S. Tokito, and Y. Taga, Appl. Phys. Lett., 73, 2761 (1998)