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http://dx.doi.org/10.5573/JSTS.2012.12.4.458

Analytical Modeling and Simulation for Dual Metal Gate Stack Architecture (DMGSA) Cylindrical/Surrounded Gate MOSFET  

Ghosh, Pujarini (Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi, South Campus)
Haldar, Subhasis (Department of Physics, Motilal Nehru College, University of Delhi)
Gupta, R.S. (Department of Electronic and Communication engineering, Maharaja Agrasen Institute of Technology)
Gupta, Mridula (Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi, South Campus)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.12, no.4, 2012 , pp. 458-466 More about this Journal
Abstract
A Dual metal gate stack cylindrical/ surrounded gate MOSFET (DMGSA CGT/SGT MOSFET) has been proposed and an analytical model has been developed to examine the impact of this structure in suppressing short channel effects and in enhancing the device performance. It is demonstrated that incorporation of gate stack along with dual metal gate architecture results in improvement in short channel immunity. It is also examined that for DMGSA CGT/SGT the minimum surface potential in the channel reduces, resulting increase in electron velocity and thereby improving the carrier transport efficiency. Furthermore, the device has been analyzed at different bias point for both single material gate stack architecture (SMGSA) and dual material gate stack architecture (DMGSA) and found that DMGSA has superior characteristics as compared to SMGSA devices. The analytical results obtained from the proposed model agree well with the simulated results obtained from 3D ATLAS Device simulator.
Keywords
Dual metal gate stack architecture (DMGSA); surrounded/cylindrical gate MOSFET (CGT/SGT); short channel effects (SCEs);
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