• 한국정보통신학회논문지
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• 제14권11호
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• pp.2541-2547
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• 2010

본 논문에서는 대기 상태에서 저전력 eFuse OTP 메모리 IP틀 구현하기 위해 속도가 문제가 되지 않는 반복되는 블록 회로에서 1.2V 로직 트랜지스터 대신 누설 (off-leakage) 전류가작은 3.3V의 MV (Medium Voltage) 트랜지스터로 대체하는 설계기술을 제안하였다. 그리고 읽기 모드에서 RWL (Read Word-Line)과 BL의 기생하는 커패시턴스를 줄여 동작전류 소모를 줄이는 듀얼 포트 (Dual-Port) eFuse 셀을 사용하였다. 프로그램 전압에 대한 eFuse에 인가되는 프로그램 파워를 모의실험하기 위한 등가회로를 제안하였다. 하이닉스 90나노 CMOS 이미지 센서 공정을 이용하여 설계된 512비트 eFuse OTP 메모리 IP의 레이아웃 크기는 $342{\mu}m{\times}236{\mu}m$이며, 5V의 프로그램 전압에서 42개의 샘플을 측정한 결과 프로그램 수율은 97.6%로 양호한 특성을 얻었다. 그리고 최소 동작 전원 전압은 0.9V로 양호하게 측정되었다.

• 한국전기전자재료학회논문지
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• 제25권2호
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• pp.96-99
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• 2012

We fabricated fully depleted (FD) SOI-based 1T-DRAM cells with planar channel or recessed channel and the electrical characteristics were investigated. In particular, the dependence of memory operating mode on the channel structure of 1T-DRAM cells was evaluated. As a result, the gate induced drain leakage current (GIDL) mode showed a better memory property for planar type 1T-DRAM. On the other hand, the impact ionization (II) mode is more effective for recessed type.

• KEPCO Journal on Electric Power and Energy
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• 제8권2호
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• pp.93-96
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• 2022

The boiler tubes of thermal power plants are exposed to harsh environment of high temperature and high pressure, and the deterioration state of materials rapidly increases. In particular, parent material and welds of the materials used are subjected to a temperature change and various constraints, resulting in deformation and its growth, resulting in frequent leakage accidents caused by tube failure. The power plant checks the integrity of boiler tubes through non-destructive testing as it may act as huge costs loss and limitation of power supply during power station shutdown period due to boiler tube leakage. However, the current non-destructive testing is extremely limited in the field to detect micro cracks. In this study, the ability of metal magnetic memory technique to detect flaws of size that are difficult to inspect by the visual or general non-destructive methods was verified in the early stage of their occurrence.

• 대한임베디드공학회논문지
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• 제10권6호
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• pp.391-397
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• 2015

Nonvolatile memories in memory hierarchy have been investigated to reduce its energy consumption because nonvolatile memories consume zero leakage power in memory cells. One of the difficulties is, however, that the endurance of most nonvolatile memory technologies is much shorter than the conventional SRAM and DRAM technology. This has limited its usage to only the low levels of a memory hierarchy, e.g., disks, that is far from the CPU. In this paper, we study the use of a new type of nonvolatile memories - the Phase Change Memory (PCM) with a DRAM buffer system as the main memory. Our design reduced the total energy of a DRAM main memory of the same capacity by 80%. These results indicate that it is feasible to use PCM technology in place of DRAM in the main memory for better energy efficiency.

• International Journal of Internet, Broadcasting and Communication
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• 제12권1호
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• pp.90-94
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• 2020

Artificial intelligence (AI) is software that learns large amounts of data and provides the desired results for certain patterns. In other words, learning a large amount of data is very important, and the role of memory in terms of computing systems is important. Massive data means wider bandwidth, and the design of the memory system that can provide it becomes even more important. Providing wide bandwidth in AI systems is also related to power consumption. AlphaGo, for example, consumes 170 kW of power using 1202 CPUs and 176 GPUs. Since more than 50% of the consumption of memory is usually used by system chips, a lot of investment is being made in memory technology for AI chips. MRAM, PRAM, ReRAM and Hybrid RAM are mainly studied. This study presents various memory technologies that are being studied in artificial intelligence chip design. Especially, MRAM and PRAM are commerciallized for the next generation memory. They have two significant advantages that are ultra low power consumption and nearly zero leakage power. This paper describes a comparative analysis of the four representative new memory technologies.

• 대한전자공학회논문지SD
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• 제38권2호
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• pp.87-94
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• 2001

DRAM에서 셀 캐패시터의 누설 전류 영향을 고려하여 소프트 에러율을 예측하였다. DRAM의 동작 과정에서 누설 전류의 영향으로 셀 캐패시터는 전하량이 감소하고, 이에 따른 소프트 에러율을 DRAM의 각 동작 모드에 대하여 계산하였다. 누설 전류가 작을 경우에는 /bit mode가 소프트 에러에 취약했지만, 누설전류가 커질수록 memory 모드가 소프트 에러에 가장 취약함을 보였다. 실제 256M급 DRAM의 구조에 적용하여, 셀 캐패시턴스, bit line 캐패시턴스, sense amplifier의 입력 전압 감도들이 변화할 때 소프트 에러에 미치는 영향을 예측하였고, 이 결과들은 차세대 DARM 연구의 최적 셀 설계에 이용될 수 있다.

• 정보처리학회논문지A
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• 제18A권2호
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• pp.61-68
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• 2011

메모리 관련 오류 검출은 소프트웨어 개발 시 신뢰성 향상을 위해서 수행하여야 할 가장 중요한 작업중의 하나이다. 그러나 메모리 오류 검출을 위한 긴 디버깅 시간은 이동 통신 기기 개발 과정에 있어 큰 문제가 되었다. 대부분의 메모리 오류 검출 도구는 정적 분석 기법을 사용하나, 큰 용량의 동작 메모리로 인하여 이동 통신 기기 개발에는 사용되지 못하는 경우가 많다. 때문에 이동통신 기기 업체는 고품질의 기기를 빠른 시간 내에 개발하는 것이 매우 어려웠다. 이 논문에서 소개될 이동통신 기기 개발을 위한 Pin 기반의 메모리 오류 검출 도구인 PinMemcheck은 Pin의 이진 가공 기법과 간단한 데이터 구조를 적용하여 기준 설정 대비 약 1.5배의 실행 시간 부하 내에서 필수 오류들을 모두 검출해 내었다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권1호
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• pp.45-51
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• 2004

We have proposed a new shallow trench isolation (STI) process using flowable oxide (F-oxide) chemical vapor deposition (CVD) for DRAM application and it was successfully developed. The combination of F-oxide CVD and HDP CVD is thought to be the superior STI gap-filling process for next generation DRAM fabrication because F-oxide not only improves STI gap-filling capability, but also the reduced local stress by F-oxide in narrow trenches leads to decrease in junction leakage and gate induced drain leakage (GIDL) current. Finally, this process increased data retention time of DRAM compared to HDP STI. However, a serious failure occurred by symphonizing its structural dependency of deposited thickness with poor resistance against HF chemicals. It could be suppressed by reducing the flow time during F-oxide deposition. It was investigated collectively in terms of device yield. In conclusion, the combination of F-oxide and HDP oxide is the very promising technology for STI gap filling process of sub-100nm DRAM technology.

• Journal of electromagnetic engineering and science
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• 제7권4호
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• pp.147-153
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• 2007

This paper represents an analog predistortion linearizer for the high power amplifier with low memory effect. The high power amplifier is implemented using a 90-W peak envelope power(PEP) LDMOSFET at 2.14-GHz and an envelope short matching topology is applied at the active ports to minimize the memory effect. The analog predistortion circuit comprises the fundamental path and the cuber and quintic generating circuits, whose amplitudes and phases can be controlled independently. The predistortion circuit is tested for two-tone and wide-band code division multiple access(WCDMA) 4FA signals. For the WCDMA signal, the adjacent channel leakage ratios(ACLRs) at 5 MHz offset are improved by 12.4 dB at average output powers of 36 dBm and 42 dBm.

• 한국전자현미경학회:학술대회논문집
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• 한국현미경학회 2001년도 제32차 추계학술대회
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• pp.92-96
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• 2001