A study of leakage characteristics in silicided p+/n shallow junctions using transmission electron microscopy (TEM) coupled with selective chemical etching
- Choi, Chel-Jong (Department Materials Science and Engineering, Kwangju Institute Science and Technology) ;
- Seong, Tae-Yeon (Department Materials Science and Engineering, Kwangju Institute Science and Technology) ;
- Lee, Key-Min (Memory R&D Division, Hynix Semiconductor Inc.) ;
- Lee, Joo-Hyoung (Memory R&D Division, Hynix Semiconductor Inc.) ;
- Park, Young-Jin (Memory R&D Division, Hynix Semiconductor Inc.) ;
- Lee, Hi-Deok (Department Electronics Engineering, Chungnam National University)
- Published : 2001.11.01
Abstract
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