• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.3
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• pp.61-71
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• 2014

As the occupancy rate of the flash memory increases in the storage media market for the embedded system and the semi-conductor industry grows, the demand and supply of flash memory is increasing by a big margin. They are especially used in large quantity in the smart phones, tablets, PC, SSD and Soc(System on Chip) etc. The flash memory is divided into the NOR type and NAND type according to the cell arrangement structure and the NAND type is divided into the SLC(Single Level Cell) and MLC(Multi Level Cell) according to the number of bits that can be stored in each cell. Many tests have been performed on NOR type such as BIST(Bulit-In Self Test) and BIRA(Bulit-In Redundancy Analysis) etc, but there is little study on the NAND type. For the case of the existing BIST, the test can be proceeded using external equipments like ATE of high price. However, this paper is an attempt for the improvement of credibility and harvest rate of the system by proposing the BIST for the MLC NAND type flash memory of Finite State Machine structure on which the pattern test can be performed without external equipment since the necessary patterns are embedded in the interior and which uses the MLC NAND March(x) algorithm and pattern which had been proposed for the MLC NAND type flash memory.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.1
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• pp.64-72
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• 1993

We propose "algorithm MA" which can detect PSF that is the functional fault in RAM. This algorithm based on the restricted PSF(or neighborhood PSF) and can detect not only conventional stuck-at and transition faults but also SNPSF, PNPSF and partially ANPSF. The time complexity of "algorithm MA" has 1536xP(P=no. of partition). We propose total BIST(built-in self test) scheme which implement this algorithm in memory chip.ithm in memory chip.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.30 no.4A
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• pp.328-335
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• 2005

bIn this paper, built-in self-repair(BISR) is proposed for semiconductor memories. BISR is consisted of BIST(Buit-in self-test) and BIRU(Built-In Remapping Uint). BIST circuits are required not oがy to detect the presence of faults but also to specify their locations for repair. The memory rows are virtually divided into row blocks and reconfiguration is performed at the row block level instead of the traditional row level. According to the experimental result, we can verify algorithm for replacement of faulty cell.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.34C no.8
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• pp.8-21
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• 1997

In this paper, we consider resistive shorts on gate-source, gate-drain, and drain-source as well as opens in MOS FETs included in typical memory cell of VLSI SRAM and analyze behavior of memory by using PSPICE simulation. Using conventional fault models and this behavioral analysis, we propose linear testing algorithm of complexity O(N) which can be applied to both functional testing and IDDQ (quiescent power supply current) testing simultaneously to improve functionality and reliability of memory. Finally, we implement BIST (built-in self tsst) circuit and BICS(built-in current sensor), which are embedded on memory chip, to carry out functional testing efficiently and to detect various defects at high-speed respectively.

• The Journal of the Acoustical Society of Korea
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• v.20 no.1E
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• pp.14-19
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• 2001

We have proposed BIST method and circuit for embedded 16M SDRAM with logic. It can test the AC parameter of embedded 16M SDRAM using the BIST circuit capable of detecting the address of a fail cell installed in an Merged Memory with Logic(MML). It generates the information of repair for redundancy circuit. The function and AC parameter of the embedded memory can also be tested using the proposed BIST method. It is possible to test the embedded SDRAM without external test pin. The total gate of the BIST circuit is approximately 4,500 in the case of synthesizing by 0.25μm cell library and is verified by Verilog simulation. The test time of each one AC parameter is about 200ms using 2Y-March 14n algorithm.

• The Journal of Information Technology
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• v.3 no.3
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• pp.57-65
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• 2000

We have proposed BIST method and circuit for embedded 16M SDRAM with logic. It can test the AC parameter of embedded 16M SDRAM using the BIST circuit capable of detecting the address of a fail cell of a 16M SDRAM installed in an Merged Memory with Logic(MML) generating the information of repair for redundancy circuit. The function and AC parameter of the embedded memory can also be tested using the proposed BIST method. The total gate of the BIST circuit is approximately 4,500 in the case of synthesizing by $0.25\mu\textrm{m}$ cell library. and verify the result of Verilog simulation. The test time of each one AC parameter is about 200ms using 2Y-March 14N algorithm.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.6
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• pp.122-130
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• 2013

The demand and the supply are increasing sharply in accordance with the growth of the Memory Semiconductor Industry. The Flash Memory above all is being utilized substantially in the Industry of smart phone, the tablet PC and the System on Chip (SoC). The Flash Memory is divided into the NOR-type Flash Memory and the NAND-type Flash Memory. A lot of study such as the Built-In Self Test (BIST), the Built-In Self Repair (BISR) and the Built-In Redundancy Analysis (BIRA), etc. has been progressed in the NOR-type fash Memory, the study for the Built-In Self Test of the NAND-type Flash Memory has not been progressed. At present, the pattern test of the NAND-type Flash Memory is being carried out using the outside test equipment of high price. The NAND-type Flash Memory is being depended on the outside equipment as there is no Built-In Self Test since the erasure of block unit, the reading and writing of page unit are possible in the NAND-type Flash Memory. The Built-In Self Test equipped with 2 kinds of finite state machine based structure is proposed, so as to carry out the pattern test without the outside pattern test equipment from the NAND-type Flash Memory which carried out the test dependant on the outside pattern test equipment of high price.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.2
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• pp.69-81
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• 2008

The density of Memory has been increased by great challenge for memory technology, so elements of memory become smaller than before and the sensitivity to faults increases. As a result of these changes, memory testing becomes more complex. The number of storage elements is increased per chip, and the cost of test becomes more remarkable as the cost per transistor drops. Proposed design doesn't need to control from outside environment, because it integrates into memory. The proposed scheme supports the various memory testing algorithms. Consequently, the proposed one is more efficient in terms of test cost and test data to be applied. Moreover, we proposed a reallocation algorithm for faulty memory parts. It has an efficient reallocation scheme with row and column redundant memory. Previous reallocation information is obtained from faulty memory every each tests. However proposed scheme avoids to this problem. because onetime test result from reallocation information can save to flash memory. In this paper, a reallocation scheme has been increased efficiency because of using flash memory.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.12
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• pp.61-70
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• 2007

The density of Memory has been increased by great challenge for memory technology. Therefore, elements of memory become more smaller than before and the sensitivity to faults increases. As a result of these changes, memory testing becomes more complex. In addition, as the number of storage elements per chip increases, the test cost becomes more remarkable as the cost per transistor drops. Recent development in system-on-chip (SOC) technology makes it possible to incorporate large embedded memories into a chip. However, it also complicates the test process, since usually the embedded memories cannot be controlled from the external environment. Proposed design doesn't need controls from outside environment, because it integrates into memory. In general, there are a variety of memory modules in SOC, and it is not possible to test all of them with a single algorithm. Thus, the proposed scheme supports the various memory testing process. Moreover, it is able to At-Speed test in a memory module. consequently, the proposed is more efficient in terms of test cost and test data to be applied.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.807-810
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• 1998

This paper presents BIST (Built-in self-test) techniques for detection of path delay faults in digital circuits. In the proosed BIST schemes, the shift registers make possible to concurrently generate and compact the latched test data. Therefore the test time is reduced efficiently. By reordering the elements of th shifte register based on the information of the hamming distance of each memory elements in CUt, it is possible to increase the number of path delay faults detected robustly/non-robustly. Experimental results for ISCAS'89 benchmark circuits show the efficiency of the proposed BIST techniques.