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http://dx.doi.org/10.5573/ieek.2013.50.6.122

Pattern Testable NAND-type Flash Memory Built-In Self Test  

Hwang, Phil-Joo (Department of Computer, Soongsil University)
Kim, Tae-Hwan (Department of Computer, Soongsil University)
Kim, Jin-Wan (Department of Computer, Soongsil University)
Chang, Hoon (Department of Computer, Soongsil University)
Publication Information
Journal of the Institute of Electronics and Information Engineers / v.50, no.6, 2013 , pp. 122-130 More about this Journal
Abstract
The demand and the supply are increasing sharply in accordance with the growth of the Memory Semiconductor Industry. The Flash Memory above all is being utilized substantially in the Industry of smart phone, the tablet PC and the System on Chip (SoC). The Flash Memory is divided into the NOR-type Flash Memory and the NAND-type Flash Memory. A lot of study such as the Built-In Self Test (BIST), the Built-In Self Repair (BISR) and the Built-In Redundancy Analysis (BIRA), etc. has been progressed in the NOR-type fash Memory, the study for the Built-In Self Test of the NAND-type Flash Memory has not been progressed. At present, the pattern test of the NAND-type Flash Memory is being carried out using the outside test equipment of high price. The NAND-type Flash Memory is being depended on the outside equipment as there is no Built-In Self Test since the erasure of block unit, the reading and writing of page unit are possible in the NAND-type Flash Memory. The Built-In Self Test equipped with 2 kinds of finite state machine based structure is proposed, so as to carry out the pattern test without the outside pattern test equipment from the NAND-type Flash Memory which carried out the test dependant on the outside pattern test equipment of high price.
Keywords
Flash Memory Test; BIST(Built-In Self Test); Disturbance Fault; Pattern Test;
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